EDB8164B4PR-1D-F-D - 8Gbit LPDDR2 Mobile SDRAM 216-FBGA | Micron
Référence : EDB8164B4PR-1D-F-D ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.85 | $12,85 |
| 10 | $11.62 | $116,20 |
| 100 | $10.18 | $1 018,00 |
| 500 | $8.94 | $4 470,00 |
| 1 000 | $7.65 | $7 650,00 |
EDB8164B4PR-1D-F-D Présentation
LPDDR2 (Low-Power Double Data Rate 2) is a class of volatile DRAM that builds on the original LPDDR specification by adding higher bandwidth, lower voltage operation (1.2 V core/1.8 V I/O), and architectural refinements like on-die termination and a command/address architecture. Within the memory hierarchy, LPDDR2 sits between standard DDR2/DDR3 SDRAM and emerging LPDDR3/LPDDR4, optimized specifically for the power envelope and board-area constraints of mobile SoCs. As a dual-channel LPDDR2 device, the EDB8164B4PR pairs two 4 Gbit channels to deliver a wide 64-bit data interface per chip, enabling high throughput for application processors and multimedia subsystems.
Key differentiating features include a 533 MHz data rate (DDR2-1066 class effective throughput of 1066 MT/s), a compact 12x12 mm 216-WFBGA footprint, and compliance with JEDEC LPDDR2 standards. The device supports partial-array self-refresh (PASR) and deep power-down modes that significantly reduce standby current, which is critical for battery-powered systems. The wide VDD range (1.14 V-1.95 V) covers both core and I/O supply rails typically required by LPDDR2 designs.
Architecturally, the dual-die package (DDP) stacks two 4 Gbit LPDDR2 dies internally to achieve 8 Gbit density while preserving a single-chip footprint and command interface, simplifying PCB layout versus using two discrete 4 Gbit devices. This dual-channel configuration makes the part well matched to mobile APs and application processors that expect a 32-bit or 64-bit LPDDR2 data interface.
Typical applications include smartphones and tablets, portable media players, wearable electronics, automotive infotainment head units, mobile routers and IoT gateways, and industrial HMI panels. The -30C to +85C operating range extends suitability beyond consumer mobile into telematics, industrial controls, and outdoor equipment.
When designing with this part, observe JEDEC LPDDR2 PCB layout guidelines: route the 64-bit data/CA group as tightly matched lengths, provide adequate decoupling on VDD1/VDD2/VDDQ rails, and place the device close to the host SoC to minimize trace stubs. Designers should also verify that the host memory controller supports the LPDDR2 protocol and 8 Gbit density decoding before committing to layout.
This page synthesizes distributor pricing, drop-in same-brand alternatives, design considerations, and a packaging/ball-map reference not found on individual distributor listings, providing engineers with a single-page decision tool for LPDDR2 sourcing.
Alternatives de remplacement direct pour EDB8164B4PR-1D-F-D — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
EDB8164B4PR-1D-F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EDB8164B4PR-1D-F-R
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EDB8164B4PR-1D-F-R TR
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EDB8164B4PR-1D-F
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4PZ1644QM-AGC2 family
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
EDB8164B4PR-1D-F-D Valeurs maximales et caractéristiques électriques
| Type de mémoire | Volatile SDRAM - Mobile LPDDR2 |
| Taille de mémoire | 8 Gbit (128M x 64) |
| Architecture | Dual-channel (Dual-Die Package) |
| Clock Frequency | 533 MHz |
| Débit de données | 1066 MT/s (DDR2-1066) |
| Interface | Parallel |
| Tension d'alimentation de fonctionnement | 1.14 V to 1.95 V |
| Température de fonctionnement | -30C to +85C (TC) |
| Boîtier | 216-WFBGA (12x12 mm) |
| Type de montage | Surface Mount |
| Packaging | Tray |
| Technology | LPDDR2 SDRAM, CMOS |
| Self-Refresh | Partial-array self-refresh (PASR) supported |
| Compliance | JEDEC LPDDR2 |
| Statut RoHS | Compliant |
Guide de configuration des broches du EDB8164B4PR-1D-F-D 216-wfbga (12x12 mm)
Configuration des broches du EDB8164B4PR-1D-F-D (boîtier 216-wfbga (12x12 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour EDB8164B4PR-1D-F-D.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
EDB8164B4PR-1D-F-D convient pour 6 applications: Smartphone and Tablet Main Memory, Portable Media Players and Wearables, Automotive Infotainment Head Units, Mobile Routers and IoT Gateways, Industrial HMI Panels and Telematics, Set-Top Box and Smart TV SoCs.
Smartphone and Tablet Main Memory
The EDB8164B4PR-1D-F-D provides 8 Gbit (64-bit) LPDDR2-1066 main memory for mobile application processors. Its 533 MHz clock rate and dual-channel DDP architecture deliver up to 17 GB/s peak bandwidth, suitable for SoCs driving high-resolution displays and cameras. The 1.14 V-1.95 V wide supply range covers both core and I/O rails, while PASR and deep power-down modes minimize standby drain in handheld platforms.
Recommandé
Portable Media Players and Wearables
For battery-powered portable media players and wearable electronics, the EDB8164B4PR-1D-F-D offers LPDDR2 power efficiency at 8 Gbit density. Its compact 12x12 mm 216-WFBGA package fits tight wearable enclosures while providing 64-bit wide data access for audio/video decoders. Partial-array self-refresh dramatically reduces standby current when only a small memory region is active, extending battery life.
