IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
Référence : IAUTN04S7N003ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $6.78 | $6,78 |
| 10 | $5.92 | $59,20 |
| 100 | $5.04 | $504,00 |
| 500 | $4.41 | $2 205,00 |
| 1 000 | $3.85 | $3 850,00 |
| 3 000 | $3.42 | $10 260,00 |
IAUTN04S7N003ATMA1 Présentation
An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. Power MOSFETs are a subclass of discrete semiconductors within the broader field-effect transistor family, used primarily as fast, efficient switching elements in power conversion circuits. The 40 V class is optimized for 12 V and 24 V automotive bus architectures, providing safe headroom over nominal rail voltages while minimizing conduction and switching losses. Within Infineon's OptiMOS 7 generation, this part represents the latest refinement in on-resistance per die area and figure-of-merit (FOM) optimization.
Key specifications include a typical RDS(on) of 0.24 mOhm at VGS = 10 V, an avalanche-rated single-pulse drain current, and an intrinsic body diode with 83 ns typical reverse recovery time and 126 nC reverse recovery charge. The PG-HSOF-8-9 source-down package exposes the die on a large copper pad, achieving junction-to-case thermal resistance (RthJC) typically below 0.45 °C/W, which enables very high current handling without external heatsinking in well-designed PCBs.
Architecturally, the device uses Infineon's OptiMOS 7 trench technology with a 30 V-or-above rated cell platform optimized for 40 V applications. The reduced gate charge (Qg) and output capacitance (Coss) profile yields low switching losses at high frequencies, enabling smaller magnetics in DC-DC converters. The part supports both hard-switched and soft-switched topologies, and the integrated body diode is robust enough for use as a freewheeling element in buck converters and OR-ing applications.
Typical applications include 12 V / 24 V automotive electric power steering (EPS), brushless DC (BLDC) motor drives, battery management system (BMS) protection, high-current DC-DC converters, and electric vehicle (EV) traction inverters (low-voltage side). The combination of low RDS(on) and automotive qualification makes it well-suited as a high-side or low-side switch in safety-critical modules.
When designing with this MOSFET, prioritize minimizing parasitic source inductance by using a Kelvin-source-connected footprint and placing gate-drive decoupling directly at the gate pin. The low RDS(on) is only realized with VGS = 10 V; logic-level gate drive is insufficient for full enhancement. Thermal design must rely on the bottom-exposed pad with sufficient copper area to keep Tj below 150 °C at worst-case SOA.
This page synthesizes Infineon datasheet parameters, distributor pricing across DigiKey, Mouser, and Arrow, and drop-in alternatives from the OptiMOS 7 family plus competing 40 V TOLL parts - engineering content not assembled on any single distributor page.
Alternatives de remplacement direct pour IAUTN04S7N003ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUTN04S7N003ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Mounting Type, MSL Level, Operating Temperature Range.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUCN04S7N037GATMA1
✅ Remplacement direct✓ En stock
$0.89 / unité
Voir la fiche technique →IAUCN04S7L042GATMA1
✅ Remplacement direct✓ En stock
$0.86 / unité
Voir la fiche technique →IAUCN04S7N027GATMA1
✅ Remplacement direct✓ En stock
$0.72 / unité
Voir la fiche technique →IAUCN04S7N015GATMA1
✅ Remplacement direct✓ En stock
$2.21 / unité
Voir la fiche technique →ISC011N04NM7VATMA1
✅ Remplacement direct✓ En stock
$0.41 / unité
Voir la fiche technique →IAUCN08S7L033ATMA1
✅ Remplacement direct✓ En stock
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Voir la fiche technique →IAUTN04S7N003ATMA1 Valeurs maximales et caractéristiques électriques
| Technology | OptiMOS 7 N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tj | 350 A |
| Power Dissipation (PD) at Tc=25°C | 357 W |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 °C) |
