MRF7S21150HSR3 vs MRF7S16150HSR3 Comparaison
Comparaison détaillée côte à côte de MRF7S21150HSR3 par NXP Semiconductors et MRF7S16150HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoleteComparaison des spécifications
| Paramètre | MRF7S21150HSR3 | MRF7S16150HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Type de transistor | N-Channel LDMOS RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Test Voltage | 28 V | — |
| Rated Drain Voltage (Vds max) | 65 V | — |
| Average Output Power | 44 W (W-CDMA) | — |
| Peak Output Power | 150 W | — |
| Power Gain | 17.5 dB (typical at 2.14 GHz) | 19.7 dB |
| Test Current | 1.35 A | — |
| Boîtier | NI-780S (NI-780 HS variant) | — |
| Configuration | Single, push-pull final stage | Single (SINGLE) |
| Type de montage | Flange / bolt-down with ceramic body | Surface Mount / bolt-down flange |
| Lead Configuration | High-source-leads (HS) variant | — |
| Operating Mode | Class AB / Doherty | — |
| Application | W-CDMA, LTE base station final-stage PA | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| JEDEC Qualification | JESD22 thermal/mechanical | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: moisture sensitivity level] |
| Technology | — | RF Power Field-Effect Transistor (HV7 process) |
| Drain-Source Voltage (VDS) Rated | — | 65 V minimum |
| Drain-Source Voltage (Test Condition) | — | 28 V typical operating |
| Continuous Drain Current | — | 1.5 A |
| Operating Frequency Range | — | 1.6 GHz to 1.66 GHz |
| Test Frequency | — | 1.6 GHz |
| Output Power (Pout) | — | 32 W |
| Boîtier / Format | — | NI-780S (ceramic, metal-sealed cofired, surface mount) |
| Case Connection | — | SOURCE (flange tied to source) |
| Channel Temperature (Tch max) | — | [DATA_NEEDED: maximum channel temperature] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Lead / Terminal Finish | — | [DATA_NEEDED: lead finish / plating] |