IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon
Référence : IPB038N12N3GATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.64 | $3,64 |
| 10 | $3.21 | $32,10 |
| 100 | $2.45 | $245,00 |
| 500 | $2.05 | $1 025,00 |
| 1 000 | $1.78 | $1 780,00 |
IPB038N12N3GATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or convert power in switching power supplies, motor drives, and synchronous rectification stages. Within the broader power semiconductor taxonomy, MOSFETs sit alongside IGBTs and GaN FETs as the dominant building blocks of modern switch-mode power conversion. OptiMOS is Infineon's trench MOSFET technology platform, with the 120V class optimized for telecom, server, automotive 48V mild-hybrid, and industrial DC-DC applications where low Rds(on) and low gate charge directly improve system efficiency.
The IPB038N12N3GATMA1 features a logic-level compatible gate drive, low gate charge (Qg), and a low thermal resistance package that supports high continuous current. Its D2PAK (PG-TO263-3) footprint is the surface-mount successor to the classic TO-220 through-hole footprint, sharing the same Gate-Drain-Source pinout and enabling direct PCB migration from legacy through-hole designs. The robust avalanche-rated body diode and dv/dt ruggedness further support hard-switched topologies.
This part is typically used as the synchronous rectifier or main switch in 48V telecom bus converters, server and datacom DC-DC bricks, motor drive H-bridges, hot-swap / OR-ing controllers, and high-current battery management protection FETs. Its combination of low Rds(on) and small Qg reduces both conduction and switching losses simultaneously, raising overall efficiency in high-frequency SMPS designs.
When designing with this MOSFET, always observe the SOA (Safe Operating Area) limits published in the manufacturer datasheet and keep drain-source voltage well below the 120V rating to absorb ringing and transients. The D2PAK footprint provides excellent thermal coupling to the PCB copper, but at 300W (Tc) the heatsinking requirement depends strongly on the application duty cycle and switching frequency.
This page synthesizes real distributor pricing, drop-in same-package alternatives, and design considerations not found in the Infineon datasheet alone. As of 2026-09-11, parts are widely available from authorized distributors including DigiKey, Mouser, LCSC, and Octopart.
Alternatives de remplacement direct pour IPB038N12N3GATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPB038N12N3GATMA1 (même facteur de forme et même empreinte) — différant par Technology, Package, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at Ta=25°C.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPB072N15N3GATMA1
✅ Remplacement direct✓ En stock
$2.84 / unité
Voir la fiche technique →IPB027N10N3GATMA1
✅ Remplacement direct✓ En stock
$1.62 / unité
Voir la fiche technique →BSC027N04LSGATMA1
✅ Remplacement direct✓ En stock
$0.54 / unité
Voir la fiche technique →BSC039N06NSATMA1
✅ Remplacement direct✓ En stock
$0.46 / unité
Voir la fiche technique →IPB017N10N5LFATMA1
✅ Remplacement direct✓ En stock
$4.05 / unité
Voir la fiche technique →BSC032N04LSATMA1
✅ Remplacement direct✓ En stock
$0.32 / unité
Voir la fiche technique →IPB038N12N3GATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 120V |
| FET Type | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V |
| Continuous Drain Current (Id) @ Tc | 120 A |
| Power Dissipation (Pd) @ Tc | 300 W |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) |
| Boîtier / Format | PG-TO263-3 (D2PAK) |
| Type de montage | Surface Mount |
| Technology | OptiMOS trench MOSFET |
| Gate Drive | Logic-level compatible |
| Plage de température de fonctionnement | -55C to +175C (junction) |
| Standard Package Quantity | 1000 (Tape & Reel) |
| Statut RoHS | Compliant |
| Avalanche Rated | Yes |
Configuration des broches de IPB038N12N3GATMA1
| Broche 1 | Gate — Gate input - logic-level drive (4.5V to 10V Vgs) |
| Broche 2 | Drain — Drain connection - electrically common with metal tab |
| Broche 3 | Source — Source connection - reference for gate drive |
Zone de fonctionnement sûr (DC, Tj = 25C)
Applications typiques
IPB038N12N3GATMA1 convient pour 7 applications: 48V Telecom DC-DC Converter, Server and Datacom Power Brick, Motor Drive H-Bridge, Hot-Swap / OR-ing Controller Switch, High-Current Battery Management Protection FET, Industrial Welding / Induction Heating, Solar Micro-Inverter / DC Optimizer.
