UCC21550AQDWKRQ1 vs UCC21550BDWR 비교

다음의 상세 나란히 비교: UCC21550AQDWKRQ1 제조: Texas Instruments 및 UCC21550BDWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Texas Instruments
UCC21550AQDWKRQ1 UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 ✓ 활성
Texas Instruments
UCC21550BDWR UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR ✓ 활성

사양 비교

파라미터 UCC21550AQDWKRQ1 UCC21550BDWR
브랜드 Texas Instruments Texas Instruments
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.20 $0.88
Product Type Reinforced isolated dual-channel gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Number of Channels 2 —
Isolation Voltage 5000 Vrms 5000 Vrms
Isolation Technology Capacitive coupling —
Configuration Two low-side, two high-side, or half-bridge —
Dead Time Programmable via DT pin —
Disable Function Yes (DIS pin) Yes
Input Threshold Logic TTL and CMOS compatible —
Target Switch Types Power MOSFET, SiC, GaN, IGBT —
Qualification Automotive (Q1) —
패키지 14-SOIC (DWK) 16-SOIC (DW)
Part Marking 21550AQ —
실장 유형 Surface Mount Surface Mount
동작 온도 범위 [DATA_NEEDED: Operating Temperature Range] —
Supply Voltage Range (VDD) [DATA_NEEDED: Supply Voltage Range] —
출력 구성 — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT
RoHS 상태 — [DATA_NEEDED: RoHS status]

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