Recommandé
Automotive Infotainment Head Units
Automotive infotainment head units with multimedia displays benefit from the EDB8164B4PR-1D-F-D's -30C to +85C operating temperature range and 8 Gbit density. The 1066 MT/s data rate supports rear-seat entertainment and 3D navigation rendering. Designers should note that this part is not AEC-Q100 qualified, so it is suited to non-safety in-cabin infotainment rather than ADAS or cluster displays.
Recommandé
Mobile Routers and IoT Gateways
Mobile routers, Mi-Fi hotspots, and IoT gateways use the EDB8164B4PR-1D-F-D for buffering high-throughput cellular and Wi-Fi data streams. The dual-channel LPDDR2-1066 interface handles concurrent LTE/5G modem and Wi-Fi packet buffers without contention. Its 1.2 V core operation reduces thermal dissipation in sealed enclosures where airflow is limited.
Recommandé
Industrial HMI Panels and Telematics
Industrial human-machine interface panels and telematics terminals use the EDB8164B4PR-1D-F-D for its wide operating temperature range and 64-bit wide memory interface. The 8 Gbit capacity supports full Linux/Android firmware plus graphical assets. The 216-WFBGA 12x12 mm footprint suits compact panel designs where PCB real estate is constrained by display connectors and power stages.
Recommandé
Set-Top Box and Smart TV SoCs
Set-top boxes, smart TVs, and streaming appliances pair the EDB8164B4PR-1D-F-D with quad-core application processors to drive 4K UI rendering and video decode. The 64-bit wide LPDDR2-1066 interface sustains framebuffer bandwidth, while the 8 Gbit capacity accommodates OS, application, and DRM payload storage. Compact 216-WFBGA packaging enables slim consumer electronics enclosures.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour EDB8164B4PR-1D-F-D — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | EDB8164B4PR-1D-F | EDB8164B4PR-1D-F-R | EDB8164B4PR-1D-F-R TR | EDB8164B4PR-1D-F (Elpida) | K4PZ1644QM-AGC2 family |
|---|---|---|---|---|---|---|
| Package | 216-WFBGA (12x12 mm) | 216-WFBGA (12x12 mm) - same | 216-WFBGA (12x12 mm) - same | 216-WFBGA (12x12 mm) - same | 216-WFBGA (12x12 mm) - same | 216-WFBGA (12x12 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Elpida (Micron-affiliated) | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit (verify per SKU) |
| Organization | 128M x 64 | 128M x 64 | 128M x 64 | 128M x 64 | 128M x 64 | 128M x 64 (verify per SKU) |
| Clock Frequency | 533 MHz | 533 MHz | 533 MHz | 533 MHz | 533 MHz | 533 MHz (verify per SKU) |
| Supply Voltage | 1.14 V to 1.95 V | 1.14 V to 1.95 V | 1.14 V to 1.95 V | 1.14 V to 1.95 V | 1.14 V to 1.95 V | 1.14 V to 1.95 V (verify per SKU) |
| Operating Temperature | -30C to +85C | -30C to +85C | -30C to +85C | -30C to +85C | -30C to +85C | -30C to +85C (verify per SKU) |
| Packaging | Tray | Tray | Tape & Reel | Tape & Reel | Tray | Tray/T&R (verify) |
| Lifecycle Status | NRND (Legacy) | NRND (Legacy) | NRND (Legacy) | NRND (Legacy) | EOL (Elpida brand) | Verify per SKU |
Principaux différenciateurs
- Dual-channel DDP architecture in single-chip footprint (vs Discrete 4 Gbit LPDDR2 (e.g., 128M x 32))
- Wide supply voltage window covers both core and I/O rails (vs Single-rail LPDDR2 (1.2 V only))
- Partial-array self-refresh and deep power-down support (vs Standard DDR2 SDRAM)
Notes de conception
LPDDR2 routing requires tight length matching on the 64-bit DQ group and the command/address (CA) bus. Per JEDEC LPDDR2 guidelines, route DQ to within +/- 25 mil of the longest matched trace. Keep the device within 100 mil of the host SoC BGA to minimize stubs. Use a 4-layer PCB with continuous ground reference planes under the BGA to control impedance (~50 ohm single-ended, ~100 ohm differential for CK/CK#).
Decouple the EDB8164B4PR-1D-F-D with at least four 0.1 uF X7R ceramic capacitors placed within 50 mils of the WFBGA ball-side VDD1, VDD2, and VDDQ balls. Add bulk 10 uF ceramic + 22 uF tantalum on each rail. LPDDR2-1066 transients can pull 100+ mA spikes; insufficient decoupling causes VDDQ droop that triggers training failures and CRC errors.
The 216-WFBGA 12x12 mm package has limited heat dissipation surface area. Estimated: at full 1066 MT/s read/write workload, junction temperature rise is approximately 5-10C above ambient on a 4-layer PCB with continuous ground pour. For enclosed applications (set-top box, sealed router), ensure ambient stays below 75C to maintain the 85C TC max rating with margin.
Do not substitute LPDDR2 with LPDDR3 or LPDDR4 parts without verifying host controller compatibility - CA architecture, training sequences, and VDDQ levels differ across DRAM generations. Also, do not assume EDB8164B4PR-1D-F-D is AEC-Q100 qualified; for safety-critical automotive use, request an AEC-Q100 LPDDR variant from Micron. Always validate ball-out revision against the host SoC reference design before tape-out.
Informations de conformité
RoHS compliant per JLCPCB listing. Not AEC-Q100 qualified - not recommended for safety-critical automotive applications. Verify halogen-free status with Micron directly.
