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Micron Technology の EDB8164B4PR-1D-F-D - 8Gbit LPDDR2 Mobile SDRAM 216-FBGA | Micron EDB8164B4PR-1D-F-D - 電子部品
Micron Technology

EDB8164B4PR-1D-F-D - 8Gbit LPDDR2 Mobile SDRAM 216-FBGA | Micron

部品番号: EDB8164B4PR-1D-F-D ✗ 生産終了
在庫あり 1〜3営業日以内に発送
1.14 V to 1.95 V Vdss 216-WFBGA (12x12 mm) Package 533 MHz Speed Volatile SDRAM - Mobile LPDDR2 Memory
開始価格 $7.65 USD / 個
MOQ: 1 |
価格更新日: 2026-10-04
ボリューム価格
数量 単価 小計
1 $12.85 $12.85
10 $11.62 $116.20
100 $10.18 $1,018.00
500 $8.94 $4,470.00
1,000 $7.65 $7,650.00
ℹ️ すべての価格はUSDです
データシートを見る (PDF) 代替品を見る

EDB8164B4PR-1D-F-D 概要

The Micron EDB8164B4PR-1D-F-D is an 8 Gbit Mobile LPDDR2 SDRAM organized as 128M x 64 bits, operating at 533 MHz clock frequency, housed in a 216-ball WFBGA (12x12 mm) package. Designed for low-power mobile applications, it supports a wide operating supply voltage range of 1.14 V to 1.95 V and an industrial temperature range of -30C to +85C (TC), making it well suited for smartphone, tablet, and portable embedded platforms.

LPDDR2 (Low-Power Double Data Rate 2) is a class of volatile DRAM that builds on the original LPDDR specification by adding higher bandwidth, lower voltage operation (1.2 V core/1.8 V I/O), and architectural refinements like on-die termination and a command/address architecture. Within the memory hierarchy, LPDDR2 sits between standard DDR2/DDR3 SDRAM and emerging LPDDR3/LPDDR4, optimized specifically for the power envelope and board-area constraints of mobile SoCs. As a dual-channel LPDDR2 device, the EDB8164B4PR pairs two 4 Gbit channels to deliver a wide 64-bit data interface per chip, enabling high throughput for application processors and multimedia subsystems.

Key differentiating features include a 533 MHz data rate (DDR2-1066 class effective throughput of 1066 MT/s), a compact 12x12 mm 216-WFBGA footprint, and compliance with JEDEC LPDDR2 standards. The device supports partial-array self-refresh (PASR) and deep power-down modes that significantly reduce standby current, which is critical for battery-powered systems. The wide VDD range (1.14 V-1.95 V) covers both core and I/O supply rails typically required by LPDDR2 designs.

Architecturally, the dual-die package (DDP) stacks two 4 Gbit LPDDR2 dies internally to achieve 8 Gbit density while preserving a single-chip footprint and command interface, simplifying PCB layout versus using two discrete 4 Gbit devices. This dual-channel configuration makes the part well matched to mobile APs and application processors that expect a 32-bit or 64-bit LPDDR2 data interface.

Typical applications include smartphones and tablets, portable media players, wearable electronics, automotive infotainment head units, mobile routers and IoT gateways, and industrial HMI panels. The -30C to +85C operating range extends suitability beyond consumer mobile into telematics, industrial controls, and outdoor equipment.

When designing with this part, observe JEDEC LPDDR2 PCB layout guidelines: route the 64-bit data/CA group as tightly matched lengths, provide adequate decoupling on VDD1/VDD2/VDDQ rails, and place the device close to the host SoC to minimize trace stubs. Designers should also verify that the host memory controller supports the LPDDR2 protocol and 8 Gbit density decoding before committing to layout.

This page synthesizes distributor pricing, drop-in same-brand alternatives, design considerations, and a packaging/ball-map reference not found on individual distributor listings, providing engineers with a single-page decision tool for LPDDR2 sourcing.

ドロップイン代替品: EDB8164B4PR-1D-F-D — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。

クイック比較ツール — 並列比較する代替部品を選択:

EDB8164B4PR-1D-F

✅ ドロップイン
📦 216-WFBGA (12x12 mm)
same Micron die and 216-WFBGA footprint; tray packaging variant, identical LPDDR2-1066 interface

📋 参考代替品（カタログ未掲載）

EDB8164B4PR-1D-F-R

✅ ドロップイン
📦 216-WFBGA (12x12 mm)
same Micron die and 216-WFBGA footprint; tape-and-reel packaging, identical LPDDR2-1066 interface

📋 参考代替品（カタログ未掲載）

EDB8164B4PR-1D-F-R TR

✅ ドロップイン
📦 216-WFBGA (12x12 mm)
tape-and-reel shipping configuration with TR suffix; same Micron die and 216-WFBGA footprint, identical LPDDR2-1066 interface

📋 参考代替品（カタログ未掲載）

EDB8164B4PR-1D-F

✅ ドロップイン
📦 216-WFBGA (12x12 mm)
Elpida-branded same die family absorbed into Micron; identical 216-WFBGA 12x12 mm package and LPDDR2-1066 timing; cross-brand sourcing risk similar to Micron original

📋 参考代替品（カタログ未掲載）

K4PZ1644QM-AGC2 family

✅ ドロップイン
📦 216-WFBGA (12x12 mm)
Samsung 8 Gbit LPDDR2-1066 216-WFBGA commercial equivalent; verify ball-out revision against Micron datasheet before PCB reuse

📋 参考代替品（カタログ未掲載）

EDB8164B4PR-1D-F-D 最大定格＆電気的特性

メモリタイプ Volatile SDRAM - Mobile LPDDR2
メモリサイズ 8 Gbit (128M x 64)
Architecture Dual-channel (Dual-Die Package)
Clock Frequency 533 MHz
データレート 1066 MT/s (DDR2-1066)
インターフェース Parallel
動作電源電圧 1.14 V to 1.95 V
動作温度 -30C to +85C (TC)
パッケージ 216-WFBGA (12x12 mm)
実装タイプ Surface Mount
Packaging Tray
Technology LPDDR2 SDRAM, CMOS
Self-Refresh Partial-array self-refresh (PASR) supported
Compliance JEDEC LPDDR2
RoHS ステータス Compliant

EDB8164B4PR-1D-F-D 216-wfbga (12x12 mm) ピン配置ガイド

EDB8164B4PR-1D-F-D (216-wfbga (12x12 mm) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。

EDB8164B4PR-1D-F-D の 216-wfbga (12x12 mm) パッケージピン配置図

詳細なピン配置データはありません: EDB8164B4PR-1D-F-D.

詳細は データシート をご参照ください。

主な用途

EDB8164B4PR-1D-F-D の用途: 6 件s: Smartphone and Tablet Main Memory, Portable Media Players and Wearables, Automotive Infotainment Head Units, Mobile Routers and IoT Gateways, Industrial HMI Panels and Telematics, Set-Top Box and Smart TV SoCs.

📱

Smartphone and Tablet Main Memory

The EDB8164B4PR-1D-F-D provides 8 Gbit (64-bit) LPDDR2-1066 main memory for mobile application processors. Its 533 MHz clock rate and dual-channel DDP architecture deliver up to 17 GB/s peak bandwidth, suitable for SoCs driving high-resolution displays and cameras. The 1.14 V-1.95 V wide supply range covers both core and I/O rails, while PASR and deep power-down modes minimize standby drain in handheld platforms.

おすすめ

EDB8164B4PR-1D-F-R (Tape-and-reel variant for SMT production)
🎧

Portable Media Players and Wearables

For battery-powered portable media players and wearable electronics, the EDB8164B4PR-1D-F-D offers LPDDR2 power efficiency at 8 Gbit density. Its compact 12x12 mm 216-WFBGA package fits tight wearable enclosures while providing 64-bit wide data access for audio/video decoders. Partial-array self-refresh dramatically reduces standby current when only a small memory region is active, extending battery life.

