MRF7S21150HSR3 vs MRF7S16150HSR3 Comparación
Comparación detallada lado a lado de MRF7S21150HSR3 por NXP Semiconductors y MRF7S16150HSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoleteComparación de especificaciones
| Parámetro | MRF7S21150HSR3 | MRF7S16150HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Obsolete | Activo |
| Tipo de transistor | N-Channel LDMOS RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Test Voltage | 28 V | — |
| Rated Drain Voltage (Vds max) | 65 V | — |
| Average Output Power | 44 W (W-CDMA) | — |
| Peak Output Power | 150 W | — |
| Power Gain | 17.5 dB (typical at 2.14 GHz) | 19.7 dB |
| Test Current | 1.35 A | — |
| Encapsulado | NI-780S (NI-780 HS variant) | — |
| Configuration | Single, push-pull final stage | Single (SINGLE) |
| Tipo de montaje | Flange / bolt-down with ceramic body | Surface Mount / bolt-down flange |
| Lead Configuration | High-source-leads (HS) variant | — |
| Operating Mode | Class AB / Doherty | — |
| Application | W-CDMA, LTE base station final-stage PA | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| JEDEC Qualification | JESD22 thermal/mechanical | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: moisture sensitivity level] |
| Technology | — | RF Power Field-Effect Transistor (HV7 process) |
| Drain-Source Voltage (VDS) Rated | — | 65 V minimum |
| Drain-Source Voltage (Test Condition) | — | 28 V typical operating |
| Continuous Drain Current | — | 1.5 A |
| Operating Frequency Range | — | 1.6 GHz to 1.66 GHz |
| Test Frequency | — | 1.6 GHz |
| Output Power (Pout) | — | 32 W |
| Encapsulado / Carcasa | — | NI-780S (ceramic, metal-sealed cofired, surface mount) |
| Case Connection | — | SOURCE (flange tied to source) |
| Channel Temperature (Tch max) | — | [DATA_NEEDED: maximum channel temperature] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Lead / Terminal Finish | — | [DATA_NEEDED: lead finish / plating] |