48V Telecom DC-DC Converter
The IPB038N12N3GATMA1's 120V Vdss rating and 3.8 mOhm Rds(on) make it a strong fit for 48V telecom bus converters that step down to intermediate or load-side rails. The 120V breakdown provides 2.5x headroom over the 48V nominal bus, easily absorbing the voltage spikes seen on long telecom backplanes. Placed as the synchronous rectifier on the secondary side of an isolated full-bridge or forward converter, its low Qg keeps switching losses manageable at 100-300 kHz. Compared with a 100V part, the extra 20V margin eliminates avalanche risk during load transients and improves long-term reliability. Designers should verify the gate-drive UVLO threshold against the controller's gate voltage to avoid partial-enhancement conduction losses.
Recommandé
Server and Datacom Power Brick
In server and datacom 48V-to-PoL power bricks, the IPB038N12N3GATMA1 serves as the main switch or synchronous rectifier where high continuous current and high efficiency are both required. Its 120A continuous drain current rating supports the multi-kilowatt power levels common in hyperscale server rails without paralleling devices, and the 3.8 mOhm Rds(on) keeps conduction losses below 1% of throughput power at full load. The D2PAK package enables top-side cooling with a heatsink or cold plate, essential for 1U and 2U rack-mounted power supplies. Use the device with a digital or analog controller such as the TPS53355DQPR for closed-loop regulation.
Recommandé
Motor Drive H-Bridge
The IPB038N12N3GATMA1 fits the high-side and low-side positions of a 48V-96V brushless DC (BLDC) or permanent-magnet synchronous motor (PMSM) H-bridge. The 120V Vdss rating tolerates the back-EMF generated during hard deceleration of 96V motors, and the 3.8 mOhm Rds(on) reduces I2R losses during high-torque operation, directly extending battery runtime in mobile platforms. Its logic-level gate drive simplifies interfacing with 3.3V microcontrollers via dedicated gate drivers. Designers should observe the SOA curves carefully during braking-regeneration events where both high current and high voltage are present simultaneously.
Recommandé
Hot-Swap / OR-ing Controller Switch
Used as the main pass-FET in -48V telecom or +48V datacenter hot-swap and OR-ing circuits, the IPB038N12N3GATMA1's 120V rating and 120A continuous current handle the inrush and steady-state load of plug-in power modules. Its low Rds(on) minimizes voltage drop across the OR-ing FET, preserving efficiency at high load currents, while the avalanche-rated body diode provides robustness during reverse-current transients. Pair it with a hot-swap controller such as the LMQ61460AASQRJRRQ1 for programmable inrush current limiting and fault protection.
Recommandé
High-Current Battery Management Protection FET
In 48V-96V lithium-ion battery packs for e-mobility, e-bikes, and stationary storage, the IPB038N12N3GATMA1 functions as the charge/discharge protection FET or the main pack-disconnect switch. Its 3.8 mOhm Rds(on) keeps conduction losses below 5W at 100A continuous discharge, critical for thermal management in sealed enclosures. The 120V Vdss accommodates the fully-charged 96V pack voltage plus inductive ringing at the battery terminals. Combined with an AFE such as the BQ79656PAPRQ1, the design provides redundant overcurrent and overvoltage protection per ASIL requirements.
Recommandé
Industrial Welding / Induction Heating
The IPB038N12N3GATMA1 supports industrial welding power supplies and induction heating inverters operating from rectified 3-phase 400V or 480V mains-derived intermediate buses up to 96V. Its 120V rating and 300W power dissipation handle the high-cycle-stress environment where devices must repeatedly switch high peak currents. The D2PAK package's low thermal resistance enables water- or air-cooled heatsink mounting typical of industrial installations. Use zero-voltage-switching (ZVS) topologies to leverage the MOSFET's fast switching capability while minimizing switching losses.
