MT8LSDT1664AG10E - 128MB PC100 SDRAM DIMM | Micron
Référence : MT8LSDT1664AG10E ✗ Fin de vie| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $28.41 | $28,41 |
| 10 | $26.5 | $265,00 |
| 50 | $24 | $1 200,00 |
| 100 | $21.75 | $2 175,00 |
| 500 | $19.5 | $9 750,00 |
MT8LSDT1664AG10E Présentation
A SDRAM (Synchronous Dynamic Random-Access Memory) module is a type of volatile memory that synchronizes data transfers with the system clock, allowing burst-mode reads and writes at one operation per clock cycle. SDRAM DIMMs sit at the base of the PC memory hierarchy (registers/cache → DRAM → storage), and unbuffered (UDIMM) variants like the MT8LSDT1664AG10E are intended for desktops and workstations where the chipset drives the address/command bus directly without a register buffer. This Micron part is part of the legacy MT8LSDT1664A/MT16LSDT3264A DIMM family that defined the PC100/PC133 era.
Key features of the MT8LSDT1664AG10E include a 6 ns access time (the "-10E" speed grade), CL2 CAS Latency support at 100 MHz, gold edge-finger contacts (the "G" suffix), operation from 0°C to +70°C (commercial temperature range), fully synchronous operation with all signals referenced to the rising clock edge, and JEDEC-standard pinout that allows drop-in replacement across compliant 168-pin UDIMM sockets. The 168-pin DIMM format uses a 64-bit data bus without ECC, which matches the bandwidth requirements of the Intel 440BX, VIA Apollo Pro, and SiS 630/633 chipset families.
Typical applications for the MT8LSDT1664AG10E include legacy desktop PC memory upgrades, industrial single-board computer main memory, factory-floor PC/104 systems, test-and-measurement instrumentation that requires PC-compatible memory, refurbished legacy server base memory, and older point-of-sale terminals. The unbuffered, non-ECC organization makes it unsuitable for registered ECC server platforms; for those systems, the MT9LSDT1672AG (registered, ECC) variant is the recommended replacement.
When designing or servicing with this module, observe the JEDEC initialization sequence: hold CKE low, apply stable VDD/VDDQ simultaneously, wait 100 µs, then issue a PRECHARGE-ALL and two AUTO-REFRESH commands before normal operation. Mixed-speed modules in the same bank may force the system to the slowest CAS latency, so populate banks with matched speed grades where possible. The module has reached end-of-life from Micron and is now sourced primarily through the secondary/aftermarket channel.
For procurement, verify the full Micron datasheet and confirm the exact speed grade (-10E = 6 ns / 100 MHz CL2) and the gold-finger ("G") contact option. Note that the MT8LSDT1664AG10EE1 variant adds an additional testing/qualification suffix; the -10E base part is the canonical PC100 128 MB reference. This page synthesizes distributor availability, drop-in alternatives, and practical legacy-DIMM design notes not found in the standalone manufacturer datasheet.
Alternatives de remplacement direct pour MT8LSDT1664AG10E — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT8LSDT1664AG10EE1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT8LSDT1664AG-8E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT8LSDT1664A-10E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT16LSDT3264AG10E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT16LSDT3264AG-8E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT4LSDT1664AG10E
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
MT8LSDT1664AG10E Valeurs maximales et caractéristiques électriques
| Type de mémoire | SDRAM (Synchronous DRAM) |
| Module Format | 168-pin UDIMM (Unbuffered DIMM) |
| Capacity | 128 MB (16 Meg x 64) |
| Organisation de la mémoire | 16M x 64 (non-ECC, unbuffered) |
| Speed Grade | -10E (6 ns access time, PC100 CL2) |
| Largeur du bus de données | 64 bits (x64) |
