BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon
MPN: BSC010N04LSATMA1 ✓ פעילBSC010N04LSATMA1 סקירה
What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled semiconductor switch whose conduction channel is formed by electrons, giving it intrinsically lower on-resistance than equivalent P-channel devices at the same silicon area. Power MOSFETs sit in the broader discrete-semiconductor hierarchy alongside IGBTs, BJTs, and diodes, and they dominate applications below 250 V where their switching speed and low conduction loss are critical. Within synchronous rectification, two MOSFETs replace lossy Schottky diodes in the rectifier position to cut conduction loss, raise efficiency, and shrink thermal budgets in high-density converters.
Key features include a 40 V drain-source breakdown voltage (VDS max), 100 A continuous drain current (Tc), 1.0 mOhm maximum RDS(on) at VGS=10 V, logic-level VGS(th) of 2 V, and a SuperSO8 5x6 exposed-flange package that minimizes thermal resistance and maximizes current-handling density. The device also offers superior thermal performance with low RthJC for heat-sink-free operation in many 12 V bus applications, plus 100% avalanche rating that confirms robust transient handling.
On the architecture side, OptiMOS 5 uses Infineon's advanced trench-cell geometry to slash both conduction loss and switching loss simultaneously, yielding best-in-class FOM (Qg x RDS(on)). The SuperSO8 (PG-TDSON-8 FL) package integrates a large drain-tab thermal pad, enabling direct PCB cooling and high surge-current tolerance.
Typical applications include synchronous rectification in 12 V server and telecom DC-DC bus converters, secondary-side rectification in multi-phase VRM modules, OR-ing and hot-swap switches on 24 V industrial rails, motor-drive H-bridges for low-voltage BLDC motors, and battery protection MOSFETs in 4S-8S Li-ion packs where ultra-low RDS(on) is critical for runtime.
When designing with this part, ensure the gate-drive voltage reaches at least 4.5 V for full enhancement of RDS(on), and minimize stray source-inductance in the gate-drive loop to keep dV/dt-induced turn-on transients under control. Use a 10 kohm gate pull-down to keep the device off during controller start-up.
חלופות תחליף ישיר עבור BSC010N04LSATMA1 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם BSC010N04LSATMA1 (אותו גורם צורה וטביעת רגל) — שונים ב Package, Technology, Operating Temperature Range, MSL Level, Gate Threshold Voltage (VGS(th)).
BSC010N04LSIATMA1
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
BSC010N04LST
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
BSC014N04LSIATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←ISC015N04NM5ATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC019N04NSGATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC022N04LS6ATMA1
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←BSC010N04LSATMA1 דירוגים מרביים ומאפיינים חשמליים
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (VDS) | 40 V |
| Gate-Source Voltage (VGS) Max | +/- 20 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| Continuous Drain Current (ID, Ta=25C) | 38 A |
| On-Resistance RDS(on) Max @ VGS=10V | 1.0 mOhm |
| On-Resistance RDS(on) Test Condition | VGS = 10 V, ID = 50 A |
| Gate Threshold Voltage VGS(th) Typ | 2 V |
| Power Dissipation (Tc=25C) | 139 W |
| Power Dissipation (Ta=25C) | 2.5 W |
| טווח טמפרטורת פעולה | -55C to +150C |
| מארז | PG-TDSON-8 FL (SuperSO8 5x6) |
| סוג הרכבה | Surface Mount |
| רמת MSL | 1 |
| RoHS / Halogen-Free | RoHS compliant, halogen-free |
| Technology | OptiMOS 5 |
| Avalanche Rated | 100% avalanche tested |
| Manufacturer | Infineon Technologies |
תצורת פינים של BSC010N04LSATMA1
| פין 1 | Source (S) — Source connection, internally common with pins 2, 3, 5, 6, 7 |
| פין 2 | Source (S) — Source connection (low-side Kelvin return recommended) |
| פין 3 | Source (S) — Source connection |
| פין 4 | Gate (G) — Gate drive input; logic-level compatible, VGS(th) typ 2 V |
| פין 5 | Source (S) — Source connection |
| פין 6 | Source (S) — Source connection |
| פין 7 | Source (S) — Source connection |
| פין 8 | Drain (D) — Drain connection; also tied to exposed thermal pad on bottom of package |
אזור פעולה בטוח (DC, Tc=25C)
יישומים טיפוסיים
BSC010N04LSATMA1 מתאים עבור 6 יישוםs: 12V Synchronous Rectification in DC-DC Converters, Multi-Phase VRM for Server CPUs and GPUs, Battery Protection and OR-ing in 4S-8S Li-ion Packs, Industrial 24V Hot-Swap and OR-ing Switches, BLDC Motor Drive H-Bridge for Low-Voltage Motors, USB-PD and Fast-Charging Adapters.
