Infineon

BSC019N04NSGATMA1 - 40V 100A OptiMOS N-Ch MOSFET | Infineon

MPN: BSC019N04NSGATMA1 ✓ Active
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40 V Vdss 100 A Id 2.5 mΩ Rds(on) PG-TDSON-8-1 (TDSON-8 FL) Package
From $0.58 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $0.91 $0.91
10 $0.82 $8.20
100 $0.74 $74.00
500 $0.66 $330.00
1,000 $0.58 $580.00
ℹ️ All prices are in USD

Drop-in alternatives for BSC019N04NSGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

BSC014N04LSIATMA1

✅ Drop-In
Infineon
📦 PG-TDSON-8-1
N-Channel · OptiMOS 5 (trench, thin-wafer) · 40 V · 100 A · 31 A · [DATA_NEEDED: pulsed IDM rating] · 1.4 mOhm · [DATA_NEEDED: VGS absolute maximum]

✓ In Stock

$0.39 / Unit

View Datasheet →

BSC014N04LSATMA1

✅ Drop-In
📦 PG-TDSON-8-1
RDS(on) 1.4 mΩ typ vs 1.9 mΩ, same PG-TDSON-8-1 footprint, pin-to-pin compatible

📋 Reference alternative (not in catalog)

BSC022N04LS6ATMA1

✅ Drop-In ⚠️ 参数待验证
Infineon
📦 PG-TDSON-8-1
Infineon Technologies · OptiMOS™ 6 (N-channel trench) · 40 V · 27 A · 100 A · 139 A · 2.2 mOhm at VGS=10 V · 3 W

✓ In Stock

$0.66 / Unit

View Datasheet →

BSC0906NSATMA1

✅ Drop-In
Infineon
📦 PG-TDSON-8-1
N-Channel · 30 V · 18 A · 63 A · 2.5 W · 30 W · PG-TDSON-8-6 (SuperSO8, 5x6 mm) · Surface Mount

✓ In Stock

$0.48 / Unit

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BSC0902NSIATMA1

✅ Drop-In
Infineon
📦 PG-TDSON-8-1
Infineon Technologies · OptiMOS 30V · N-Channel · 30 V · [DATA_NEEDED: VGS max rating] · 23 A · 100 A · [DATA_NEEDED: IDM]

✓ In Stock

$0.32 / Unit

View Datasheet →

BSC0901NSATMA1

✅ Drop-In
Infineon
📦 PG-TDSON-8-1
Infineon Technologies · OptiMOS 30V · N-Channel Trench MOSFET (OptiMOS) · 30 V · 100 A · 28 A · 1.9 mOhm · [DATA_NEEDED: RDS(on) typical]

✓ In Stock

$0.78 / Unit

View Datasheet →

BSC019N04NSGATMA1 Maximum Ratings & Electrical Characteristics

Transistor Type N-Channel MOSFET
Technology OptiMOS (trench)
Drain-Source Voltage (VDS) 40 V
Continuous Drain Current (ID) at TC=25C 100 A
Continuous Drain Current (ID) at TA=25C 30 A
RDS(on) max at VGS=10V 2.5 mΩ
RDS(on) typ at VGS=10V 1.9 mΩ
Power Dissipation (PD) at TA=25C 2.5 W
Power Dissipation (PD) at TC=25C 125 W
Operating Temperature Range -55C to +150C
Package PG-TDSON-8-1 (TDSON-8 FL)
Mounting Type Surface Mount
RoHS Status Compliant

BSC019N04NSGATMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 Source — Source terminal (connected to exposed pad via lead frame)
Pin 2 Source — Source terminal
Pin 3 Source — Source terminal
Pin 4 Gate — Gate drive input
Pin 5 Source — Source terminal
Pin 6 Source — Source terminal
Pin 7 Source — Source terminal
Pin 8 Source — Source terminal
Pin PAD Drain — Drain terminal (exposed thermal pad on underside)

Safe Operating Area - DC

DC Continuous Operation

Typical Applications

BSC019N04NSGATMA1 is suitable for 6 applications: 12V Hot-Swap and E-Fuse, Synchronous Rectification in DC-DC Converters, OR-ing Diode Replacement in Redundant Power, Battery Protection and Load Switch in Power Tools, Motor Drive and H-Bridge (Low-Side Switch), Automotive 12V Load Switching.

