K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
Référence : K9PDG08U5M ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.5 | $6,50 |
| 10 | $5.85 | $58,50 |
| 100 | $5.2 | $520,00 |
| 500 | $4.68 | $2 340,00 |
| 1 000 | $4.2 | $4 200,00 |
K9PDG08U5M Présentation
NAND flash is a type of non-volatile memory that stores data in memory cells arranged in series, enabling very high density and low cost per bit compared to NOR flash. Within the memory hierarchy, NAND flash sits in the solid-state storage class, bridging volatile DRAM and permanent system firmware. It is accessed over an asynchronous 8-bit multiplexed address/data bus with command, address latch enable (CLE/ALE) control, making it the dominant storage medium for embedded systems, SSDs, and memory cards.
Key characteristics of the K9PDG08U5M include its x8 multiplexed I/O interface, page-based program and block-based erase operation, and a 3.3V (2.7V to 3.6V) supply rail. The device uses the industry-standard NAND command set (00h-10h page program, 00h-30h page read, 60h-44h block erase per common Samsung conventions), simplifying controller design and software reuse across Samsung NAND generations.
Architecturally, the device organizes the 4Gbit array into pages and blocks with a spare area per page for ECC data. Because it is SLC (single-level cell), each cell stores one bit, giving higher endurance and faster access than MLC parts of the same family - a key advantage for industrial and code-storage designs. Ready/Busy (R/B) signaling with open-drain output supports polled or interrupt-driven operation.
Typical applications include solid-state drives, USB flash drives, memory cards, set-top boxes, industrial data loggers, and embedded boot code storage where reliability and endurance matter.
Design consideration: NAND flash requires error correction code (ECC) - implement Hamming or BCH ECC in the host controller and manage bad blocks per Samsung's bad-block management guidelines; the spare area must be reserved for ECC and bad-block markers.
This page synthesizes distributor sourcing data, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with pricing freshness signals as of 2026-09-04.
Alternatives de remplacement direct pour K9PDG08U5M — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K9PDG08U5M (même facteur de forme et même empreinte) — différant par Package, Interface, Memory Type, Cell Type, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K9MDG08U5M
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$35.5 / unité
Voir la fiche technique →K9F2808Q0B
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9XXG08U0M
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →K9XXG08UXM
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9F6408U0B
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$3.2 / unité
Voir la fiche technique →K9PDG08U5M Spécifications
| Type de mémoire | NAND Flash (SLC) |
| Density | 4 Gbit |
| Organisation de la mémoire | x8 (multiplexed I/O) |
| Boîtier | TSOP1-48 |
| Type de montage | Surface Mount |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | Yes (R/B, open-drain) |
| Write Protect Pin | Yes (/WP) |
Configuration des broches de K9PDG08U5M
| Broche 1 | NC — Not connected (per datasheet) |
| Broche 2 | NC — Not connected (per datasheet) |
| Broche 3 | NC — Not connected (per datasheet) |
| Broche 4 | NC — Not connected (per datasheet) |
| Broche 5 | NC — Not connected (per datasheet) |
| Broche 6 | NC — Not connected (per datasheet) |
| Broche 7 | NC — Not connected (per datasheet) |
| Broche 8 | NC — Not connected (per datasheet) |
| Broche 9 | NC — Not connected (per datasheet) |
| Broche 10 | NC — Not connected (per datasheet) |
| Broche 11 | NC — Not connected (per datasheet) |
| Broche 12 | NC — Not connected (per datasheet) |
| Broche 13 | R/B — Ready/Busy output (open-drain) |
| Broche 14 | /RE — Read enable |
| Broche 15 | /CE — Chip enable |
| Broche 16 | NC — Not connected (per datasheet) |
| Broche 17 | NC — Not connected (per datasheet) |
| Broche 18 | NC — Not connected (per datasheet) |
| Broche 19 | VSS — Ground |