| Clock Frequency | 100 MHz (PC100); 125-133 MHz PC133 capable components |
| Latence CAS | CL2 |
| Tension d'alimentation | +3.3V ±0.3V |
| Température de fonctionnement | 0°C to +70°C (commercial) |
| Edge-Finger Plating | Gold (G suffix) |
| Compliance | JEDEC PC100 and PC133 standards |
| Refresh | Auto-Refresh, 64 ms / 8K cycles |
| Power-up Initialization | 100 µs pause + 2 AUTO REFRESH commands (per datasheet) |
| Statut RoHS | unknown |
| Package Outline | 168-pin DIMM, 133.35 mm x 4.00 mm nominal |
Configuration des broches de MT8LSDT1664AG10E
| Broche 1 | VSS — Ground |
| Broche 2 | DQ0 — Data line 0 |
| Broche 3 | DQ1 — Data line 1 |
| Broche 4 | DQ2 — Data line 2 |
| Broche 5 | DQ3 — Data line 3 |
| Broche 6 | DQ4 — Data line 4 |
| Broche 7 | DQ5 — Data line 5 |
| Broche 8 | DQ6 — Data line 6 |
| Broche 9 | DQ7 — Data line 7 |
| Broche 10 | VSS — Ground |
| Broche 11 | DQ8 — Data line 8 |
| Broche 12 | DQ9 — Data line 9 |
| Broche 13 | DQ10 — Data line 10 |
| Broche 14 | DQ11 — Data line 11 |
| Broche 15 | DQ12 — Data line 12 |
| Broche 16 | DQ13 — Data line 13 |
| Broche 17 | DQ14 — Data line 14 |
| Broche 18 | DQ15 — Data line 15 |
| Broche 19 | VSS — Ground |
| Broche 20 | DQ16 — Data line 16 |
| Broche 21 | DQ17 — Data line 17 |
| Broche 22 | DQ18 — Data line 18 |
| Broche 23 | DQ19 — Data line 19 |
| Broche 24 | DQ20 — Data line 20 |
| Broche 25 | DQ21 — Data line 21 |
| Broche 26 | DQ22 — Data line 22 |
| Broche 27 | DQ23 — Data line 23 |
| Broche 28 | VSS — Ground |
| Broche 29 | DQ24 — Data line 24 |
| Broche 30 | DQ25 — Data line 25 |
| Broche 31 | DQ26 — Data line 26 |
| Broche 32 | DQ27 — Data line 27 |
| Broche 33 | DQ28 — Data line 28 |
| Broche 34 | DQ29 — Data line 29 |
| Broche 35 | DQ30 — Data line 30 |
| Broche 36 | DQ31 — Data line 31 |
| Broche 37 | VSS — Ground |
| Broche 38 | DQ32 — Data line 32 |
| Broche 39 | DQ33 — Data line 33 |
| Broche 40 | DQ34 — Data line 34 |
| Broche 41 | DQ35 — Data line 35 |
| Broche 42 | DQ36 — Data line 36 |
| Broche 43 | DQ37 — Data line 37 |
| Broche 44 | DQ38 — Data line 38 |
| Broche 45 | DQ39 — Data line 39 |
| Broche 46 | VSS — Ground |
| Broche 47 | DQ40 — Data line 40 |
| Broche 48 | DQ41 — Data line 41 |
| Broche 49 | DQ42 — Data line 42 |
| Broche 50 | DQ43 — Data line 43 |
| Broche 51 | DQ44 — Data line 44 |
| Broche 52 | DQ45 — Data line 45 |
| Broche 53 | DQ46 — Data line 46 |
| Broche 54 | DQ47 — Data line 47 |
| Broche 55 | VSS — Ground |
| Broche 56 | DQ48 — Data line 48 |
| Broche 57 | DQ49 — Data line 49 |
| Broche 58 | DQ50 — Data line 50 |
| Broche 59 | DQ51 — Data line 51 |
| Broche 60 | DQ52 — Data line 52 |
| Broche 61 | DQ53 — Data line 53 |
| Broche 62 | DQ54 — Data line 54 |
| Broche 63 | DQ55 — Data line 55 |
| Broche 64 | VSS — Ground |
| Broche 65 | DQ56 — Data line 56 |
| Broche 66 | DQ57 — Data line 57 |
| Broche 67 | DQ58 — Data line 58 |
| Broche 68 | DQ59 — Data line 59 |
| Broche 69 | DQ60 — Data line 60 |
| Broche 70 | DQ61 — Data line 61 |
| Broche 71 | DQ62 — Data line 62 |
| Broche 72 | DQ63 — Data line 63 |
| Broche 73 | VSS — Ground |
| Broche 74 | CK0 — Clock signal 0 (positive) |
| Broche 75 | CK0# — Clock signal 0 (complementary) |
| Broche 76 | VSS — Ground |
| Broche 77 | NC — Not connected (per datasheet) |
| Broche 78 | NC — Not connected (per datasheet) |
| Broche 79 | NC — Not connected (per datasheet) |
| Broche 80 | NC — Not connected (per datasheet) |
| Broche 81 | WP — Write Protect (SPD EEPROM) |
| Broche 82 | SDA — SPD EEPROM I2C data |
| Broche 83 | SCL — SPD EEPROM I2C clock |
| Broche 84 | VDDSPD — SPD EEPROM supply voltage |
| Broche 85 | VDD — Power supply (+3.3V) |
| Broche 86 | VDD — Power supply (+3.3V) |
| Broche 87 | NC — Not connected (per datasheet) |
| Broche 88 | NC — Not connected (per datasheet) |
| Broche 89 | NC — Not connected (per datasheet) |
| Broche 90 | VSS — Ground |
