MT53E768M32D4DT-053 - 24Gbit LPDDR4 4266Mbps x32 | Micron
Référence : MT53E768M32D4DT-053 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $48.5 | $48,50 |
| 10 | $45.2 | $452,00 |
| 100 | $42.1 | $4 210,00 |
| 500 | $39.8 | $19 900,00 |
| 1 000 | $37.5 | $37 500,00 |
MT53E768M32D4DT-053 Présentation
LPDDR4 (Low Power Double Data Rate 4) is a JEDEC-defined synchronous DRAM interface standard optimized for mobile and low-power computing. Within the memory hierarchy, it sits below DDR4 server memory in absolute bandwidth but delivers superior performance-per-watt, lower operating voltage (VDDQ = 1.1 V), and a smaller ball pitch, making it the dominant DRAM type for battery-powered SoC platforms.
Key features include 24Gbit density in a single component, 32-bit data width, 1.866 GHz maximum clock, low-voltage 1.1 V I/O signaling, and Micron's quad-die package construction that stacks four 6Gbit dice to achieve density without enlarging the footprint. Temperature-grade suffix options (WT commercial, AIT industrial, AUT automotive) let designers qualify one layout across multiple environments.
The LPDDR4 architecture uses bank-group based 8n prefetch, on-die termination, and DBI (data bus inversion) to reduce power and improve signal integrity at 4266 Mbps. DPD (deep power down) and self-refresh modes minimize standby current in always-on mobile designs. The -053 speed grade supports the highest LPDDR4 bin, enabling full-rate operation with flagship SoCs.
Typical applications include smartphone and tablet application processor memory, automotive infotainment and ADAS domain controllers, networking appliances, and industrial HMI platforms where 3GB of DRAM in a compact 10 x 14.5 mm VFBGA is required.
When designing with this part, follow JEDEC LPDDR4 routing practice: length-match the 32-bit data bus, use on-die termination settings from the mode register programming guide, and verify ZQ calibration resistor placement per the Micron datasheet.
This page synthesizes verified distributor listings, drop-in speed/temp-grade alternatives, and practical design notes not found in the manufacturer part catalog.
Alternatives de remplacement direct pour MT53E768M32D4DT-053 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT53E768M32D4DT-053 (même facteur de forme et même empreinte) — différant par Memory Type, Organization, Mounting Type, Package, Clock Frequency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT53E768M32D4DT-046
✅ Remplacement direct✓ En stock
$18.25 / unité
Voir la fiche technique →MT53E768M32D4DT-053 AIT:E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53E768M32D4DT-053 WT:E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53E768M32D4DT-053 AUT:E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT53E2G32D4DE-046 AUT:C
✅ Remplacement direct✓ En stock
$31.5 / unité
Voir la fiche technique →MT53E768M32D4DT-053 Spécifications
| Type de mémoire | Mobile LPDDR4 SDRAM (LPDRAM) |
| Density | 24 Gbit (3 GB) |
| Organisation de la mémoire | 768M x32 |
| Clock Frequency | 1.866 GHz max |
| Débit de données | 4266 Mbps/pin |
| Interface | LPDDR4 (JEDEC) |
| Largeur du bus de données | 32 bit |
| Boîtier | 200-VFBGA (10 x 14.5 mm) |
| Die Configuration | Quad-die package (QDP) |
| Type de montage | Surface Mount |
| Speed Grade | -053 |
| Temperature Grade Options | WT (commercial), AIT (industrial), AUT (automotive) |
Guide de configuration des broches du MT53E768M32D4DT-053 200-vfbga (10 x 14.5 mm)
Configuration des broches du MT53E768M32D4DT-053 (boîtier 200-vfbga (10 x 14.5 mm)). La numérotation des broches, les fonctions et les schémas de connexion sont définis dans la fiche technique du fabricant. Consultez-la pour l'empreinte exacte et les directives de soudage.
Aucune donnée de brochage détaillée disponible pour MT53E768M32D4DT-053.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
MT53E768M32D4DT-053 convient pour 6 applications: Smartphone and Tablet Main Memory, Automotive Infotainment and ADAS Domain Controllers, Networking and Edge Compute Appliances, Industrial HMI and Vision Systems, Test and Measurement Instrumentation, AIoT and Smart Camera Hubs.
Smartphone and Tablet Main Memory
The MT53E768M32D4DT-053 is purpose-built as the main DRAM for flagship smartphone and tablet SoCs, where its 24Gbit density provides 3GB per component and its 1.866 GHz / 4266 Mbps/pin interface delivers the bandwidth modern mobile application processors demand. The 32-bit LPDDR4 bus minimizes controller channel count while the quad-die package stacks four dice in the 10 x 14.5 mm VFBGA, keeping the memory footprint small enough for thin handset PCBs. Placed on the SoC's dedicated LPDDR4 channel with length-matched fly-by routing and 1.1 V-class VDDQ rails, the part operates at full LPDDR4 speed bins; deep power down and self-refresh modes minimize standby drain on the battery during always-on workloads such as notification sync and voice-assistant wake-word detection.
Recommandé
Automotive Infotainment and ADAS Domain Controllers
Automotive cockpit SoCs and ADAS domain controllers need multi-gigabyte DRAM with automotive-grade qualification, and the MT53E768M32D4DT-053 AUT:E variant addresses exactly this: the same 24Gbit 768M x32 core and 200-ball VFBGA (10 x 14.5 mm) package as the commercial part, but screened to Micron's automotive temperature grade. At 4266 Mbps/pin the 32-bit interface supplies the sustained bandwidth required for navigation rendering, camera-buffer processing, and rear-seat video. The LPDDR4 interface's on-die termination and DBI support maintain signal integrity across the wide automotive temperature range, while self-refresh preserves camera frame buffers during low-power parked states. Designers should validate mode-register programming and thermal dissipation against the specific SoC's reference design before release.
Recommandé
Networking and Edge Compute Appliances
Edge routers, SD-WAN appliances, and network-attached processing cards require large packet buffers and application working sets, which the MT53E768M32D4DT-053's 3GB capacity serves in a compact 200-ball VFBGA (10 x 14.5 mm) footprint. Running at 1.866 GHz, its 32-bit LPDDR4 interface sustains approximately 17 GB/s of peak bandwidth, sufficient for line-rate packet processing on multi-gigabit ports when paired with an LPDDR4-capable network processor or SoC. The industrial AIT:E grade covers extended ambient temperatures typical of fanless edge enclosures. Because LPDDR4 consumes less power than DDR4 UDIMM solutions, system thermal budgets improve - a key benefit in sealed enclosures. Designers must implement proper termination calibration (ZQ) and follow the memory controller's training sequence per Micron's mode-register guidance.
Recommandé
Industrial HMI and Vision Systems
Industrial human-machine interfaces and machine-vision controllers benefit from the MT53E768M32D4DT-053's combination of density and bandwidth: 3GB of LPDDR4 at up to 4266 Mbps/pin buffers multi-camera image streams and graphical frame stores without external DDR routing complexity. The AIT:E industrial grade is screened for extended factory-floor temperatures, and the 10 x 14.5 mm 200-ball VFBGA package keeps the memory footprint small on dense SOM or COM modules. The quad-die package (QDP) construction maximizes density per component, reducing BOM line items versus multiple lower-density parts. Compared with DDR3/DDR4 solutions, the LPDDR4 interface's lower I/O voltage reduces overall system power - beneficial for fanless passively cooled industrial panels where every watt affects enclosure design and long-term component reliability.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, protocol analyzers, and signal generators need deep acquisition memory, and the MT53E768M32D4DT-053's 24Gbit capacity provides 3GB of capture buffer per component at full 1.866 GHz / 4266 Mbps/pin bandwidth for real-time streaming from acquisition ASICs. The 200-ball VFBGA (10 x 14.5 mm) package supports dense instrument mainboards, and multiple components can be ganged on independent 32-bit channels for multi-terabit capture depth. Low standby current via self-refresh and deep power down supports the fast standby/resume cycles bench instruments demand. Because instruments operate in controlled laboratory temperatures, the commercial WT:E grade is typically sufficient, reducing cost versus industrial screening. Designers should verify write-leveling and read-training margins at 4266 Mbps with their memory controller IP before board release.
