MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron
Référence : MT40A512M8RH-083E ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.08 | $5,08 |
| 10 | $4.7 | $47,00 |
| 100 | $4.3 | $430,00 |
| 500 | $3.95 | $1 975,00 |
| 1 000 | $3.6 | $3 600,00 |
| 3 000 | $3.3 | $9 900,00 |
MT40A512M8RH-083E Présentation
A DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both edges of the clock (double data rate), sitting within the memory hierarchy as DRAM component -> DDR SDRAM family -> main system memory. Compared with DDR3, DDR4 lowers the core supply to 1.2V, increases the internal bank count, and adds bank groups for higher effective bandwidth. The MT40A512M8RH-083E implements 8 internal banks arranged as 2 groups of 4 banks each, with an 8n-bit prefetch architecture that lets the internal array run slower while the I/O sustains 2400 MT/s.
Key features include programmable data strobe preambles, on-die internal adjustable VREFDQ generation that eliminates external reference resistors, a 1.2V pseudo open-drain I/O structure that reduces I/O power, and a 64ms, 8192-cycle refresh interval for operation up to 95C. The FBGA code for this device is D9TGG, which is useful for identifying marking codes on delivered parts.
The 83E speed bin corresponds to the DDR4-2400 industry speed grade with CAS latency options defined in the Micron 4Gb x4/x8/x16 DDR4 datasheet (365 pages), which should be consulted for exact tCK, CL, and tRCD timing tables. Typical applications include desktop and notebook DIMMs, embedded and industrial x86/ARM systems, networking line cards, and test equipment main memory, where a 4Gb x8 component provides a balanced capacity-per-rank and bus-width trade-off.
Design considerations: DDR4 routing requires length-matched, on-end ODT-tuned fly-by topologies, and VPP must be present at power-up for the pump circuits. Verify termination (RTT_NOM/RTT_WR) settings against your memory controller's training capability.
This page adds value beyond the datasheet by consolidating distributor pricing, drop-in family alternatives, application guidance, and an engineer-oriented FAQ in one place.
Alternatives de remplacement direct pour MT40A512M8RH-083E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT40A512M8RH-083E (même facteur de forme et même empreinte) — différant par Package, Refresh, Data Rate, Interface, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT40A512M8RH-083E IT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A512M8RH-083E AIT:B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A512M8RH-075E:B
✅ Remplacement direct✓ En stock
$2.15 / unité
Voir la fiche technique →MT40A512M8RH-083E-IT
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT40A512M8RH-083E Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 4 Gbit |
| Organisation de la mémoire | 512M x 8 |
| Industry Speed Grade | DDR4-2400 |
| Clock Rate | 1.2 GHz |
| Internal Banks | 8 banks (2 groups of 4) |
| Prefetch | 8n-bit |
| Refresh | 64 ms, 8192-cycle refresh (to 95C) |
| VDD / VDDQ | 1.2 V +/-60 mV |
| VPP | 2.5 V, -125 mV/+250 mV |
| I/O Structure | 1.2 V pseudo open-drain |
| VREFDQ | On-die internal, adjustable generation |
| Température de fonctionnement | 0C to +95C |
| Boîtier | 78-ball FBGA (9 x 10.5 mm) |
| FBGA Code | D9TGG |
| Marking Code | D9TGG |
| Data Strobe Preamble | Programmable |
| Statut RoHS | Compliant |
Guide de configuration des broches du MT40A512M8RH-083E 78-ball fbga (9 x 10.5 mm)
Configuration des broches du MT40A512M8RH-083E (boîtier 78-ball fbga (9 x 10.5 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour MT40A512M8RH-083E.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT40A512M8RH-083E convient pour 6 applications: Desktop and Notebook Main Memory (UDIMM/SO-DIMM), Industrial Embedded Controllers, Networking Line Cards and Switches, Automotive Infotainment and Telematics, Test and Measurement Instruments, Edge AI and Smart Camera Modules.