| Broche 91 | NC — Not connected (per datasheet) |
| Broche 92 | NC — Not connected (per datasheet) |
| Broche 93 | NC — Not connected (per datasheet) |
| Broche 94 | NC — Not connected (per datasheet) |
| Broche 95 | NC — Not connected (per datasheet) |
| Broche 96 | NC — Not connected (per datasheet) |
| Broche 97 | NC — Not connected (per datasheet) |
| Broche 98 | NC — Not connected (per datasheet) |
| Broche 99 | A0 — Address line 0 |
| Broche 100 | A1 — Address line 1 |
| Broche 101 | A2 — Address line 2 |
| Broche 102 | A3 — Address line 3 |
| Broche 103 | A4 — Address line 4 |
| Broche 104 | A5 — Address line 5 |
| Broche 105 | A6 — Address line 6 |
| Broche 106 | A7 — Address line 7 |
| Broche 107 | A8 — Address line 8 |
| Broche 108 | A9 — Address line 9 |
| Broche 109 | A10 — Address line 10 |
| Broche 110 | A11 — Address line 11 |
| Broche 111 | A12 — Address line 12 |
| Broche 112 | BA0 — Bank Address 0 |
| Broche 113 | BA1 — Bank Address 1 |
| Broche 114 | VSS — Ground |
| Broche 115 | RAS# — Row Address Strobe (active low) |
| Broche 116 | VSS — Ground |
| Broche 117 | CAS# — Column Address Strobe (active low) |
| Broche 118 | VSS — Ground |
| Broche 119 | WE# — Write Enable (active low) |
| Broche 120 | VSS — Ground |
| Broche 121 | CS0# — Chip Select 0 (active low) |
| Broche 122 | CS1# — Chip Select 1 (active low, no device) |
| Broche 123 | NC — Not connected (per datasheet) |
| Broche 124 | NC — Not connected (per datasheet) |
| Broche 125 | VSS — Ground |
| Broche 126 | NC — Not connected (per datasheet) |
| Broche 127 | NC — Not connected (per datasheet) |
| Broche 128 | CKE0 — Clock Enable 0 |
| Broche 129 | CKE1 — Clock Enable 1 (no device) |
| Broche 130 | VDD — Power supply (+3.3V) |
| Broche 131 | VDD — Power supply (+3.3V) |
| Broche 132 | VDD — Power supply (+3.3V) |
| Broche 133 | VDD — Power supply (+3.3V) |
| Broche 134 | DQM0 — Data Mask 0 (bytes 0) |
| Broche 135 | DQM1 — Data Mask 1 (byte 1) |
| Broche 136 | DQM2 — Data Mask 2 (byte 2) |
| Broche 137 | DQM3 — Data Mask 3 (byte 3) |
| Broche 138 | DQM4 — Data Mask 4 (byte 4) |
| Broche 139 | DQM5 — Data Mask 5 (byte 5) |
| Broche 140 | DQM6 — Data Mask 6 (byte 6) |
| Broche 141 | DQM7 — Data Mask 7 (byte 7) |
| Broche 142 | VSS — Ground |
| Broche 143 | VDD — Power supply (+3.3V) |
| Broche 144 | VDD — Power supply (+3.3V) |
| Broche 145 | NC — Not connected (per datasheet) |
| Broche 146 | NC — Not connected (per datasheet) |
| Broche 147 | NC — Not connected (per datasheet) |
| Broche 148 | NC — Not connected (per datasheet) |
| Broche 149 | NC — Not connected (per datasheet) |
| Broche 150 | NC — Not connected (per datasheet) |
| Broche 151 | NC — Not connected (per datasheet) |
| Broche 152 | NC — Not connected (per datasheet) |
| Broche 153 | NC — Not connected (per datasheet) |
| Broche 154 | NC — Not connected (per datasheet) |
| Broche 155 | NC — Not connected (per datasheet) |
| Broche 156 | VDD — Power supply (+3.3V) |
| Broche 157 | NC — Not connected (per datasheet) |
| Broche 158 | NC — Not connected (per datasheet) |
| Broche 159 | NC — Not connected (per datasheet) |
| Broche 160 | NC — Not connected (per datasheet) |
| Broche 161 | NC — Not connected (per datasheet) |
| Broche 162 | NC — Not connected (per datasheet) |
| Broche 163 | VSS — Ground |
| Broche 164 | NC — Not connected (per datasheet) |
| Broche 165 | NC — Not connected (per datasheet) |
| Broche 166 | NC — Not connected (per datasheet) |
| Broche 167 | NC — Not connected (per datasheet) |
| Broche 168 | VSS — Ground |
Applications typiques
MT8LSDT1664AG10E convient pour 6 applications: Legacy Desktop PC Memory Upgrade, Industrial Single-Board Computer Main Memory, Refurbished Server Base Memory, Test & Measurement Instrumentation Main Memory, Point-of-Sale Terminal Memory, Network Appliance / Router Memory.