12V Synchronous Rectification in DC-DC Converters
The BSC010N04LSATMA1 is the textbook choice for the low-side synchronous rectifier in 12 V buck and forward converters. Its 1.0 mOhm RDS(on) at VGS=10 V cuts conduction loss to under 1% of output power at 30 A, while the low Qg x RDS(on) figure-of-merit keeps switching loss small at 500 kHz - 1 MHz PWM. Placed on the secondary-side switching node with a 4.5 V or 10 V gate drive, it replaces lossy Schottky diodes and lifts overall converter efficiency to 96%+ in server and telecom VRM designs.
מומלץ
Multi-Phase VRM for Server CPUs and GPUs
In 4-phase to 8-phase VRMs powering server-class processors and discrete GPUs, the BSC010N04LSATMA1 serves as both the low-side synchronous rectifier and the high-side control FET in 12 V input stages. Its 100 A Tc rating supports 60 A per phase, and the SuperSO8 5x6 land pattern keeps the power loop inductance low when paired with bottom-side power stages. Across a typical 200 A VRM, using this FET in every slot cuts total conduction loss by 30-50% compared to 2-3 mOhm alternatives.
מומלץ
Battery Protection and OR-ing in 4S-8S Li-ion Packs
The BSC010N04LSATMA1's 1.0 mOhm RDS(on) makes it a high-efficiency protection and OR-ing switch in 4S to 8S Li-ion battery packs (12 V - 36 V nominal). Its 40 V VDS comfortably handles the highest end of the 8S charge range with safety margin, and the 100 A continuous rating suits high-power e-bike, power-tool, and small-EV applications. Mounted as back-to-back source-to-source with a second identical device, it provides bidirectional disconnect for BMS-controlled isolation.
מומלץ
Industrial 24V Hot-Swap and OR-ing Switches
In 24 V industrial bus systems and telecom -48 V OR-ing applications stepped down to 24 V rails, the BSC010N04LSATMA1's 40 V VDS gives ample transient headroom while the 100 A ID supports high-inrush load transients during board insertion. The avalanche-rated silicon absorbs energy from hot-plug events without damage. Used with a hot-swap controller and a sense resistor, it enables < 1 mOhm total path resistance for paralleled power modules.
מומלץ
BLDC Motor Drive H-Bridge for Low-Voltage Motors
For 12 V - 24 V BLDC motors in robotics, drones, and small-EV traction, the BSC010N04LSATMA1 fits as the low-side FET of each H-bridge leg. Its 100 A rating easily handles 30 A - 50 A peak motor currents, while the SuperSO8's low thermal resistance supports high PWM duty cycles without heatsinking. The 4.5 V VGS(th) compatibility lets it pair directly with 5 V gate drivers from common MCUs, simplifying integration in compact motor-control PCBs.
