IRS2011STRPBF vs IR2011STRPBF Comparação
Comparação detalhada lado a lado de IRS2011STRPBF por Infineon e IR2011STRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRS2011STRPBF | IR2011STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,55 | $0,71 |
| Função | Half-Bridge Gate Driver | — |
| Configuration | High-Side and Low-Side, Independent Channels | High-Side and Low-Side (Independent) |
| Número de saídas | 2 | — |
| Maximum Offset Voltage (High-Side) | 200 V | — |
| Output Current (Source / Sink) | 1 A typical / 1 A typical | — |
| Propagation Delay (ton/toff) | 60 ns typical | — |
| Delay Matching | 20 ns maximum | — |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL | 3.0 V CMOS or LSTTL |
| Bootstrap Supply | Integrated bootstrap diode, floating channel | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Negative Transient Tolerance | Yes, dV/dt immune | dV/dt immune |
| Encapsulamento | 8-SOIC (DSO-8) | 8-SOIC (3.90 mm body width) |
| Temperatura de operação | -40 C to +125 C | -40 C to +125 C |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant (PBF suffix) | — |
| Suitable Drivers | MOSFETs and IGBTs | — |
| Number of Drivers | — | 2 (Half-Bridge) |
| Peak Source Current | — | 1 A (typical) |
| Peak Sink Current | — | 1 A (typical) |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Supply Voltage (VBS) | — | 10 V to 20 V (operational to +200 V) |
| Propagation Delay (typ.) | — | 80 ns |
| Turn-On Rise Time (typ.) | — | 35 ns |
| Turn-Off Fall Time (typ.) | — | 20 ns |
| Offset Voltage Rating | — | 200 V |
| Lead-Free / RoHS | — | Lead-Free, RoHS Compliant |