| Broche 20 | NC — Not connected (per datasheet) |
| Broche 21 | NC — Not connected (per datasheet) |
| Broche 22 | NC — Not connected (per datasheet) |
| Broche 23 | NC — Not connected (per datasheet) |
| Broche 24 | NC — Not connected (per datasheet) |
| Broche 25 | NC — Not connected (per datasheet) |
| Broche 26 | NC — Not connected (per datasheet) |
| Broche 27 | NC — Not connected (per datasheet) |
| Broche 28 | NC — Not connected (per datasheet) |
| Broche 29 | NC — Not connected (per datasheet) |
| Broche 30 | NC — Not connected (per datasheet) |
| Broche 31 | NC — Not connected (per datasheet) |
| Broche 32 | NC — Not connected (per datasheet) |
| Broche 33 | /WE — Write enable |
| Broche 34 | ALE — Address latch enable |
| Broche 35 | CLE — Command latch enable |
| Broche 36 | /WP — Write protect (active low) |
| Broche 37 | VCC — Power supply |
| Broche 38 | NC — Not connected (per datasheet) |
| Broche 39 | I/O7 — Data input/output bit 7 |
| Broche 40 | I/O6 — Data input/output bit 6 |
| Broche 41 | I/O5 — Data input/output bit 5 |
| Broche 42 | I/O4 — Data input/output bit 4 |
| Broche 43 | I/O3 — Data input/output bit 3 |
| Broche 44 | I/O2 — Data input/output bit 2 |
| Broche 45 | I/O1 — Data input/output bit 1 |
| Broche 46 | I/O0 — Data input/output bit 0 / I/O0-7 LSB |
| Broche 47 | NC — Not connected (per datasheet) |
| Broche 48 | NC — Not connected (per datasheet) |
Applications typiques
K9PDG08U5M convient pour 6 applications: Solid-State Storage Modules, Industrial Data Loggers, Set-Top Boxes and Consumer Electronics, Embedded Boot Code Storage, USB Flash Drives and Memory Cards, Networking and Telecom Equipment.
Solid-State Storage Modules
The K9PDG08U5M's 4Gbit SLC array in a TSOP1-48 package is well suited to compact solid-state storage modules such as IDE/CF adapters and embedded storage boards. Its x8 multiplexed interface connects directly to common NAND controllers, and SLC operation delivers higher endurance and deterministic timing than MLC, important for module write-life guarantees. Designers typically parallel or cascade multiple devices behind a controller with BCH ECC and wear-leveling firmware; the 3.3V rail and standard K9 command set minimize board and firmware changes when scaling capacity across Samsung generations.
Recommandé
Industrial Data Loggers
Industrial data loggers benefit from the K9PDG08U5M's SLC endurance and 3.3V operation in harsh environments where repeated logging cycles wear out MLC media faster. The 48-pin TSOP1 footprint mounts on standard industrial PCBs, and the R/B output allows interrupt-driven logging on MCU platforms, reducing polling overhead. With host-side ECC, bad-block management, and wear leveling, the 512MByte array holds years of sensor data; the /WP pin protects stored logs during brownout or tamper conditions, a common requirement in utility and field-instrumentation designs.
Recommandé
Set-Top Boxes and Consumer Electronics
Set-top boxes and consumer media devices use the K9PDG08U5M to store firmware, channel databases, and application code. The standard K9 asynchronous NAND command set is supported by all major SoC boot-ROMs, allowing direct XIP-free boot from NAND, and the 3.3V I/O matches typical consumer board rails without level shifting. Because the device is SLC, boot-code integrity is higher than on MLC at low cost. Designers reserve spare area for ECC and keep a golden firmware copy, leveraging bad-block skipping in the boot loader for long product lifetimes.
Recommandé
Embedded Boot Code Storage
The K9PDG08U5M serves as boot and configuration storage in embedded processors whose boot ROM loads code from raw NAND. Its predictable SLC timing and standard 00h/30h read command sequence simplify first-stage loader implementation, and the factory bad-block markers let boot ROMs skip defective blocks deterministically. The 512MByte capacity comfortably holds bootloader, kernel, and file-system images. A pull-up on R/B and correct CLE/ALE timing per the Samsung datasheet AC tables are the key hardware requirements for reliable cold-boot behavior.