Legacy Desktop PC Memory Upgrade
The MT8LSDT1664AG10E was designed as the canonical 128 MB PC100 module for late-1990s desktop systems based on Intel 440BX, VIA Apollo Pro 133, and SiS 630/633 chipsets. Its 16M x 64 organization and 6 ns access time satisfy the JEDEC PC100 specification, providing the 800 MB/s peak bandwidth required for Pentium III and early Athlon platforms. The unbuffered, non-ECC architecture matches the chipset's expectation of a directly-driven address/command bus, making it a true drop-in for systems that originally shipped with 64–128 MB of main memory and need an upgrade to 256–512 MB total via two DIMM slots. Using a matched -10E module in pairs ensures both slots run at the 100 MHz CL2 timing the chipset configures at POST, avoiding any SPD-driven down-clock.
Recommandé
Industrial Single-Board Computer Main Memory
Long-life industrial SBCs and PC/104-Plus CPU boards from the late 1990s and early 2000s adopted the 168-pin UDIMM as their standard main-memory interface because it allowed field upgrades using commodity modules. The MT8LSDT1664AG10E's commercial 0–70°C range, JEDEC-standard pinout, and synchronous operation make it a reliable main-memory choice for factory-floor controllers, transportation ticketing machines, and kiosk PCs. The 64-bit data bus eliminates the need for parity logic on the host side, and the module's +3.3V supply matches the on-board regulators typical of those SBC designs. The gold-finger ('G') plating option improves corrosion resistance in mildly humid industrial enclosures compared with tin-only edge fingers.
Recommandé
Refurbished Server Base Memory
Refurbishers of legacy Pentium III and Pentium Pro servers frequently need low-density non-ECC UDIMMs to populate base memory configurations where the original equipment manufacturer shipped 128 MB or 256 MB base configurations. The MT8LSDT1664AG10E is well-suited to this role because it provides 128 MB per module, supports CAS Latency 2 at 100 MHz, and shares the 168-pin JEDEC footprint with all later PC100/PC133 modules. Note that registered or ECC memory is required for true server platforms (e.g., Intel 440GX, ServerWorks HE); the MT8LSDT1664AG10E is appropriate only for workstation-class systems with unbuffered memory controllers. Buying from authorized aftermarket distributors with full traceability is critical for refurbished-server use cases.
Recommandé
Test & Measurement Instrumentation Main Memory
PC-based oscilloscopes, logic analyzers, and data-acquisition systems from the late 1990s and early 2000s used desktop-class motherboards as their compute platform, and the MT8LSDT1664AG10E provided the main memory for these instruments. The 64-bit non-ECC bus width matched the data-path requirements of the ADC and DSP subsystems, while the 100 MHz synchronous interface provided enough headroom for waveform capture buffering and post-trigger analysis. For instruments that needed longer capture windows, pairing two MT8LSDT1664AG10E modules delivered 256 MB of contiguous memory without BIOS or chipset modifications. The module's mature JEDEC compliance simplified EMC and reliability qualification of the host instrument.