| Body Diode Pulse Current | 3510 A (tp = 100 µs, Tj = 25 °C) |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max |
| Plage de température de fonctionnement | -55 °C to +175 °C (Tj) |
| Boîtier | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) |
| Type de montage | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Statut RoHS | Compliant |
| Niveau MSL | 1 (per JEDEC J-STD-020) |
Configuration des broches de IAUTN04S7N003ATMA1
| Broche 1 | Drain — Drain connection (high current) |
| Broche 2 | Drain — Drain connection (high current) |
| Broche 3 | Drain — Drain connection (high current) |
| Broche 4 | Gate — Gate drive input (VGS) |
| Broche 5 | Drain — Drain connection (high current) |
| Broche 6 | Drain — Drain connection (high current) |
| Broche 7 | Drain — Drain connection (high current) |
| Broche 8 | Drain — Drain connection (high current) |
| Broche PAD | Source / Thermal — Source connection and thermal pad (bottom exposed) |
Zone de fonctionnement sûr (DC, Tj = 175 °C)
Applications typiques
IAUTN04S7N003ATMA1 convient pour 6 applications: Automotive Electric Power Steering (EPS), BLDC Motor Drive for Automotive Auxiliary Loads, Battery Management System (BMS) Protection Switch, High-Current DC-DC Converter (Buck/Boost), Automotive LED Headlight Matrix Switch, EV Traction Inverter (Low-Voltage Auxiliary).
Automotive Electric Power Steering (EPS)
The IAUTN04S7N003ATMA1's 0.24 mOhm RDS(on) and 350 A current rating make it ideal for the high-current half-bridge or three-phase inverter stages in 12 V / 24 V automotive electric power steering systems. EPS modules require low conduction losses during high-torque assist events, and the OptiMOS 7 cell platform minimizes both RDS(on) and switching losses to reduce ECU thermal load. The AEC-Q101 qualification and 175 °C Tj maximum support under-hood mounting with minimal derating. Compared to legacy 40 V MOSFETs in D2PAK packages, the PG-HSOF-8-9 (TOLL) footprint shrinks PCB area by roughly 50% while improving thermal performance via the bottom-exposed source pad, enabling compact ECU integration.
Recommandé
BLDC Motor Drive for Automotive Auxiliary Loads
For 12 V / 24 V brushless DC motor drives used in pumps, fans, and HVAC blowers, the IAUTN04S7N003ATMA1 provides the per-switch current capability needed for multi-kW loads. The body diode's 83 ns trr and 126 nC Qrr enable reliable synchronous rectification without external freewheeling diodes. In a typical 3-phase bridge, six of these MOSFETs handle continuous phase currents well above 100 A with adequate thermal margin. The TOLL package's source-down configuration simplifies PCB layout by allowing direct heatsink mounting on the bottom side of the board, a common requirement in space-constrained automotive ECUs.
Recommandé
Battery Management System (BMS) Protection Switch
In automotive 12 V / 48 V battery management systems, the IAUTN04S7N003ATMA1 serves as a low-loss disconnect or precharge switch. Its 0.24 mOhm RDS(on) keeps continuous conduction losses below 2 W at 100 A battery current, eliminating the need for parallel MOSFETs in many designs. The 40 V VDS rating comfortably handles 24 V system transients while the AEC-Q101 qualification satisfies automotive reliability requirements. Built-in avalanche ruggedness supports hot-swap and reverse-battery protection scenarios. The TOLL package's exposed pad is ideal for direct soldering to a copper bus bar for high-current battery terminations.
Recommandé
High-Current DC-DC Converter (Buck/Boost)
For 12 V to 24 V or 24 V to 12 V bidirectional DC-DC converters in mild-hybrid vehicles, the IAUTN04S7N003ATMA1's low gate charge and low Qrr reduce switching losses at the 50-200 kHz operating frequencies typical of these converters. At 40 V VDS the part is perfectly suited for 24 V bus voltages with margin for load-dump transients (suppressed to ~35 V). The OptiMOS 7 technology's improved FOM (RDS(on) x Qg) enables higher switching frequencies, which shrinks magnetics and output capacitor values. A 4 kW converter typically uses two of these MOSFETs in parallel per switch position.