Desktop and Notebook Main Memory (UDIMM/SO-DIMM)
The MT40A512M8RH-083E is a mainstream building block for consumer PC memory modules. Its 4Gb density in a x8 organization allows eight devices to populate a 64-bit module channel, yielding 4GB per rank with a single rank - ideal for SO-DIMMs in thin notebooks where PCB area and power are constrained. The 1.2V pseudo open-drain I/O reduces module idle power versus DDR3, and the DDR4-2400 speed grade matches most desktop and mobile memory controller defaults. On-die VREFDQ generation removes external reference circuitry from the module design. Designers should follow JEDEC module topology rules for fly-by address/command routing and per-DIMM termination (RTT_NOM/RTT_WR) settings, and verify SPD contents programmed to the module EEPROM match the 083E timing table in the Micron datasheet.
Recommandé
Industrial Embedded Controllers
Industrial x86 and ARM controllers frequently specify soldered-down 4Gb DDR4 x8 components operating from 0C to +95C, which the -083E bin supports directly. The part's on-die adjustable VREFDQ reduces board component count in compact industrial controllers, and the 8-bank/2-group architecture sustains DDR4-2400 bandwidth for machine vision preprocessing, protocol stacks, and logging buffers. For enclosures that can drop below 0C, the footprint-identical MT40A512M8RH-083E IT:B (-40C to +95C) should be substituted at design time. Because DRAM retention and timing margins degrade near the temperature ceiling, designers should enable DDR4 temperature-compensated refresh and derate clock speed if Tcase approaches 95C. Memory training must be re-run whenever the vendor or speed bin changes on an existing platform.
Recommandé
Networking Line Cards and Switches
Enterprise switches, routers, and NICs use DDR4 components for packet buffers, flow tables, and control-plane memory. The MT40A512M8RH-083E's 512M x 8 organization provides deep byte-addressable buffers that pair well with network processors and switch ASICs requiring x8 memory channels, and the DDR4-2400 rate supplies 19.2 GB/s peak bandwidth per 64-bit channel. The 78-ball FBGA (9 x 10.5 mm) suits high-density line-card layouts with multiple devices per rank. For telecom temperature ranges, the IT variant covers -40C to +95C. Designers must respect the 64ms/8192-cycle refresh requirement (tightened near 95C) since refresh stalls can affect worst-case packet latency, and should enable programmable strobe preambles to improve margins on long, heavily loaded fly-by buses typical of line cards.
Recommandé
Automotive Infotainment and Telematics
Automotive IVI head units and telematics gateways demand DDR4 bandwidth for map rendering, media decode, and connectivity stacks. Micron provides automotive x8 DDR4 variants in this density (FBGA code D9TGX, IT temperature rating -40C to +95C) with product longevity commitments, and the standard commercial -083E is electrically identical for development boards and non-safety domains. The 4Gb x8 configuration lets a SoC with a 32-bit memory interface reach 2GB using eight devices, balancing bandwidth and board cost. Designers must account for under-hood thermal profiles: use the automotive/IT variant for production, place devices away from hot spots, and implement temperature-sensor-driven refresh control. AEC-style qualification documentation should be requested from Micron for production automotive programs rather than assuming it from the standard part.
Recommandé
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and arbitrary waveform generators use deep capture memory to buffer acquisition data. DDR4 components such as the MT40A512M8RH-083E provide low-cost per-gigabit buffering: a 64-bit-wide array of eight devices delivers 4GB and 19.2 GB/s peak bandwidth, sufficient to stream acquisition data away from the front-end at sustained rates when access patterns avoid bank conflicts. The x8 organization simplifies ECC implementation, which many instruments require for data integrity in long captures. Since instruments often idle at high temperatures in racks, thermal design should keep case temperature well below the 95C limit to preserve timing margins, and designers should exploit programmable strobe preambles for reliable training on long capture-bus traces. The 2.5V VPP rail needs its own low-noise supply regulator.