Recommandé
Point-of-Sale Terminal Memory
POS terminals of the late-1990s/early-2000s generation (such as those based on the NCR/IBM 745x or Radiant Systems P-series) frequently shipped with PC100 SDRAM UDIMMs as their main memory. The MT8LSDT1664AG10E's 128 MB capacity was sufficient for the embedded Windows NT/Windows CE POS software stack, including transaction databases, receipt rendering, and network stacks. The module's commercial 0–70°C temperature range matched the controlled-environment deployment of POS hardware in retail back-offices and checkout lanes. Its gold-finger plating helped mitigate intermittent failures in environments with higher humidity or mild contamination from paper dust and food particles.
Recommandé
Network Appliance / Router Memory
Mid-1990s network routers, firewall appliances, and SOHO NAS units based on x86 CPUs (such as early Intel/AMD-based SOHO routers) used 168-pin SDRAM UDIMMs as their main memory. The MT8LSDT1664AG10E provided 128 MB of low-latency working memory for routing tables, NAT state, and packet buffering on these platforms. The synchronous interface and PC100 timing delivered deterministic access times critical for line-rate packet processing, while the 3.3V supply aligned with the +5V/+3.3V power architecture common in early networking hardware. For OEMs needing longer field-life support, the MT8LSDT1664AG10E offered proven JEDEC compliance across many chipset generations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT8LSDT1664AG10E — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT8LSDT1664AG10EE1 | MT8LSDT1664AG-8E | MT8LSDT1664A-10E | MT16LSDT3264AG10E | MT16LSDT3264AG-8E | MT4LSDT1664AG10E |
|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 168-pin UDIMM | 168-pin UDIMM - same | 168-pin UDIMM - same | 168-pin UDIMM - same | 168-pin UDIMM - same | 168-pin UDIMM - same | 168-pin UDIMM - same |
| Capacity | 128 MB (16 Meg x 64) | 128 MB | 128 MB | 128 MB | 256 MB (+100%) | 256 MB (+100%) | 64 MB (-50%) |
| Speed Grade | -10E (6 ns, PC100 CL2) | -10E (same) | -8E (faster, PC133 capable) | -10E (same) | -10E (same) | -8E (faster) | -10E (same) |
| Edge-Finger Plating | Gold (G suffix) | Gold | Gold | Tin (no G) | Gold | Gold | Gold |
| Supply Voltage | +3.3V ±0.3V | +3.3V ±0.3V | +3.3V ±0.3V | +3.3V ±0.3V | +3.3V ±0.3V | +3.3V ±0.3V | +3.3V ±0.3V |
| Operating Temperature | 0°C to +70°C | 0°C to +70°C | 0°C to +70°C | 0°C to +70°C | 0°C to +70°C | 0°C to +70°C | 0°C to +70°C |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
Principaux différenciateurs
- Higher density on the same 168-pin UDIMM footprint (vs MT4LSDT1664AG10E (64 MB))
- Same Micron-quality timing at lower price tier than the -8E speed grade (vs MT8LSDT1664AG-8E (PC133))
- Drop-in 256 MB density upgrade option exists in the same family (vs MT16LSDT3264AG10E (256 MB))
Notes de conception
Per the Micron MT8LSDT1664A/MT16LSDT3264A datasheet, VDD and VDDQ must be powered up simultaneously to within ±0.3V of their nominal 3.3V value, and the device requires a 100 µs pause followed by a PRECHARGE-ALL and two AUTO-REFRESH commands before normal operation. Exceeding 3.6V on VDDQ permanently damages the SDRAM components; ensure host power-sequencing logic enforces monotonic VDD rise with no glitches above the JEDEC absolute-maximum rating.
The MT8LSDT1664AG10E is a non-ECC, unbuffered UDIMM and will not function in a registered memory socket (different keying, additional control lines, buffered address/command bus). For Pentium Pro/II/III server-class boards requiring registered or ECC memory, use the MT9LSDT1672AG family instead. Mixing -10E and -8E speed grades in the same bank typically forces the chipset to down-clock to the slower module's timing.
Sustained-impedance routing of DQ, DQM, address, and clock nets is required to keep reflections within JEDEC setup/hold windows at 100/133 MHz. Maintain a continuous ground reference under the DQ bus, place decoupling capacitors (0.1 µF ceramic + bulk) within 5 mm of each SDRAM component, and keep the CK/CK# pair matched within 20 ps to avoid double-clocking at PC133 timings. Always reference the Micron design guide section for trace-length matching on bidirectional buses.
Informations de conformité
PC100/PC133 SDRAM UDIMMs predate widespread RoHS compliance; specific compliance status for the MT8LSDT1664AG10E is not documented in the verified web data and should be confirmed with the distributor at the time of order.
