MRF7S21150HSR3 vs MRF7S16150HSR3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF7S21150HSR3 sa pamamagitan ng NXP Semiconductors at MRF7S16150HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF7S21150HSR3 MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP

MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP

MRF7S21150HSR3 Obsolete
NXP Semiconductors
MRF7S16150HSR3 MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP

MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP

MRF7S16150HSR3 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF7S21150HSR3 MRF7S16150HSR3
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Obsolete Aktibo
Uri ng Transistor N-Channel LDMOS RF Power MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Frequency Band 2110 MHz to 2170 MHz —
Test Voltage 28 V —
Rated Drain Voltage (Vds max) 65 V —
Average Output Power 44 W (W-CDMA) —
Peak Output Power 150 W —
Power Gain 17.5 dB (typical at 2.14 GHz) 19.7 dB
Test Current 1.35 A —
Packhaging NI-780S (NI-780 HS variant) —
Configuration Single, push-pull final stage Single (SINGLE)
Uri ng Pagpapasok Flange / bolt-down with ceramic body Surface Mount / bolt-down flange
Lead Configuration High-source-leads (HS) variant —
Operating Mode Class AB / Doherty —
Application W-CDMA, LTE base station final-stage PA —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
JEDEC Qualification JESD22 thermal/mechanical —
Level ng MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: moisture sensitivity level]
Technology — RF Power Field-Effect Transistor (HV7 process)
Drain-Source Voltage (VDS) Rated — 65 V minimum
Drain-Source Voltage (Test Condition) — 28 V typical operating
Continuous Drain Current — 1.5 A
Operating Frequency Range — 1.6 GHz to 1.66 GHz
Test Frequency — 1.6 GHz
Output Power (Pout) — 32 W
Packhaging / Kaso — NI-780S (ceramic, metal-sealed cofired, surface mount)
Case Connection — SOURCE (flange tied to source)
Channel Temperature (Tch max) — [DATA_NEEDED: maximum channel temperature]
Storage Temperature — [DATA_NEEDED: storage temperature range]
Lead / Terminal Finish — [DATA_NEEDED: lead finish / plating]

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