🖥️

12V Hot-Swap and E-Fuse

The BSC019N04NSGATMA1's 1.9 mΩ typical RDS(on) and 40 V VDS rating make it an ideal pass-element for 12 V hot-swap controllers in server backplanes and telecom equipment. With 100 A continuous ID at TC=25C, it can sustain steady-state loads of 60-80 A on a properly laid-out 4-layer PCB without exceeding thermal limits. The exposed drain pad provides a low thermal-impedance path (~50 °C/W on 1 oz copper) for inrush energy dissipation during hot-insertion events.

Synchronous Rectification in DC-DC Converters

Used as the low-side synchronous FET in 12 V-input buck converters above 30 A, the BSC019N04NSGATMA1 replaces Schottky diodes and roughly halves rectification loss because its 1.9 mΩ RDS(on) at VGS=10V produces less voltage drop than a 30 A Schottky at typical operating currents. The 40 V rating gives ample margin above 12 V plus transients, and the OptiMOS gate charge is tuned for sub-100 nC total Qg, enabling 300-500 kHz switching frequencies in point-of-load converters.

🌐

OR-ing Diode Replacement in Redundant Power

In redundant 12 V server and telecom power architectures, the BSC019N04NSGATMA1 replaces Schottky OR-ing diodes with a MOSFET that drops only ~190 mV at 100 A versus ~500 mV for a Schottky. This eliminates several watts of dissipation per feed and removes heatsinks. The part's 100 A continuous rating easily handles N+1 redundant load currents of 40-60 A per feed. Its low gate charge enables fast disconnect during fault events when driven by a dedicated OR-ing controller.

🏭

Battery Protection and Load Switch in Power Tools

Cordless power tools running on 18-20 V battery packs (10S Li-ion nominal 36 V max) require low-loss disconnect switches, and the BSC019N04NSGATMA1's 1.9 mΩ RDS(on) at VGS=10V provides the lowest conduction loss in its class. At 30 A continuous drain current on a 1 oz copper board, the part can handle peak motor currents of 80-100 A for short bursts. The PG-TDSON-8-1 package withstands the mechanical vibration typical of handheld tools when the drain pad is properly soldered to the board.

🏭

Motor Drive and H-Bridge (Low-Side Switch)

In 24 V brushed-DC motor H-bridges, the BSC019N04NSGATMA1 serves as the low-side switch, leveraging its 40 V VDS and 1.9 mΩ RDS(on) to minimize conduction loss during PWM operation. The 125 W power dissipation at TC=25C supports continuous currents up to 30 A on a small heatsink. The low gate charge permits 20-50 kHz PWM frequencies for smooth torque control without excessive switching loss.

🚗

Automotive 12V Load Switching

Automotive 12 V body controllers and ECU outputs need robust, low-loss switches. The BSC019N04NSGATMA1's 40 V VDS accommodates 12 V crank and load-dump transients up to ~35 V, and its 1.9 mΩ RDS(on) minimizes thermal rise when driving lamps, solenoids, or motor loads. Although not AEC-Q101 qualified, it is widely used in non-safety automotive applications; for AEC-Q101 drop-in parts see Infineon's automotive-grade OptiMOS siblings in the same PG-TDSON-8-1 footprint.

