UCC21550AQDWKRQ1 vs UCC21550BDWR Comparaison
Comparaison détaillée côte à côte de UCC21550AQDWKRQ1 par Texas Instruments et UCC21550BDWR par Texas Instruments. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Texas Instruments
UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI
UCC21550AQDWKRQ1 ✓ ActifTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ ActifComparaison des spécifications
| Paramètre | UCC21550AQDWKRQ1 | UCC21550BDWR |
|---|---|---|
| Marque | Texas Instruments | Texas Instruments |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,20 | $0,88 |
| Product Type | Reinforced isolated dual-channel gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Number of Channels | 2 | — |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Technology | Capacitive coupling | — |
| Configuration | Two low-side, two high-side, or half-bridge | — |
| Dead Time | Programmable via DT pin | — |
| Disable Function | Yes (DIS pin) | Yes |
| Input Threshold Logic | TTL and CMOS compatible | — |
| Target Switch Types | Power MOSFET, SiC, GaN, IGBT | — |
| Qualification | Automotive (Q1) | — |
| Boîtier | 14-SOIC (DWK) | 16-SOIC (DW) |
| Part Marking | 21550AQ | — |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | — |
| Supply Voltage Range (VDD) | [DATA_NEEDED: Supply Voltage Range] | — |
| Configuration de sortie | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Statut RoHS | — | [DATA_NEEDED: RoHS status] |