IRS2011STRPBF vs IR2011STRPBF 对比

详细并排对比 IRS2011STRPBF 出自 Infineon 和 IR2011STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 量产中

规格对比

参数 IRS2011STRPBF IR2011STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $0.71
功能 Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels High-Side and Low-Side (Independent)
输出数量 2 —
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.0 V CMOS or LSTTL
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V —
Negative Transient Tolerance Yes, dV/dt immune dV/dt immune
封装 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
工作温度 -40 C to +125 C -40 C to +125 C
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix) —
Suitable Drivers MOSFETs and IGBTs —
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Propagation Delay (typ.) — 80 ns
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
Lead-Free / RoHS — Lead-Free, RoHS Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价