Recommandé
Automotive LED Headlight Matrix Switch
Matrix LED headlight systems use individual MOSFET switches to control each LED pixel or segment, demanding low RDS(on) and fast switching. The IAUTN04S7N003ATMA1 handles the 12 V battery rail switching with minimal power dissipation, even at high pixel counts. The TOLL package allows dense PCB layouts with adequate thermal management for the headlight housing. AEC-Q101 qualification ensures reliability under the wide temperature swings experienced in headlamp modules. While typical LED currents are modest (1-5 A), parallel MOSFET configurations benefit from the part's excellent thermal resistance.
Recommandé
EV Traction Inverter (Low-Voltage Auxiliary)
In EV traction inverter auxiliary rails (e.g., 12 V from DC-DC converter output, or low-voltage battery isolation switches), the IAUTN04S7N003ATMA1 provides the high-current switching needed for high-power auxiliary circuits. While main traction inverters use 600 V+ SiC MOSFETs, the low-voltage subsystems benefit from this 40 V part's low RDS(on). The OptiMOS 7 family is widely used in EV power-electronics modules, and the AEC-Q101 qualification supports ASIL-D system designs. The TOLL package's compact 10x12 mm footprint enables high power density in modular inverter designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUTN04S7N003ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7N027GATMA1 | ISC011N04NM7VATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOF-8-9 (TOLL, 10x12 mm) | PG-HSOF-8-9 (TOLL) - same | PG-HSOF-8-9 (TOLL) - same | PG-HSOF-8-9 (TOLL) - same | PG-HSOF-8-9 (TOLL) - same | PG-HSOF-8-9 (TOLL) - same |
| VDS max (V) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Technology | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Lowest RDS(on) in the Infineon 40V OptiMOS 7 TOLL family (vs IAUCN04S7N037GATMA1)
- 350 A continuous drain current rating (vs IAUCN04S7L042GATMA1)
- Optimized body diode for synchronous rectification (vs IAUCN04S7N027GATMA1)
Notes de conception
The PG-HSOF-8-9 (TOLL) package's bottom-exposed source pad is the primary thermal path. Estimated: at 100 A continuous current with 0.24 mOhm RDS(on), conduction loss is approximately 2.4 W. With a typical RthJC of 0.4 °C/W and RthJA of 35 °C/W on a 1 oz copper 4-layer PCB with 1 sq inch thermal pad, junction temperature rises roughly 84 °C above ambient. For maximum SOA headroom, use 2 oz copper on top and bottom layers and maximize the drain copper pour. The datasheet SOA curve must be respected at all load conditions.
Minimize parasitic source inductance by using the Kelvin-source configuration where the gate-drive return path is separate from the main source current path. Place a 1 Ω gate resistor and a gate-source pull-down (10 kΩ) directly at the gate pin to prevent Miller-effect-induced turn-on during fast VDS transitions. Place gate-drive decoupling (100 nF + 10 µF ceramic) within 5 mm of the gate pin. The drain copper pour should connect directly to the load with minimal inductance; use multiple vias for thermal relief.
Do not assume 0.24 mOhm RDS(on) at VGS = 4.5 V - the part requires 10 V gate drive for full enhancement. Logic-level gate drivers will result in significantly higher conduction losses. Also, verify avalanche energy rating (EAS) for unclamped inductive switching applications; the datasheet's single-pulse avalanche current must be respected or use a TVS / snubber for protection. Maximum VGS is ±20 V - exceeding this destroys the gate oxide.
Recommended PCB land pattern follows Infineon's PG-HSOF-8-9 application note, with source pad sized to maximize thermal dissipation. Use 2 oz copper on the source-side layer for optimal heat spreading. The gate pin (pin 4) should be routed with a small trace stub to minimize parasitic gate inductance; the source pin return should connect to a low-inductance ground plane. A gate-drive IC placed within 10 mm of the gate pin minimizes loop inductance.
Informations de conformité
AEC-Q101 qualified for automotive applications per Infineon product page. RoHS compliant per datasheet declaration. Halogen-free status not explicitly stated in available web data.
