UCC21550AQDWKRQ1 vs UCC21550BDWR Comparison
Detailed side-by-side comparison of UCC21550AQDWKRQ1 by Texas Instruments and UCC21550BDWR by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Texas Instruments
UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI
UCC21550AQDWKRQ1 ✓ ActiveTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ ActiveSpecification Comparison
| Parameter | UCC21550AQDWKRQ1 | UCC21550BDWR |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $0.88 |
| Product Type | Reinforced isolated dual-channel gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Number of Channels | 2 | — |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Technology | Capacitive coupling | — |
| Configuration | Two low-side, two high-side, or half-bridge | — |
| Dead Time | Programmable via DT pin | — |
| Disable Function | Yes (DIS pin) | Yes |
| Input Threshold Logic | TTL and CMOS compatible | — |
| Target Switch Types | Power MOSFET, SiC, GaN, IGBT | — |
| Qualification | Automotive (Q1) | — |
| Package | 14-SOIC (DWK) | 16-SOIC (DW) |
| Part Marking | 21550AQ | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Operating Temperature Range] | — |
| Supply Voltage Range (VDD) | [DATA_NEEDED: Supply Voltage Range] | — |
| Output Configuration | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |