EDB8164B4PR-1D-F-D - 8Gbit LPDDR2 Mobile SDRAM 216-FBGA | Micron
料号： EDB8164B4PR-1D-F-D ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.85 | $12.85 |
| 10 | $11.62 | $116.20 |
| 100 | $10.18 | $1,018.00 |
| 500 | $8.94 | $4,470.00 |
| 1,000 | $7.65 | $7,650.00 |
EDB8164B4PR-1D-F-D 概述
LPDDR2 (Low-Power Double Data Rate 2) is a class of volatile DRAM that builds on the original LPDDR specification by adding higher bandwidth, lower voltage operation (1.2 V core/1.8 V I/O), and architectural refinements like on-die termination and a command/address architecture. Within the memory hierarchy, LPDDR2 sits between standard DDR2/DDR3 SDRAM and emerging LPDDR3/LPDDR4, optimized specifically for the power envelope and board-area constraints of mobile SoCs. As a dual-channel LPDDR2 device, the EDB8164B4PR pairs two 4 Gbit channels to deliver a wide 64-bit data interface per chip, enabling high throughput for application processors and multimedia subsystems.
Key differentiating features include a 533 MHz data rate (DDR2-1066 class effective throughput of 1066 MT/s), a compact 12x12 mm 216-WFBGA footprint, and compliance with JEDEC LPDDR2 standards. The device supports partial-array self-refresh (PASR) and deep power-down modes that significantly reduce standby current, which is critical for battery-powered systems. The wide VDD range (1.14 V-1.95 V) covers both core and I/O supply rails typically required by LPDDR2 designs.
Architecturally, the dual-die package (DDP) stacks two 4 Gbit LPDDR2 dies internally to achieve 8 Gbit density while preserving a single-chip footprint and command interface, simplifying PCB layout versus using two discrete 4 Gbit devices. This dual-channel configuration makes the part well matched to mobile APs and application processors that expect a 32-bit or 64-bit LPDDR2 data interface.
Typical applications include smartphones and tablets, portable media players, wearable electronics, automotive infotainment head units, mobile routers and IoT gateways, and industrial HMI panels. The -30C to +85C operating range extends suitability beyond consumer mobile into telematics, industrial controls, and outdoor equipment.
When designing with this part, observe JEDEC LPDDR2 PCB layout guidelines: route the 64-bit data/CA group as tightly matched lengths, provide adequate decoupling on VDD1/VDD2/VDDQ rails, and place the device close to the host SoC to minimize trace stubs. Designers should also verify that the host memory controller supports the LPDDR2 protocol and 8 Gbit density decoding before committing to layout.
This page synthesizes distributor pricing, drop-in same-brand alternatives, design considerations, and a packaging/ball-map reference not found on individual distributor listings, providing engineers with a single-page decision tool for LPDDR2 sourcing.
直接替换替代料： EDB8164B4PR-1D-F-D ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
EDB8164B4PR-1D-F
✅ 直接替换📋 参考替代料（不在目录中）
EDB8164B4PR-1D-F-R
✅ 直接替换📋 参考替代料（不在目录中）
EDB8164B4PR-1D-F-R TR
✅ 直接替换📋 参考替代料（不在目录中）
EDB8164B4PR-1D-F
✅ 直接替换📋 参考替代料（不在目录中）
K4PZ1644QM-AGC2 family
✅ 直接替换📋 参考替代料（不在目录中）
EDB8164B4PR-1D-F-D 最大额定值与电气特性
| 存储器类型 | Volatile SDRAM - Mobile LPDDR2 |
| 存储容量 | 8 Gbit (128M x 64) |
| Architecture | Dual-channel (Dual-Die Package) |
| Clock Frequency | 533 MHz |
| 数据速率 | 1066 MT/s (DDR2-1066) |
| 接口 | Parallel |
| 工作电源电压 | 1.14 V to 1.95 V |
| 工作温度 | -30C to +85C (TC) |
| 封装 | 216-WFBGA (12x12 mm) |
| 安装类型 | Surface Mount |
| Packaging | Tray |
| Technology | LPDDR2 SDRAM, CMOS |
| Self-Refresh | Partial-array self-refresh (PASR) supported |
| Compliance | JEDEC LPDDR2 |
| RoHS 状态 | Compliant |
EDB8164B4PR-1D-F-D 216-wfbga (12x12 mm) 引脚配置指南
EDB8164B4PR-1D-F-D（216-wfbga (12x12 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： EDB8164B4PR-1D-F-D.
请参阅 数据手册 以查看完整引脚配置。
典型应用
EDB8164B4PR-1D-F-D 适用于 6 应用s: Smartphone and Tablet Main Memory, Portable Media Players and Wearables, Automotive Infotainment Head Units, Mobile Routers and IoT Gateways, Industrial HMI Panels and Telematics, Set-Top Box and Smart TV SoCs.
Smartphone and Tablet Main Memory
The EDB8164B4PR-1D-F-D provides 8 Gbit (64-bit) LPDDR2-1066 main memory for mobile application processors. Its 533 MHz clock rate and dual-channel DDP architecture deliver up to 17 GB/s peak bandwidth, suitable for SoCs driving high-resolution displays and cameras. The 1.14 V-1.95 V wide supply range covers both core and I/O rails, while PASR and deep power-down modes minimize standby drain in handheld platforms.
推荐
Portable Media Players and Wearables
For battery-powered portable media players and wearable electronics, the EDB8164B4PR-1D-F-D offers LPDDR2 power efficiency at 8 Gbit density. Its compact 12x12 mm 216-WFBGA package fits tight wearable enclosures while providing 64-bit wide data access for audio/video decoders. Partial-array self-refresh dramatically reduces standby current when only a small memory region is active, extending battery life.