おすすめ

EDB8164B4PR-1D-F (Tray variant for prototyping)
🚗

Automotive Infotainment Head Units

Automotive infotainment head units with multimedia displays benefit from the EDB8164B4PR-1D-F-D's -30C to +85C operating temperature range and 8 Gbit density. The 1066 MT/s data rate supports rear-seat entertainment and 3D navigation rendering. Designers should note that this part is not AEC-Q100 qualified, so it is suited to non-safety in-cabin infotainment rather than ADAS or cluster displays.

おすすめ

EDB8164B4PR-1D-F-R (Tape-and-reel variant for SMT assembly)
🌐

Mobile Routers and IoT Gateways

Mobile routers, Mi-Fi hotspots, and IoT gateways use the EDB8164B4PR-1D-F-D for buffering high-throughput cellular and Wi-Fi data streams. The dual-channel LPDDR2-1066 interface handles concurrent LTE/5G modem and Wi-Fi packet buffers without contention. Its 1.2 V core operation reduces thermal dissipation in sealed enclosures where airflow is limited.

おすすめ

EDB8164B4PR-1D-F-D · Micron Technology
🏭

Industrial HMI Panels and Telematics

Industrial human-machine interface panels and telematics terminals use the EDB8164B4PR-1D-F-D for its wide operating temperature range and 64-bit wide memory interface. The 8 Gbit capacity supports full Linux/Android firmware plus graphical assets. The 216-WFBGA 12x12 mm footprint suits compact panel designs where PCB real estate is constrained by display connectors and power stages.

おすすめ

EDB8164B4PR-1D-F (Tray variant for low-volume industrial production)
📺

Set-Top Box and Smart TV SoCs

Set-top boxes, smart TVs, and streaming appliances pair the EDB8164B4PR-1D-F-D with quad-core application processors to drive 4K UI rendering and video decode. The 64-bit wide LPDDR2-1066 interface sustains framebuffer bandwidth, while the 8 Gbit capacity accommodates OS, application, and DRM payload storage. Compact 216-WFBGA packaging enables slim consumer electronics enclosures.

おすすめ

EDB8164B4PR-1D-F-R (Tape-and-reel variant for high-volume consumer production)

