UCC21550AQDWKRQ1 vs UCC21550BDWR Сравнение
Подробное сравнение бок о бок UCC21550AQDWKRQ1 от Texas Instruments и UCC21550BDWR от Texas Instruments. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Texas Instruments
UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI
UCC21550AQDWKRQ1 ✓ АктивенTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ АктивенСравнение характеристик
| Параметр | UCC21550AQDWKRQ1 | UCC21550BDWR |
|---|---|---|
| Бренд | Texas Instruments | Texas Instruments |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,20 | $0,88 |
| Product Type | Reinforced isolated dual-channel gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Number of Channels | 2 | — |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Technology | Capacitive coupling | — |
| Configuration | Two low-side, two high-side, or half-bridge | — |
| Dead Time | Programmable via DT pin | — |
| Disable Function | Yes (DIS pin) | Yes |
| Input Threshold Logic | TTL and CMOS compatible | — |
| Target Switch Types | Power MOSFET, SiC, GaN, IGBT | — |
| Qualification | Automotive (Q1) | — |
| Корпус | 14-SOIC (DWK) | 16-SOIC (DW) |
| Part Marking | 21550AQ | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | [DATA_NEEDED: Operating Temperature Range] | — |
| Supply Voltage Range (VDD) | [DATA_NEEDED: Supply Voltage Range] | — |
| Выходная конфигурация | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Статус RoHS | — | [DATA_NEEDED: RoHS status] |