UCC21550AQDWKRQ1 vs UCC21550BDWR 对比

详细并排对比 UCC21550AQDWKRQ1 出自 Texas Instruments 和 UCC21550BDWR 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Texas Instruments
UCC21550AQDWKRQ1 UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 ✓ 量产中
Texas Instruments
UCC21550BDWR UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR ✓ 量产中

规格对比

参数 UCC21550AQDWKRQ1 UCC21550BDWR
品牌 Texas Instruments Texas Instruments
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.20 $0.88
Product Type Reinforced isolated dual-channel gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Number of Channels 2 —
Isolation Voltage 5000 Vrms 5000 Vrms
Isolation Technology Capacitive coupling —
Configuration Two low-side, two high-side, or half-bridge —
Dead Time Programmable via DT pin —
Disable Function Yes (DIS pin) Yes
Input Threshold Logic TTL and CMOS compatible —
Target Switch Types Power MOSFET, SiC, GaN, IGBT —
Qualification Automotive (Q1) —
封装 14-SOIC (DWK) 16-SOIC (DW)
Part Marking 21550AQ —
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: Operating Temperature Range] —
Supply Voltage Range (VDD) [DATA_NEEDED: Supply Voltage Range] —
输出配置 — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT
RoHS 状态 — [DATA_NEEDED: RoHS status]

数据手册与资源

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