Recommandé
Edge AI and Smart Camera Modules
Edge AI accelerators and smart cameras buffer frame data and neural network weights in DDR4. The MT40A512M8RH-083E offers 4Gb per device, and four devices on a 32-bit bus give 2GB at 9.6 GB/s - adequate for 1080p multi-stream inference pipelines with quantized models. Its 1.2V I/O lowers total memory power, directly improving thermal budgets in fanless camera housings, and on-die VREFDQ simplifies the compact power tree typical of camera modules. The 0C to +95C range covers most outdoor enclosures with passive cooling; for extreme cold, swap to the IT:B variant with no footprint change. Designers should place the FBGA devices close to the SoC, length-match DQS/DQ within the datasheet tolerance, and reserve solder-down land patterns compatible with both x8 and x16 siblings to preserve sourcing flexibility.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT40A512M8RH-083E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT40A512M8RH-083E IT:B | MT40A512M8RH-083E AIT:B | MT40A512M8RH-075E |
|---|---|---|---|---|
| Package | 78-FBGA (9 x 10.5 mm) | 78-FBGA (9 x 10.5 mm) - same | 78-FBGA (9 x 10.5 mm) - same | 78-FBGA (9 x 10.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density / Organization | 4 Gbit, 512M x 8 | 4 Gbit, 512M x 8 | 4 Gbit, 512M x 8 | 4 Gbit, 512M x 8 |
| Speed Grade | DDR4-2400 (083E) | DDR4-2400 (083E) | DDR4-2400 (083E) | DDR4-2666 class (075E) |
| VDD / VDDQ | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV |
| Operating Temperature | 0C to +95C | -40C to +95C | Automotive temperature range (-40C to +95C) | 0C to +95C |
| Refresh | 64 ms, 8192-cycle (to 95C) | 64 ms, 8192-cycle (to 95C) | 64 ms, 8192-cycle (to 95C) | 64 ms, 8192-cycle (to 95C) |
Principaux différenciateurs
- Commercial temperature cost advantage (vs MT40A512M8RH-083E IT:B)
- Product longevity for long-lifecycle programs (vs MT40A512M8RH-083E)
- Headroom for platform upgrades (vs MT40A512M8RH-075E)
Notes de conception
The MT40A512M8RH-083E requires three supply domains: VDD/VDDQ at 1.2V +/-60mV and VPP at 2.5V (-125mV/+250mV). VPP must be present during power-up because it drives internal charge pumps; sequencing VDD before VPP or leaving VPP floating can cause undefined states. Budget I/O termination current separately - pseudo open-drain I/O sinks current only on logic-low drives, so rail loading depends on data patterns. Estimated: a single x8 device at DDR4-2400 typically draws on the order of several hundred mW active; verify against the datasheet IDD table for your access pattern rather than using a single number.
DDR4 x8 solder-down layouts use fly-by routing for address/command with DQS-DQ length matching within package skew plus trace tolerance per the Micron 4Gb datasheet tables. Keep the 78-ball FBGA land pattern per the datasheet ball map for the x8 configuration; do not copy x4 or x16 footprints - the ball functions differ. Route DQ/DQS as tightly coupled pairs with solid reference planes, and place the series damping topology recommended in Micron DDR4 design guides (TN-family application notes on DDR4 board design) at the controller rather than per device when multiple ranks share the bus.
Three recurring mistakes with DDR4-2400 components: (1) treating the part as DDR3-pin-compatible - the ball map, 1.2V supply, and VPP requirement make DDR3 layouts unusable; (2) ignoring the 95C refresh boundary - beyond 85C the required refresh rate doubles (tREFI halves), and controllers without temperature-compensated refresh will corrupt data near 95C; (3) skipping memory training after substituting speed bins - an MT40A512M8RH-075E can replace the -083E, but the controller must be retrained, and the reverse substitution will fail at DDR4-2666 targets. Verify FBGA marking code D9TGG on received parts to detect counterfeit or remarked devices.
Informations de conformité
RoHS compliance and lead-free construction are standard for Micron DDR4 components; AEC-Q100 applies to the automotive IT/AIT variant documentation rather than the standard commercial part. Verify REACH and conflict minerals declarations via Micron's official product compliance portal.