מומלץ
USB-PD and Fast-Charging Adapters
The BSC010N04LSATMA1 is well-suited to synchronous rectification in 65 W - 100 W USB Power Delivery adapters where 12 V - 20 V outputs at 5 A are common. Its 1.0 mOhm RDS(on) limits conduction loss to under 300 mW at full load, helping adapters meet stringent DOE Level VI and CoC Tier 2 efficiency targets. The SuperSO8 5x6 footprint fits dense flyback and active-clamp forward topologies with 100 W - 150 W power levels.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור BSC010N04LSATMA1 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | BSC010N04LSIATMA1 | BSC010N04LST | BSC014N04LSIATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|---|---|---|
| Package | SuperSO8 5x6 (PG-TDSON-8 FL) | SuperSO8 5x6 - same | SuperSO8 5x6 - same | SuperSO8 5x6 - same | SuperSO8 5x6 - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same |
| VDS Max | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) Max @ VGS=10V | 1.0 mOhm | 1.0 mOhm | 1.0 mOhm | 1.4 mOhm | 1.5 mOhm |
| VGS(th) Typ | 2 V | 2 V | 2 V | 2 V | 2 V |
| Technology / Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
מבדילים עיקריים
- Lowest RDS(on) in the 40 V SuperSO8 Infineon family at 1.0 mOhm (לעומתBSC014N04LSIATMA1)
- Higher continuous current rating (100 A Tc) than the '015' OptiMOS 5 sibling (לעומתISC015N04NM5ATMA1)
- 100% avalanche-tested ruggedness for transient hot-plug events (לעומתFDC600N04S (cross-package reference only))
הערות תכנון
The 139 W power dissipation rating for BSC010N04LSATMA1 is only achieved with the case held at 25C. On a real FR4 PCB the practical dissipation limit is set by the copper area connected to the SuperSO8 drain tab. Estimated: with 2 oz copper on a 1 square inch pad and 9 thermal vias, RthJA drops from ~62 C/W (minimum pad) to ~35 C/W; at 2 W dissipation the junction rises only 70C above ambient, supporting continuous 30 A loads without a heatsink.
Place the gate-drive return trace directly to the source pin (pin 1 or pin 4) rather than to the system ground plane. This Kelvin-source connection prevents the high di/dt drain-current transient from coupling into the gate-drive loop, which would otherwise cause parasitic turn-on and shoot-through. Estimated: with proper Kelvin routing the dV/dt immunity improves from <5 V/ns to >15 V/ns, eliminating the need for negative gate-drive bias in most 500 kHz designs.
Choose the gate-drive voltage based on the application's switching-frequency vs conduction-loss trade-off. At VGS=10 V the BSC010N04LSATMA1 operates at full 1.0 mOhm RDS(on) and is suited for 100 kHz - 1 MHz designs. At VGS=4.5 V the RDS(on) roughly doubles, raising conduction loss 2x; this is acceptable for sub-300 kHz designs where the lower gate-drive dissipation and simpler bootstrap-rail design outweigh the loss penalty.
Do not parallel two BSC010N04LSATMA1 devices without individual gate-source resistors (10 ohm - 100 ohm) on each gate. Despite identical lot-to-lot specs, threshold-voltage mismatch as low as 0.2 V can cause one device to take most of the current during turn-on, leading to thermal runaway. Individual gate resistors slow the di/dt, forcing the parallel pair to share current within 5% even with worst-case VGS(th) mismatch.
Use an aggressive thermal-via array directly under the SuperSO8 drain tab: a 4x4 array of 0.3 mm vias in 0.6 mm pitch, filled with copper and capped on both sides. Estimated: this via array cuts the PCB-to-bottom-side thermal resistance by ~40% compared to a single via, reducing RthJA from ~40 C/W to ~24 C/W on a 2 oz 4-layer board and lifting the practical continuous-current ceiling by 30% at the same temperature rise.
מידע על תאימות
RoHS compliant and halogen-free per Infineon OptiMOS 5 datasheet family. MSL1 rated per JEDEC J-STD-020. Not AEC-Q100 qualified - this part targets industrial and consumer power applications, not automotive.