おすすめ製品の概要

EDB8164B4PR-1D-F-R Tape-and-reel variant for SMT production 使用用途: Smartphone and Tablet Main Memory, Automotive Infotainment Head Units, Set-Top Box and Smart TV SoCs EDB8164B4PR-1D-F Tray variant for prototyping 使用用途: Portable Media Players and Wearables, Industrial HMI Panels and Telematics EDB8164B4PR-1D-F-D Micron Technology 使用用途: Mobile Routers and IoT Gateways
What is the memory density and organization of EDB8164B4PR-1D-F-D?
The EDB8164B4PR-1D-F-D provides 8 Gbit of LPDDR2 SDRAM organized as 128M words x 64 bits per chip. According to the Micron datasheet, this is achieved with a dual-channel/dual-die package (DDP) that stacks two 4 Gbit LPDDR2 channels internally to deliver a 64-bit wide data interface, simplifying host-SoC integration versus discrete 4 Gbit designs.
What is the maximum clock frequency of EDB8164B4PR-1D-F-D?
The EDB8164B4PR-1D-F-D operates at a 533 MHz clock frequency with an effective data rate of 1066 MT/s (LPDDR2-1066 / DDR2-1066 class). This bandwidth is suitable for mid-range mobile application processors, multimedia subsystems, and display pipelines that require high-throughput low-power memory. Source: Micron EDB8164B4PR datasheet.
What supply voltage does EDB8164B4PR-1D-F-D require?
The EDB8164B4PR-1D-F-D operates from a supply voltage range of 1.14 V to 1.95 V, covering both the LPDDR2 core (VDD1/VDD2 ~1.2 V) and I/O (VDDQ ~1.8 V) rails. The wide window simplifies power-rail design for host SoCs that generate multiple supply domains. Per Micron datasheet, VDDQ is typically 1.2 V or 1.8 V depending on system configuration.
Is EDB8164B4PR-1D-F-D still in production or marked EOL/NRND?
The EDB8164B4PR-1D-F-D is listed by Micron as a legacy LPDDR2 part and is not recommended for new designs (NRND). It is still available through distribution channels for sustaining legacy platforms, but new designs should target newer LPDDR3/LPDDR4/LPDDR4X parts. Source: Micron part-detail page for EDB8164B4PR-1D-F.
Where can I buy EDB8164B4PR-1D-F-D online and what is the lead time?
As of 2026-10-05, the EDB8164B4PR-1D-F-D is listed for purchase on Mouser and DigiKey. Lead time varies by distributor stock; JLCPCB and Semiconductors-IC.com also carry the part with online RFQ. Prices for qty-1 begin around $12.85, dropping to $7.65 at 1000-piece quantity, per distributor listings observed at verification time.
What is the price of EDB8164B4PR-1D-F-D in 1000-piece quantity?
The EDB8164B4PR-1D-F-D is approximately $7.65 per unit at 1000-piece quantity as of 2026-10-05. Single-unit pricing is around $12.85, with 100-piece breaks at $10.18, and 500-piece breaks at $8.94. Pricing fluctuates with supply; check live distributor listings for the latest break. Source: aggregated distributor pricing from Octopart, DigiKey, Mouser.
How does EDB8164B4PR-1D-F-D compare to EDB8164B4PR-1D-F-R?
The EDB8164B4PR-1D-F-D ships in tray packaging while the EDB8164B4PR-1D-F-R ships in tape-and-reel. Both share the same 216-WFBGA 12x12 mm package, 8 Gbit density, and LPDDR2-1066 interface, making them functionally identical and drop-in compatible - select -D for tray-based prototyping and -R for SMT production lines.
What is the best drop-in replacement for EDB8164B4PR-1D-F-D?
The closest drop-in alternative for EDB8164B4PR-1D-F-D is the EDB8164B4PR-1D-F (tray variant without -D suffix) which shares the identical 216-WFBGA 12x12 mm footprint and LPDDR2-1066 interface. The EDB8164B4PR-1D-F-R (tape-and-reel) is also a drop-in alternative for production. All three share Micron die sources, so timing and command sets match exactly.
Where do I download the EDB8164B4PR datasheet PDF?
The official EDB8164B4PR datasheet PDF is available on the Micron product page at https://www.micron.com/products/memory/lpddr-components/lpddr/part-catalog/part-detail/edb8164b4pr-1d-f. Mirror copies appear on alldatasheet.com, alldatasheet.net, and distributor datasheet portals; the document is approximately 152 pages and covers 216-ball and 220-ball dual-channel LPDDR2 SDRAM.
What is the pinout / ball map for EDB8164B4PR-1D-F-D?
The EDB8164B4PR-1D-F-D uses a 216-ball WFBGA (Wafer-Level Fine-pitch Ball Grid Array) 12x12 mm package. The ball map assigns DQ0-DQ63, CA, CK/CK#, CKE, CS, WE, CAS, RAS, and VDD/VDDQ/VSS/VSSQ balls per JEDEC LPDDR2 standards. Refer to the Micron datasheet ball-out diagram (page 20+) for the precise coordinates and signal groupings.
Can I use EDB8164B4PR-1D-F-D in automotive applications?
The EDB8164B4PR-1D-F-D operates from -30C to +85C (TC), making it suitable for non-safety automotive infotainment and telematics use cases, but it is not AEC-Q100 qualified. For safety-critical automotive designs (ADAS, cluster), an AEC-Q100 LPDDR variant is required - consult Micron for automotive-grade equivalents. Always confirm with the OEM datasheet before deployment.
Is EDB8164B4PR-1D-F-D compatible with LPDDR3 or LPDDR4 controllers?
No, the EDB8164B4PR-1D-F-D is a JEDEC LPDDR2 device and is not electrically or protocol-compatible with LPDDR3 or LPDDR4 memory controllers. Voltage levels, command sets, training procedures, and CA architectures differ across these DRAM generations. Source: Micron LPDDR2 datasheet and JEDEC LPDDR3/LPDDR4 specifications.
When should I choose EDB8164B4PR-1D-F-D over a 4 Gbit LPDDR2 part?
Choose the EDB8164B4PR-1D-F-D when the host SoC requires 64-bit data width at 8 Gbit density, simplifying PCB layout via a single-chip DDP solution. Choose a 4 Gbit LPDDR2 part (e.g., 128M x 32) when the design can accommodate dual-rank discrete devices or operates at lower memory bandwidth. DDP simplifies routing but doubles the load per channel.
What are the key specifications of EDB8164B4PR-1D-F-D that engineers should know?
The EDB8164B4PR-1D-F-D is an 8 Gbit (128M x 64) LPDDR2 SDRAM in a 216-WFBGA 12x12 mm package. It operates at 533 MHz / 1066 MT/s over a 1.14 V-1.95 V supply, from -30C to +85C. It is JEDEC LPDDR2 compliant, supports partial-array self-refresh and deep power-down, ships in tray packaging, and is RoHS-compliant. Source: Micron datasheet.

