UCC21550AQDWKRQ1 vs UCC21550BDWR Vergleich
Detaillierter Direktvergleich von UCC21550AQDWKRQ1 von Texas Instruments und UCC21550BDWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Texas Instruments
UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI
UCC21550AQDWKRQ1 ✓ AktivTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AktivSpezifikationsvergleich
| Parameter | UCC21550AQDWKRQ1 | UCC21550BDWR |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,20 | $0,88 |
| Product Type | Reinforced isolated dual-channel gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Number of Channels | 2 | — |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Technology | Capacitive coupling | — |
| Configuration | Two low-side, two high-side, or half-bridge | — |
| Dead Time | Programmable via DT pin | — |
| Disable Function | Yes (DIS pin) | Yes |
| Input Threshold Logic | TTL and CMOS compatible | — |
| Target Switch Types | Power MOSFET, SiC, GaN, IGBT | — |
| Qualification | Automotive (Q1) | — |
| Gehäuse | 14-SOIC (DWK) | 16-SOIC (DW) |
| Part Marking | 21550AQ | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: Operating Temperature Range] | — |
| Supply Voltage Range (VDD) | [DATA_NEEDED: Supply Voltage Range] | — |
| Ausgangskonfiguration | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |