IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5
Référence : IQDH88N06LM5ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.77 | $5,77 |
| 10 | $5.1 | $51,00 |
| 100 | $4.25 | $425,00 |
| 500 | $3.55 | $1 775,00 |
| 1 000 | $3.05 | $3 050,00 |
IQDH88N06LM5ATMA1 Présentation
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the insulated gate to conduct current between drain and source. Power MOSFETs are foundational switching devices in switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages, and they sit within the power-semiconductor hierarchy: MOSFET -> discrete semiconductor -> power management. The OptiMOS 5 family represents Infineon's fifth-generation 60V/80V/100V/120V/150V/200V trench technology aimed at minimizing conduction and switching losses.
Key features include 0.86 mOhm RDS(on) at 10V VGS (a class-leading figure for 60V in this footprint), low gate charge, body diode optimized for hard switching, and source-down pad architecture that pulls heat directly into the PCB copper. The device is rated for 3W at Ta and 333W at Tc, giving designers a wide thermal budget when paired with adequate PCB copper area. The 60V absolute maximum rating provides substantial margin above nominal 48V telecom and 24V industrial bus rails, supporting transient tolerance per typical SMPS design rules.
Technically, the OptiMOS 5 cell shrinks die pitch while improving the figure-of-merit (FOM = RDS(on) x Qg), enabling both lower conduction loss and faster switching at high di/dt. The PG-TSON-8-9 source-down footprint replaces traditional DPAK/TO-220 layouts with a low-profile 5x6 mm PQFN, freeing board area and improving thermal coupling to inner copper layers. Typical application uses include primary-side switches in telecom bricks, secondary-side synchronous rectifiers, hot-swap controllers in 48V server rails, and high-current point-of-load (POL) converters.
In design, the source-down pad must be soldered directly to a copper pour of at least 1 square inch on the top layer to achieve the rated thermal performance; thermal vias to internal copper planes are strongly recommended. Gate drive should be a 10V rail with low-impedance turn-off (4V or higher for full enhancement), and a gate-source resistor of 10-100 ohm controls ringing. The 60V rating leaves 20-30% headroom over a nominal 48V input, supporting typical telecom transient profiles.
Alternatives de remplacement direct pour IQDH88N06LM5ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IQDH88N06LM5ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Temperature Range, MSL Level, Drain-to-Source Voltage (VDS).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IQDH88N06LM5CGSCATMA1
✅ Remplacement direct✓ En stock
$2.31 / unité
Voir la fiche technique →IQDH35N03LM5SCATMA1
✅ Remplacement direct✓ En stock
$2.05 / unité
Voir la fiche technique →ISC012N06LM5ATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
BSC019N04LSGATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSC050N04LSGATMA1
✅ Remplacement direct✓ En stock
$0.41 / unité
Voir la fiche technique →IPB60R040CFD7ATMA1
✅ Remplacement direct✓ En stock
$5.19 / unité
Voir la fiche technique →IQDH88N06LM5ATMA1 Valeurs maximales et caractéristiques électriques
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench) |
| Drain-to-Source Voltage (VDS) | 60 V |
| Drain Current (ID) Continuous at Ta | 42 A |
| Drain Current (ID) Continuous at Tc | 447 A |
| RDS(on) Max at VGS=10V | 0.86 mOhm |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 333 W |
| Boîtier | PG-TSON-8-9 (PQFN 5x6) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
Configuration des broches de IQDH88N06LM5ATMA1
| Broche 1 | Source — Source (tied to source-down thermal pad) |
| Broche 2 | Source — Source (tied to source-down thermal pad) |
| Broche 3 | Source — Source (tied to source-down thermal pad) |
| Broche 4 | Source — Source (tied to source-down thermal pad) |
| Broche 5 | Source — Source (tied to source-down thermal pad) |
| Broche 6 | Gate — Gate drive input |
| Broche 7 | Source — Source (tied to source-down thermal pad) |
| Broche 8 | Source — Source (tied to source-down thermal pad) |
| Broche 9 | Drain / Thermal Pad — Drain and source-down thermal pad (underside) |
Zone de fonctionnement sûr (DC)
Applications typiques
IQDH88N06LM5ATMA1 convient pour 6 applications: 48V Telecom SMPS Primary Switch, Secondary-Side Synchronous Rectifier, High-Performance Computing POL Converters, Industrial 24V Brushless DC Motor Drive, Hot-Swap / eFuse on 48V Backplane, Solar Inverter Boost Stage.
48V Telecom SMPS Primary Switch
The IQDH88N06LM5ATMA1 serves as the primary-side main switch in 48V telecom bricks and intermediate bus converters where its 60V VDS leaves ~25% margin above the nominal 48V input rail while supporting telecom transient profiles. The 0.86 mOhm RDS(on) and 333W Tc dissipation minimize conduction loss at 20-40A primary currents, while the OptiMOS 5 cell shrinks switching loss to enable higher frequency (>200 kHz) designs that shrink magnetics. Place it on a source-down copper pour with thermal vias to inner planes; gate-drive the part with a 10V rail from an isolated bootstrap or gate-drive IC such as 2EDL8033G4CXTMA1. Compared to older 80V/100V parts, the 60V rating trades absolute headroom for substantially lower RDS(on) and FOM, which is the right trade-off at 48V nominal.
Recommandé
Secondary-Side Synchronous Rectifier
In secondary-side synchronous rectification stages of 48V-to-low-voltage isolated converters, the IQDH88N06LM5ATMA1's 0.86 mOhm RDS(on) replaces Schottky diodes with a 5-10x conduction-loss reduction, directly improving overall converter efficiency by 1-3%. The 60V VDS rating provides ample margin over the reflected voltage stress of 48V-input forward converters, and the OptiMOS 5 body diode is optimized for the dead-time commutation typical in synchronous-rectifier operation. Drive the gate synchronously with the secondary-side controller and provide 4-10V gate drive; ensure dead-time is tuned to minimize body-diode conduction. This part is also a strong candidate for LLC and phase-shift full-bridge secondary rectifiers.
Recommandé
High-Performance Computing POL Converters
For high-current point-of-load (POL) converters delivering 1V/100A+ rails to AI accelerator and FPGA cores, the IQDH88N06LM5ATMA1's 447A Tc rating and 0.86 mOhm RDS(on) enable very low conduction loss in the synchronous-rectifier position of 48V-to-1V bus converters. The compact PG-TSON-8-9 footprint allows dense paralleling of multiple FETs to scale current while sharing a single gate-drive loop. Thermal performance is dominated by PCB copper area under the source-down pad; 4-layer boards with 2 oz copper and dense thermal via arrays can sustain 30-50A per FET continuously. This topology is increasingly common in AI training and inference boards where 48V distribution minimizes I²R loss to the load.
Recommandé
Industrial 24V Brushless DC Motor Drive
In industrial 24V BLDC motor drive stages, the IQDH88N06LM5ATMA1 handles the 24V nominal supply with the 60V VDS rating absorbing inductive kick-back transients and braking-regeneration events that can spike above 40V. The 0.86 mOhm RDS(on) reduces I²R loss in the switching FETs that cycle at 20-50 kHz, while the 333W Tc rating supports the high-peak currents typical of motor-startup transients. The PQFN 5x6 footprint integrates cleanly into compact motor-control PCBs alongside gate drivers and Hall-sensor circuitry. For three-phase drives, six FETs can populate a compact inverter footprint while leaving room for current-sense and protection circuitry.
Recommandé
Hot-Swap / eFuse on 48V Backplane
The IQDH88N06LM5ATMA1 suits 48V backplane hot-swap and electronic-fuse (eFuse) functions where its 60V VDS withstands transient events during hot-plug and its 447A Tc rating supports brief inrush currents. The source-down package pulls heat into the PCB during linear-mode current limiting, dissipating up to 333W transiently; designers must validate SOA against the datasheet's DC curve. The low RDS(on) reduces steady-state voltage drop and heat when fully enhanced. Pair it with a hot-swap controller like 2EDB7259KXUMA1 to provide programmable current limiting, fault indication, and inrush profiling for high-availability server and telecom shelves.
Recommandé
Solar Inverter Boost Stage
In solar inverter boost (step-up) stages that lift PV panel voltage (~30-50V open circuit) to a 400V DC bus, the IQDH88N06LM5ATMA1's 60V VDS covers 50V panel strings with margin while the 0.86 mOhm RDS(on) minimizes conduction loss at 20-40A switch currents. The OptiMOS 5 process enables high-frequency PWM (100 kHz+) that shrinks the boost inductor and output capacitor, reducing total BOM cost. The PQFN 5x6 footprint allows dense power-stage layout, and the source-down pad pulls heat directly into PCB copper. This part can replace older 80V/100V MOSFETs in sub-50V PV string designs with substantial efficiency gains.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IQDH88N06LM5ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IQDH88N06LM5CGSCATMA1 | IQDH35N03LM5SCATMA1 | ISC012N06LM5ATMA1 | BSC019N04LSGATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS (Drain-to-Source Voltage) | 60 V | 60 V | 30 V | 60 V | 40 V | 60 V |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS | CoolMOS CFD7 |
| Screening Grade | Industrial (standard) | Enhanced/industrial | Enhanced/industrial | Industrial | Industrial | Industrial |
Principaux différenciateurs
- Class-leading 0.86 mOhm RDS(on) in PQFN 5x6 at 60V (vs IPB60R040CFD7ATMA1)
- Source-down PG-TSON-8-9 footprint with 333W Tc rating (vs ISC012N06LM5ATMA1)
- 60V rating matches 48V telecom rail with margin (vs BSC019N04LSGATMA1 (40V))
Notes de conception
Estimated: at VIN=48V, ID=20A, RDS(on)=0.86 mOhm (hot, ~1.2 mOhm), conduction loss is approximately 20A x 20A x 1.2 mOhm = 0.48W. The PG-TSON-8-9 source-down package is designed to dissipate through the PCB copper under the package; design with at least 1 square inch of 2 oz copper on the top layer plus a dense thermal via array (0.3 mm pitch, 12+ vias) to internal copper planes. Without adequate copper, the part will derate to much lower current than the silicon rating suggests. Always check the datasheet's thermal resistance (theta_JA) vs PCB copper area curves before finalizing layout.
The source-down pad MUST be soldered to the PCB with a generous copper pour to achieve rated thermal performance and to provide a low-inductance source connection for high-di/dt switching. Keep the gate-drive loop as short as possible - place the gate resistor (10-100 ohm) within 5 mm of the gate pad - to minimize ringing and dv/dt-induced turn-on. The power-loop inductance between drain, FET, and output capacitor should be minimized by keeping these traces short and wide; consider using a stripline or coplanar waveguide layout for high-current paths above 30A.
Drive the gate with a 10V rail for full enhancement; the OptiMOS 5 process is specified at VGS=10V for the headline 0.86 mOhm RDS(on). Below 4.5V VGS the part may not fully enhance, leading to hot-RDS(on) runaway. Use a low-impedance gate driver (1-2 ohm source/sink capability) for fast switching; pair with a gate-source resistor (typically 10-100 kohm) to prevent floating-gate turn-on during system transients. For half-bridge configurations, use a properly-designed bootstrap or isolated gate driver such as the 2EDL8033G4CXTMA1 or IR2304SPBF.
Informations de conformité
RoHS and REACH compliance inferred from Infineon OptiMOS 5 product family datasheets. AEC-Q100 status not stated in verified distributor listings - the ATMA1 suffix is industrial-grade. For AEC-Q100 qualified versions, look at Infineon's automotive part number scheme.