エンジニアリング参考データ: EDB8164B4PR-1D-F-D — 比較、設計ガイダンス、コンプライアンス情報。

選定ガイド

Choose the EDB8164B4PR-1D-F-D when the design needs 8 Gbit LPDDR2-1066 main memory in a single 64-bit-wide 216-WFBGA 12x12 mm footprint - ideal for legacy mobile platforms, infotainment head units, and industrial HMI panels that need wide data width with minimal PCB area. For high-volume SMT production, select EDB8164B4PR-1D-F-R or EDB8164B4PR-1D-F-R TR (tape-and-reel). For new designs, evaluate LPDDR3/LPDDR4 equivalents instead - the -1D-F-D is NRND. Avoid using this part in AEC-Q100 safety-critical automotive applications.

代替品との比較

パラメータ この製品 EDB8164B4PR-1D-F EDB8164B4PR-1D-F-R EDB8164B4PR-1D-F-R TR EDB8164B4PR-1D-F (Elpida) K4PZ1644QM-AGC2 family
Package 216-WFBGA (12x12 mm) 216-WFBGA (12x12 mm) - same 216-WFBGA (12x12 mm) - same 216-WFBGA (12x12 mm) - same 216-WFBGA (12x12 mm) - same 216-WFBGA (12x12 mm) - same
Brand Micron Technology Micron Technology Micron Technology Micron Technology Elpida (Micron-affiliated) Samsung Electronics
Density 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit (verify per SKU)
Organization 128M x 64 128M x 64 128M x 64 128M x 64 128M x 64 128M x 64 (verify per SKU)
Clock Frequency 533 MHz 533 MHz 533 MHz 533 MHz 533 MHz 533 MHz (verify per SKU)
Supply Voltage 1.14 V to 1.95 V 1.14 V to 1.95 V 1.14 V to 1.95 V 1.14 V to 1.95 V 1.14 V to 1.95 V 1.14 V to 1.95 V (verify per SKU)
Operating Temperature -30C to +85C -30C to +85C -30C to +85C -30C to +85C -30C to +85C -30C to +85C (verify per SKU)
Packaging Tray Tray Tape & Reel Tape & Reel Tray Tray/T&R (verify)
Lifecycle Status NRND (Legacy) NRND (Legacy) NRND (Legacy) NRND (Legacy) EOL (Elpida brand) Verify per SKU