推荐
Automotive Infotainment Head Units
Automotive infotainment head units with multimedia displays benefit from the EDB8164B4PR-1D-F-D's -30C to +85C operating temperature range and 8 Gbit density. The 1066 MT/s data rate supports rear-seat entertainment and 3D navigation rendering. Designers should note that this part is not AEC-Q100 qualified, so it is suited to non-safety in-cabin infotainment rather than ADAS or cluster displays.
推荐
Mobile Routers and IoT Gateways
Mobile routers, Mi-Fi hotspots, and IoT gateways use the EDB8164B4PR-1D-F-D for buffering high-throughput cellular and Wi-Fi data streams. The dual-channel LPDDR2-1066 interface handles concurrent LTE/5G modem and Wi-Fi packet buffers without contention. Its 1.2 V core operation reduces thermal dissipation in sealed enclosures where airflow is limited.
推荐
Industrial HMI Panels and Telematics
Industrial human-machine interface panels and telematics terminals use the EDB8164B4PR-1D-F-D for its wide operating temperature range and 64-bit wide memory interface. The 8 Gbit capacity supports full Linux/Android firmware plus graphical assets. The 216-WFBGA 12x12 mm footprint suits compact panel designs where PCB real estate is constrained by display connectors and power stages.
推荐
Set-Top Box and Smart TV SoCs
Set-top boxes, smart TVs, and streaming appliances pair the EDB8164B4PR-1D-F-D with quad-core application processors to drive 4K UI rendering and video decode. The 64-bit wide LPDDR2-1066 interface sustains framebuffer bandwidth, while the 8 Gbit capacity accommodates OS, application, and DRM payload storage. Compact 216-WFBGA packaging enables slim consumer electronics enclosures.
推荐
推荐产品汇总
工程参考数据： EDB8164B4PR-1D-F-D ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | EDB8164B4PR-1D-F | EDB8164B4PR-1D-F-R | EDB8164B4PR-1D-F-R TR | EDB8164B4PR-1D-F (Elpida) | K4PZ1644QM-AGC2 family |
|---|---|---|---|---|---|---|
| Package | 216-WFBGA (12x12 mm) | 216-WFBGA (12x12 mm) - same | 216-WFBGA (12x12 mm) - same | 216-WFBGA (12x12 mm) - same | 216-WFBGA (12x12 mm) - same | 216-WFBGA (12x12 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Elpida (Micron-affiliated) | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit (verify per SKU) |
| Organization | 128M x 64 | 128M x 64 | 128M x 64 | 128M x 64 | 128M x 64 | 128M x 64 (verify per SKU) |
| Clock Frequency | 533 MHz | 533 MHz | 533 MHz | 533 MHz | 533 MHz | 533 MHz (verify per SKU) |
| Supply Voltage | 1.14 V to 1.95 V | 1.14 V to 1.95 V | 1.14 V to 1.95 V | 1.14 V to 1.95 V | 1.14 V to 1.95 V | 1.14 V to 1.95 V (verify per SKU) |
| Operating Temperature | -30C to +85C | -30C to +85C | -30C to +85C | -30C to +85C | -30C to +85C | -30C to +85C (verify per SKU) |
| Packaging | Tray | Tray | Tape & Reel | Tape & Reel | Tray | Tray/T&R (verify) |
| Lifecycle Status | NRND (Legacy) | NRND (Legacy) | NRND (Legacy) | NRND (Legacy) | EOL (Elpida brand) | Verify per SKU |
关键差异点
- Dual-channel DDP architecture in single-chip footprint （对比 Discrete 4 Gbit LPDDR2 (e.g., 128M x 32))
- Wide supply voltage window covers both core and I/O rails （对比 Single-rail LPDDR2 (1.2 V only))
- Partial-array self-refresh and deep power-down support （对比 Standard DDR2 SDRAM)
设计说明
LPDDR2 routing requires tight length matching on the 64-bit DQ group and the command/address (CA) bus. Per JEDEC LPDDR2 guidelines, route DQ to within +/- 25 mil of the longest matched trace. Keep the device within 100 mil of the host SoC BGA to minimize stubs. Use a 4-layer PCB with continuous ground reference planes under the BGA to control impedance (~50 ohm single-ended, ~100 ohm differential for CK/CK#).
Decouple the EDB8164B4PR-1D-F-D with at least four 0.1 uF X7R ceramic capacitors placed within 50 mils of the WFBGA ball-side VDD1, VDD2, and VDDQ balls. Add bulk 10 uF ceramic + 22 uF tantalum on each rail. LPDDR2-1066 transients can pull 100+ mA spikes; insufficient decoupling causes VDDQ droop that triggers training failures and CRC errors.
The 216-WFBGA 12x12 mm package has limited heat dissipation surface area. Estimated: at full 1066 MT/s read/write workload, junction temperature rise is approximately 5-10C above ambient on a 4-layer PCB with continuous ground pour. For enclosed applications (set-top box, sealed router), ensure ambient stays below 75C to maintain the 85C TC max rating with margin.
Do not substitute LPDDR2 with LPDDR3 or LPDDR4 parts without verifying host controller compatibility - CA architecture, training sequences, and VDDQ levels differ across DRAM generations. Also, do not assume EDB8164B4PR-1D-F-D is AEC-Q100 qualified; for safety-critical automotive use, request an AEC-Q100 LPDDR variant from Micron. Always validate ball-out revision against the host SoC reference design before tape-out.
合规信息
RoHS compliant per JLCPCB listing. Not AEC-Q100 qualified - not recommended for safety-critical automotive applications. Verify halogen-free status with Micron directly.