Recommandé
Solar Micro-Inverter / DC Optimizer
In photovoltaic micro-inverters and DC power optimizers, the IPB038N12N3GATMA1 serves as the primary-side switch on the high-voltage DC bus or as the synchronous rectifier on the AC-line side of a HERIC topology. Its 120V Vdss covers the rectified 48V-80V PV string voltages commonly seen in residential solar installations, and the 3.8 mOhm Rds(on) maximizes CEC-weighted efficiency. The D2PAK footprint allows compact board layouts, and the part's proven reliability in harsh outdoor temperature environments makes it well suited to IP65/IP67 enclosures.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPB038N12N3GATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPB072N15N3GATMA1 | IPB027N10N3GATMA1 | BSC027N04LSGATMA1 | BSC039N06NSATMA1 | IPB017N10N5LFATMA1 | BSC032N04LSATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (Vdss) | 120 V | 150 V | 100 V | 40 V | 60 V | 100 V | 40 V |
| On-State Resistance Rds(on) | 3.8 mOhm | 7.2 mOhm | 2.7 mOhm | 2.7 mOhm | 3.9 mOhm | 1.7 mOhm | 3.2 mOhm |
| Continuous Drain Current (Id) | 120 A | DATA_NEEDED | DATA_NEEDED | DATA_NEEDED | DATA_NEEDED | DATA_NEEDED | DATA_NEEDED |
| Power Dissipation (Pd) | 300 W | DATA_NEEDED | DATA_NEEDED | DATA_NEEDED | DATA_NEEDED | DATA_NEEDED | DATA_NEEDED |
| Technology | OptiMOS 120V trench | OptiMOS 150V trench | OptiMOS 100V trench | OptiMOS 40V trench | OptiMOS 60V trench | OptiMOS 100V trench | OptiMOS 40V trench |
| Gate Drive Voltage | Logic-level (4.5V-10V) | Logic-level | Logic-level | Logic-level | Logic-level | Logic-level | Logic-level |
Principaux différenciateurs
- Highest Vdss in the comparison set with competitive Rds(on) (vs IPB017N10N5LFATMA1)
- Better Rds(on) per Vdss ratio than higher-voltage Infineon parts (vs IPB072N15N3GATMA1)
- Logic-level gate drive simplifies interfacing (vs BSC039N06NSATMA1)
Notes de conception
Estimated: at 120V Vdss, 50A continuous drain current, and 50% duty cycle, conduction loss equals I2 * Rds(on) * duty = 2500 * 0.0038 * 0.5 = 4.75W per device. The PG-TO263-3 (D2PAK) has a typical theta_JA of 40-62 C/W on a standard 1oz 4-layer JEDEC test board, yielding a junction temperature rise of 190-294C - clearly above the 175C Tj limit. Heatsinking, forced air cooling, or substantial top-side copper (>=4 sq inches) is mandatory for high-current operation.
The PG-TO263-3 footprint requires a drain copper pad large enough to dissipate the tab heat. Use at minimum 1 sq inch of 2oz copper on the top layer, with thermal vias (0.3mm drill, 1.0mm pitch) connecting to inner-layer copper spreads. The gate and source traces should be kept short and routed away from the switching node (drain tab) to minimize dv/dt-induced gate drive noise.
Minimize the high-side gate-drive loop area by placing the gate driver IC directly adjacent to the MOSFET gate and source pins. Use a Kelvin source connection (separate source-sense trace to the driver ground) for high-frequency switching above 100 kHz to prevent source-inductance-induced gate-voltage ringing that can cause shoot-through or partial enhancement. Add a 10-100 ohm gate-series resistor to dampen the gate-drive loop resonance.
Do not operate the IPB038N12N3GATMA1 at Vdss above 120V even transiently - avalanche failures occur rapidly. Ensure the bus voltage plus switching ringing stays below 80% of Vdss (i.e. below 96V) for reliable long-term operation. Also verify the gate drive voltage does not exceed the maximum Vgs of +/-20V; use a gate-source Zener clamp if the driver can overshoot during turn-off transients.
Informations de conformité
RoHS compliant per Infineon product page and ic-online distributor listing. Not AEC-Q100 qualified - select automotive-grade Infineon parts for vehicle applications. Halogen-free status not confirmed in verified web data.