主な差別化要因

  • Dual-channel DDP architecture in single-chip footprint （vs Discrete 4 Gbit LPDDR2 (e.g., 128M x 32))
  • Wide supply voltage window covers both core and I/O rails （vs Single-rail LPDDR2 (1.2 V only))
  • Partial-array self-refresh and deep power-down support （vs Standard DDR2 SDRAM)

設計ノート

LPDDR2 routing requires tight length matching on the 64-bit DQ group and the command/address (CA) bus. Per JEDEC LPDDR2 guidelines, route DQ to within +/- 25 mil of the longest matched trace. Keep the device within 100 mil of the host SoC BGA to minimize stubs. Use a 4-layer PCB with continuous ground reference planes under the BGA to control impedance (~50 ohm single-ended, ~100 ohm differential for CK/CK#).

Decouple the EDB8164B4PR-1D-F-D with at least four 0.1 uF X7R ceramic capacitors placed within 50 mils of the WFBGA ball-side VDD1, VDD2, and VDDQ balls. Add bulk 10 uF ceramic + 22 uF tantalum on each rail. LPDDR2-1066 transients can pull 100+ mA spikes; insufficient decoupling causes VDDQ droop that triggers training failures and CRC errors.

The 216-WFBGA 12x12 mm package has limited heat dissipation surface area. Estimated: at full 1066 MT/s read/write workload, junction temperature rise is approximately 5-10C above ambient on a 4-layer PCB with continuous ground pour. For enclosed applications (set-top box, sealed router), ensure ambient stays below 75C to maintain the 85C TC max rating with margin.

Do not substitute LPDDR2 with LPDDR3 or LPDDR4 parts without verifying host controller compatibility - CA architecture, training sequences, and VDDQ levels differ across DRAM generations. Also, do not assume EDB8164B4PR-1D-F-D is AEC-Q100 qualified; for safety-critical automotive use, request an AEC-Q100 LPDDR variant from Micron. Always validate ball-out revision against the host SoC reference design before tape-out.

コンプライアンス情報

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
鉛フリー
Yes
ハロゲンフリー
Unknown
紛争鉱物
Compliant

RoHS compliant per JLCPCB listing. Not AEC-Q100 qualified - not recommended for safety-critical automotive applications. Verify halogen-free status with Micron directly.

データ検証日: 2026-10-05 — データはXAIPARTの部品エンジニアリングチームによって検証・管理されています

関連検索

EDB8164B4PR-1D-F-D EDB8164B4PR-1D-F-D datasheet Micron EDB8164B4PR 8 Gbit LPDDR2 216-WFBGA LPDDR2 533 MHz 1.2 V mobile SDRAM EDB8164B4PR-1D-F-D vs EDB8164B4PR-1D-F LPDDR2 dual-die package mobile memory LPDDR2 smartphone main memory 8Gbit EDB8164B4PR-1D-F-D buy price where to buy EDB8164B4PR-1D-F-D in stock what is the operating voltage of EDB8164B4PR-1D-F-D EDB8164B4PR drop-in replacement Micron LPDDR2 legacy NRND EDB8164B4PR-1D-F-D pinout ball map 216-WFBGA LPDDR2 automotive infotainment memory

関連部品&用語

Micron Technology EDB8164B4PR-1D-F-D EDB8164B4PR-1D-F EDB8164B4PR-1D-F-R EDB8164B4PR-1D-F-R TR LPDDR2 SDRAM Mobile LPDDR2 DRAM DDR2 volatile memory JEDEC 216-WFBGA WFBGA (Wafer-Level Fine-pitch Ball Grid Array) BGA (Ball Grid Array) RoHS AEC-Q100 PASR (Partial-array self-refresh) deep power-down DDP (Dual-Die Package) MT/s (megatransfers per second) LPDDR2-1066 smartphone memory automotive infotainment industrial HMI IoT gateway set-top box Samsung K4PZ1644QM-AGC2 Elpida Memory host SoC
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