Recommandé
USB Flash Drives and Memory Cards
Removable media products such as USB flash drives and card modules historically used the K9PDG08U5M-class 4Gbit SLC NAND behind a UFI/SD controller. SLC construction gives faster sustained write speeds and longer card life than consumer MLC, valuable in ruggedized or professional media variants. The controller performs ECC, wear leveling, and bad-block remapping transparently. The TSOP1-48 footprint supports automated assembly in thin card form factors, and the 3.3V supply integrates directly with card power switches and level translators for dual-voltage card interfaces.
Recommandé
Networking and Telecom Equipment
Routers, switches, and telecom line cards use the K9PDG08U5M to store firmware images, configuration files, and event logs. SLC reliability reduces field-failure risk in always-on equipment where MLC retention under heat is marginal, and the 4Gbit density accommodates dual-firmware A/B update schemes for safe over-the-network upgrades. The standard K9 command set is supported by common networking SoCs, and 3.3V operation fits telecom board power budgets. Designers pair the device with a supervisor/reset IC and hold /WP asserted during power-up to protect the golden image.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K9PDG08U5M — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K9MDG08U5M | K9F2808Q0B | K9XXG08U0M | K9XXG08UXM | K9F6408U0B |
|---|---|---|---|---|---|---|
| Package | TSOP1-48 | TSOP1-48 - same | TSOP1-48 - same | TSOP1-48 - same | TSOP1-48 - same | TSOP1-48 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Organization | x8 | x8 | x8 | x8 | x8 | x8 |
| Cell Type | SLC | SLC | SLC | SLC | SLC | SLC |
| Supply Voltage | 3.3 V class | 3.3 V class | 3.3 V class | 3.3 V class | 3.3 V class | 3.3 V class |
| Interface | Asynchronous NAND, CLE/ALE | Asynchronous NAND, CLE/ALE | Asynchronous NAND, CLE/ALE | Asynchronous NAND, CLE/ALE (faster EDO timing) | Asynchronous NAND, CLE/ALE | Asynchronous NAND, CLE/ALE |
Principaux différenciateurs
- 4Gbit SLC density in the standard footprint (vs K9F2808Q0B)
- SLC endurance vs newer-generation parts (vs K9XXG08UXM)
- Honest trade-off: EOL sourcing risk (vs K9MDG08U5M)
Notes de conception
Use the standard JEDEC TSOP1-48 land pattern for the K9PDG08U5M and place 0.1uF ceramic decoupling capacitors within 3-5 mm of each VCC/VSS pair, plus 10uF bulk capacitance near the device. NAND flash draws short, high-current bursts during program and erase operations; insufficient decoupling manifests as intermittent program failures and ECC errors rather than hard faults. Because same-family drop-ins (K9MDG08U5M, K9XXG08U0M) share the footprint, layout reuse across densities is safe.
The R/B output is open-drain and requires a pull-up resistor (typically 10k to VCC). Keep CLE, ALE, /CE, /RE, /WE trace lengths matched and short; the asynchronous interface tolerates modest skew, but clocking /RE beyond datasheet tRC limits causes read-corruption at higher temperatures. Avoid routing I/O0-I/O7 adjacent to switching-regulator nodes to prevent glitch-induced latch errors during the command phase.
Do not assume bad blocks are blank: the factory marks initial bad blocks in the first page of each block, and host software must scan and skip them before any erase. Never erase a block containing a factory bad-block marker, and never rely on block 0 being defect-free without checking (Samsung guarantees valid block 0 on this generation, but firmware should still verify). Always enable ECC on both main and spare area, and assert /WP during power transitions to prevent spurious programs.
Informations de conformité
Compliance data was not present in the provided verified web data; consult the Samsung product page or datasheet for RoHS/REACH status of the specific orderable suffix (e.g., K9PDG08U5M-LCB0).