Recommandé
AIoT and Smart Camera Hubs
Smart cameras, video doorbells, and AIoT edge hubs with on-device inference need DRAM capacity for neural-network activation buffers plus video frame rings - a fit for the MT53E768M32D4DT-053's 3GB at 4266 Mbps/pin on a 32-bit LPDDR4 bus. The 10 x 14.5 mm 200-ball VFBGA package suits compact camera module boards, while LPDDR4's low I/O voltage keeps total power within passive thermal limits of outdoor enclosures. Self-refresh mode preserves the frame buffer while the NPU idles between events, cutting average power dramatically in battery- or PoE-powered designs. The WT:E commercial grade suits consumer smart-home SKUs, whereas the AIT:E grade covers outdoor extended-temperature deployments. Verify the SoC's LPDDR4 training supports quad-die package rank configuration per Micron's datasheet before layout freeze.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT53E768M32D4DT-053 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT53E768M32D4DT-046 | MT53E768M32D4DT-053 AIT:E | MT53E768M32D4DT-053 AUT:E | MT53E2G32D4DE-046 |
|---|---|---|---|---|---|
| Package | 200-VFBGA (10 x 14.5 mm) | 200-VFBGA (10 x 14.5 mm) - same | 200-VFBGA (10 x 14.5 mm) - same | 200-VFBGA (10 x 14.5 mm) - same | 200-VFBGA - same ball count family |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 24 Gbit (3 GB) | 24 Gbit (3 GB) | 24 Gbit (3 GB) | 24 Gbit (3 GB) | Different density family variant |
| Organization | 768M x32 | 768M x32 | 768M x32 | 768M x32 | x32 (different capacity) |
| Max Clock / Data Rate | 1.866 GHz / 4266 Mbps per pin | -046 speed grade (lower bin) | 1.866 GHz / 4266 Mbps | 1.866 GHz / 4266 Mbps | -046 speed grade (lower bin) |
| Memory Interface | LPDDR4 (JEDEC) | LPDDR4 | LPDDR4 | LPDDR4 | LPDDR4 |
Principaux différenciateurs
- Highest LPDDR4 speed bin (-053) (vs MT53E768M32D4DT-046)
- Automotive screening option on same die (vs MT53E768M32D4DT-053 WT:E)
- 24Gbit in a single component via QDP (vs MT53E2G32D4DE-046)
Notes de conception
At 4266 Mbps/pin, the LPDDR4 data bus leaves very little timing margin. Length-match each DQ group to its DQS pair within the skew budget in the Micron datasheet, keep single-ended trace impedance near the JEDEC LPDDR4 target, and reference data lines to a continuous ground plane. Avoid routing DQ/DQS across plane splits, and simulate the longest and shortest byte lanes with IBIS models from Micron before tape-out.
LPDDR4 uses separate VDD1 (core) and VDDQ (I/O) rails with tight ripple requirements. Use a PMIC LPDDR4 rail or dedicated buck converters with output ceramic capacitance placed at the VFBGA ball field, and follow the power-up sequence order specified in the Micron datasheet to avoid latch-up or excess leakage. Include the ZQ calibration resistor with short, low-inductance routing to its ball as specified in the datasheet reference design.
The quad-die package (QDP) presents channel/rank configuration that memory-controller training must handle; verify your SoC supports QDP x32 parts of this density before committing to the MT53E768M32D4DT-053. Also note the suffix letter (WT/AIT/AUT) encodes temperature grade - ordering the wrong grade for an automotive or industrial program forces a re-qualification. Confirm reel vs tray packing codes at RFQ time.
Informations de conformité
Micron part suffix E typically denotes lead-free/RoHS-status packaging per Micron ordering nomenclature, but explicit compliance status was not stated in the verified web data; confirm on Micron's product page or datasheet.
