MRF7S21150HSR3 vs MRF7S16150HSR3 Comparação

Comparação detalhada lado a lado de MRF7S21150HSR3 por NXP Semiconductors e MRF7S16150HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF7S21150HSR3 MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP

MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP

MRF7S21150HSR3 Obsolete
NXP Semiconductors
MRF7S16150HSR3 MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP

MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP

MRF7S16150HSR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF7S21150HSR3 MRF7S16150HSR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Obsolete Ativo
Tipo de transistor N-Channel LDMOS RF Power MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Frequency Band 2110 MHz to 2170 MHz —
Test Voltage 28 V —
Rated Drain Voltage (Vds max) 65 V —
Average Output Power 44 W (W-CDMA) —
Peak Output Power 150 W —
Power Gain 17.5 dB (typical at 2.14 GHz) 19.7 dB
Test Current 1.35 A —
Encapsulamento NI-780S (NI-780 HS variant) —
Configuration Single, push-pull final stage Single (SINGLE)
Tipo de montagem Flange / bolt-down with ceramic body Surface Mount / bolt-down flange
Lead Configuration High-source-leads (HS) variant —
Operating Mode Class AB / Doherty —
Application W-CDMA, LTE base station final-stage PA —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
JEDEC Qualification JESD22 thermal/mechanical —
Nível MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: moisture sensitivity level]
Technology — RF Power Field-Effect Transistor (HV7 process)
Drain-Source Voltage (VDS) Rated — 65 V minimum
Drain-Source Voltage (Test Condition) — 28 V typical operating
Continuous Drain Current — 1.5 A
Operating Frequency Range — 1.6 GHz to 1.66 GHz
Test Frequency — 1.6 GHz
Output Power (Pout) — 32 W
Encapsulamento / Caixa — NI-780S (ceramic, metal-sealed cofired, surface mount)
Case Connection — SOURCE (flange tied to source)
Channel Temperature (Tch max) — [DATA_NEEDED: maximum channel temperature]
Storage Temperature — [DATA_NEEDED: storage temperature range]
Lead / Terminal Finish — [DATA_NEEDED: lead finish / plating]

Fichas técnicas e recursos

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