IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon
Référence : IPD50N04S408ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.3 | $1,30 |
| 10 | $1.17 | $11,70 |
| 100 | $0.98 | $98,00 |
| 500 | $0.82 | $410,00 |
| 1 000 | $0.69 | $690,00 |
IPD50N04S408ATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for high-efficiency power conversion. The IPD50N04S408ATMA1 belongs to the Infineon OptiMOS-T2 40 V family, which sits within the broader class of trench MOSFETs optimized for low on-state resistance per unit silicon area. Compared with older planar MOSFET generations, OptiMOS-T2 lowers R DS(on) by roughly 50 % at the same die size, improving conduction efficiency in synchronous rectification and high-current load-switch applications.
Key differentiating specifications include a very low on-state resistance (typical R DS(on) in the single-digit milliohm range at V GS = 10 V), a logic-level-compatible gate threshold around 1.7 V typical, and integrated ESD protection. The PG-TO252-3-313 package provides a low thermal-resistance path through the drain tab, enabling continuous high-current operation with a standard PCB footprint that is pin-compatible with most industry DPAK MOSFETs.
The device uses Infineon's advanced trench-cell OptiMOS-T2 process technology, which minimizes both switching and conduction power losses for highest thermal efficiency. The robust cell design combined with the exposed metal drain tab supports superior quality and reliability in automotive power-train, body-electronics, and industrial load-switch topologies.
Typical applications include automotive 12 V load switching, DC-DC converter synchronous rectification, motor drive H-bridges, solenoid driving, and battery protection circuits. The 40 V drain-source rating provides ample margin above the 12 V automotive bus and 24 V industrial bus, accommodating inductive transients and ring-voltage spikes.
When designing with this MOSFET, ensure the gate-drive voltage swings fully to 10 V for the lowest R DS(on), and use a gate-source resistor of 10 kΩ or less to prevent inadvertent turn-on from leakage currents. The drain tab should be soldered to at least 1 cm² of copper pour to keep junction temperature within safe limits at full load.
Alternatives de remplacement direct pour IPD50N04S408ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPD50N04S408ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, MSL Level, RoHS Status, Operating Temperature Range.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPD50N04S4L08ATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPD90N04S403ATMA1
✅ Remplacement direct✓ En stock
$1.05 / unité
Voir la fiche technique →IPD50N03S4L06ATMA1
✅ Remplacement direct✓ En stock
$0.49 / unité
Voir la fiche technique →IPG20N04S4L07ATMA1
✅ Remplacement direct✓ En stock
$1.65 / unité
Voir la fiche technique →BSC019N08NS5ATMA1
✅ Remplacement direct✓ En stock
$1.78 / unité
Voir la fiche technique →IPB021N10NM5LF2ATMA1
✅ Remplacement direct✓ En stock
$2.75 / unité
Voir la fiche technique →ISC015N06NM5LF2ATMA1
✅ Remplacement direct✓ En stock
$2.21 / unité
Voir la fiche technique →BSC014N04LSATMA1
✅ Remplacement direct✓ En stock
$0.74 / unité
Voir la fiche technique →IPD50N04S408ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T2 |
| Polarity | N-Channel |
| Mode | Enhancement-mode |
| Drain-Source Voltage (V DS) | 40 V |
| Continuous Drain Current (I D, Tc) | 50 A |
| Power Dissipation (P D, Tc) | 46 W |
| Boîtier | PG-TO252-3-313 (DPAK) |
| Type de montage | Surface Mount |
| Plage de température de fonctionnement | -55 °C to +175 °C |
| Niveau MSL | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Tested | 100 % Avalanche tested |
| Green Package (RoHS) | RoHS compliant |
Configuration des broches de IPD50N04S408ATMA1
| Broche 1 | GATE — Gate drive input |
| Broche 2 | DRAIN — Drain connection (also tied to exposed metal tab) |
| Broche 3 | SOURCE — Source connection |
Zone de fonctionnement sûr
Applications typiques
IPD50N04S408ATMA1 convient pour 6 applications: Automotive 12 V Load Switching, DC-DC Converter Synchronous Rectification, Motor Drive H-Bridge / Half-Bridge, Battery Protection and Disconnect, Solenoid and Valve Drivers, Power OR-ing and Hot Swap.
Automotive 12 V Load Switching
The IPD50N04S408ATMA1 is ideal for automotive 12 V load switching in body electronics modules, lighting drivers, and seat-control circuits. Its 40 V drain-source rating provides ample margin above the 12 V automotive bus while tolerating load-dump transients up to 35 V. The 50 A continuous drain current easily handles peak inrush of bulbs, motors, and solenoids. AEC-Q101 qualification and 175 °C junction rating guarantee reliability under hood and cabin thermal stress. Engineers typically place the MOSFET on the high-side of the load with a 10 V gate drive from a pre-regulator and a 10 kΩ gate-source pull-down to prevent false turn-on from leakage paths.
Recommandé
DC-DC Converter Synchronous Rectification
In non-isolated buck and synchronous rectifier stages for 12 V automotive or 24 V industrial rails, the IPD50N04S408ATMA1 serves as the low-side synchronous FET. Its low R DS(on) minimizes conduction loss at high duty cycles, while the 46 W power dissipation rating supports continuous 30-40 A output current with a properly thermal-managed PCB. The 40 V V DS rating safely accommodates ringing from the high-side MOSFET's drain-node transition. Place the part adjacent to the controller with a 10 kΩ gate-source pull-down and a small gate-series resistor (10-22 Ω) to control ringing.
Recommandé
Motor Drive H-Bridge / Half-Bridge
The IPD50N04S408ATMA1 is well suited for low-voltage brushed-DC motor drive H-bridges and three-phase inverter low-side stages in 12 V automotive applications such as window lift, sunroof, and pump controllers. The 50 A continuous rating handles typical motor stall currents of 20-30 A, while the 40 V V DS margin tolerates inductive flyback. Pair each IPD50N04S408ATMA1 with a dedicated gate driver such as the IR2104STRPBF and use Schottky freewheeling across the motor terminals for additional protection. The AEC-Q101 qualification supports automotive OEM qualification cycles.
Recommandé
Battery Protection and Disconnect
Used as the main disconnect MOSFET in 12 V lead-acid or lithium battery management systems, the IPD50N04S408ATMA1 offers 50 A continuous current handling and 46 W dissipation in a compact DPAK. The low R DS(on) reduces steady-state loss across the protection FET, preserving battery runtime. The exposed drain tab simplifies thermal coupling to the chassis for heat-sinking. The 100 % avalanche rating adds robustness against reverse-battery and load-dump transients common in automotive battery systems.
Recommandé
Solenoid and Valve Drivers
Industrial solenoid valves, fuel injectors, and pneumatic actuators are well served by the IPD50N04S408ATMA1. The 50 A peak capability supports the high inrush current typical of solenoid activation, while the 40 V V DS rating comfortably exceeds 24 V industrial bus levels. Place a flyback diode across the solenoid coil to clamp inductive kick. The automotive-grade robustness also suits harsh industrial environments with wide temperature swings and vibration.
Recommandé
Power OR-ing and Hot Swap
In redundant power-supply OR-ing and hot-swap controller circuits, the IPD50N04S408ATMA1 acts as the disconnect element between the source and the load. The low R DS(on) minimizes voltage drop and dissipation, while the 40 V V DS rating tolerates transients during plug-in events. Connect the gate to a controlled hot-swap controller reference through a resistor divider; the 100 % avalanche tested rating provides safety margin against inrush transients and accidental reverse polarity events.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPD50N04S408ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPD50N04S4L08ATMA1 | IPD90N04S403ATMA1 | BSC019N08NS5ATMA1 | BSC014N04LSATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (V DS) | 40 V | 40 V | 40 V | 80 V | 40 V |
| Continuous Drain Current (I D) | 50 A | 50 A | 90 A | 100 A | 100 A+ |
| Technology Generation | OptiMOS-T2 | OptiMOS-T2 (logic-level) | OptiMOS-T2 | OptiMOS 5 | OptiMOS 5 |
| Gate Drive | Standard (10 V) | Logic-level (3.3-5V) | Standard (10 V) | Standard (10 V) | Logic-level (4.5V) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Principaux différenciateurs
- AEC-Q101 automotive qualification (vs IPD50N04S4L08ATMA1)
- Balanced 40V/50A rating (vs BSC019N08NS5ATMA1 (OptiMOS 5, 80V))
- Lower on-state resistance per cost (vs IPD90N04S403ATMA1 (90A OptiMOS-T2))
Notes de conception
Estimated: At continuous 30 A load on PG-TO252-3-313 with typical R DS(on) of ~5 mΩ at V GS = 10 V, conduction loss is approximately 4.5 W. The exposed drain tab must be soldered to at least 1 cm² of 2 oz copper to keep junction temperature below 125 °C at 25 °C ambient. For full 50 A continuous operation, add an external heat sink or substantially larger copper pour. The 175 °C maximum junction rating allows brief overload events but continuous operation should target T J < 150 °C for reliability margin.
Use a star-grounded layout that ties the source Kelvin connection, gate driver return, and controller ground at a single point to avoid source-inductance-induced gate-rail collapse during switching transitions. Place a 10 kΩ gate-source resistor directly across the gate and source pins to prevent floating-gate turn-on. Add a small (10-22 Ω) gate-series resistor to control ringing and EMI. Place the input bypass capacitor as close to the drain tab as physically possible.
Common pitfalls include: (1) driving the gate with only 5 V when the standard part needs 10 V for full R DS(on) specification, (2) omitting the gate-source pull-down resistor which causes floating-gate turn-on during controller reset, (3) undersizing the copper pour which causes thermal runaway at moderate current, (4) using the wrong DPAK footprint variant (TO-252 vs TO-252-3-313 - the 313 variant has extended lead length). Always verify the exact footprint against the manufacturer datasheet before PCB fab.
Informations de conformité
AEC-Q101 qualified per the manufacturer datasheet (automotive standard, equivalent in spirit to AEC-Q100 for discretes). RoHS compliant green package. MSL1 rated to 260 °C peak reflow. 100 % avalanche tested. Operating junction temperature -55 °C to +175 °C.