What is the maximum drain-source voltage of BSC019N04NSGATMA1?
The BSC019N04NSGATMA1 has a maximum drain-source voltage (VDS) of 40 V. According to the Infineon OptiMOS datasheet, this makes the part suitable for 12 V and 24 V bus systems with sufficient transient headroom. Designers must add TVS or snubber protection if switching spikes exceed the 40 V rating.
What is the typical on-resistance of BSC019N04NSGATMA1 at VGS=10V?
The BSC019N04NSGATMA1 has a typical on-state resistance of 1.9 mΩ at VGS = 10 V, with a maximum of 2.5 mΩ at 25 °C. This places it among the lowest-RDS(on) 40 V MOSFETs available, per the Infineon OptiMOS datasheet curve. Lower RDS(on) directly translates into lower I²R conduction loss in high-current paths.
How much continuous drain current can BSC019N04NSGATMA1 handle?
The BSC019N04NSGATMA1 is rated for 100 A continuous drain current at TC = 25 °C and 30 A at TA = 25 °C with the standard 1 oz copper PCB footprint. Thermal derating is significant - at TA = 100 °C with the same PCB the rating drops to roughly 12 A. Use the TC rating when designing heatsink-attached applications.
Where to buy BSC019N04NSGATMA1 online?
BSC019N04NSGATMA1 is in stock at DigiKey, Mouser, LCSC, and several authorized Infineon distributors as of 2026-09-13. Octopart aggregates real-time stock from 7-8 distributors including Rochester Electronics for legacy stock. Lead time is generally same-day shipment at qty 1-100 from major distributors.
What is the price of BSC019N04NSGATMA1?
The unit price of BSC019N04NSGATMA1 is approximately USD 0.91 at qty 1, dropping to USD 0.58 at qty 1000, as of 2026-09-13 from LCSC and aggregated Octopart listings. Volume pricing varies by distributor - DigiKey and Mouser are typically 10-20% higher than LCSC for the same reel. Bulk reels of 5000 pieces reach the lowest per-unit cost.
What is the lead time for BSC019N04NSGATMA1?
Lead time for BSC019N04NSGATMA1 is same-day to 2 weeks from authorized distributors as of 2026-09-13. DigiKey and Mouser typically ship within 24 hours for orders under 5000 pieces. For larger production quantities (10k+), direct orders to Infineon franchised distributors run 4-6 weeks.
BSC019N04NSGATMA1 vs BSC0906NSATMA1 - which is better for 12V OR-ing?
BSC019N04NSGATMA1 (40 V, 1.9 mΩ) is the better choice for 12 V OR-ing because its lower RDS(on) halves the conduction loss versus the BSC0906NSATMA1 (60 V, ~9 mΩ) at the same 50 A load. The 40 V rating is still adequate for a 12 V rail with standard TVS protection. Choose BSC0906NS only if you need the 60 V transient rating for 24 V systems.
BSC019N04NSGATMA1 vs BSC014N04LSIATMA1 - what is the difference?
BSC019N04NSGATMA1 and BSC014N04LSIATMA1 are both 40 V OptiMOS N-channel MOSFETs in the PG-TDSON-8-1 package. The BSC014N04LSIATMA1 has a lower typical RDS(on) of 1.4 mΩ versus 1.9 mΩ, giving roughly 25% lower conduction loss. Both share the same pinout, so they are drop-in compatible; choose the '14' variant when on-resistance dominates the design.
When should I choose BSC019N04NSGATMA1 over BSC0901NSATMA1?
Choose BSC019N04NSGATMA1 when you need the lowest possible RDS(on) at 40 V for high-current 12 V applications such as OR-ing, hot-swap, or high-current synchronous rectification. Choose BSC0901NSATMA1 (60 V, ~10 mΩ) when the bus is 24 V industrial or you need wider transient margin. Both are PG-TDSON-8-1 and pin-compatible, so layout is identical.
Is BSC019N04NSGATMA1 suitable for hot-swap applications?
Yes, the BSC019N04NSGATMA1 is well suited for 12 V hot-swap and e-fuse circuits because of its 1.9 mΩ typical RDS(on) and 40 V VDS rating. Its SOA capability at 100 A pulsed allows inrush limiting up to several hundred joules with proper gate ramp. Use a TVS across drain-source to clamp inductive kick during hot-insertion.
What is the best drop-in replacement for BSC019N04NSGATMA1?
The best same-brand drop-in replacements are BSC014N04LSIATMA1 and BSC014N04LSATMA1, both in the PG-TDSON-8-1 footprint with identical pinout and lower RDS(on) (1.4 mΩ typical). For cross-brand drop-in equivalents in the same package, look at onsemi NTMFS0XXX series or Vishay SiRA12DP - confirm pinout before substituting because some competitors mirror the pin order.
Where to download BSC019N04NSGATMA1 datasheet PDF?
The official BSC019N04NSGATMA1 datasheet PDF is hosted on Infineon's product page at infineon.com under the OptiMOS 40V family. Third-party mirrors are available on Alldatasheet and ADatasheet, but always cross-check the revision letter against the manufacturer's site. The datasheet contains SOA curves, gate-charge graphs, and thermal impedance data.
Where to find BSC019N04NSGATMA1 pinout for PG-TDSON-8-1?
The PG-TDSON-8-1 pinout for BSC019N04NSGATMA1 is shown in the Infineon datasheet package section: gate on pin 4, source on pins 1-3 and 5-8, drain on the exposed pad underneath. The exposed pad is the primary thermal path and must be soldered to a sufficiently large copper pour for the rated 125 W TC dissipation.
What are the key specifications of BSC019N04NSGATMA1 that engineers should know?
The BSC019N04NSGATMA1 is defined by five headline numbers: 40 V VDS max, 100 A continuous ID at TC=25C, 1.9 mΩ typical RDS(on) at VGS=10V, 125 W power dissipation at TC=25C, and PG-TDSON-8-1 surface-mount package. These five parameters cover voltage stress, current capability, conduction loss, thermal budget, and PCB footprint - the primary constraints in any high-current 40 V design.
Hey Google, what Infineon MOSFET can replace BSC019N04NSGATMA1?
Yes - within Infineon's own OptiMOS 40 V family, the BSC014N04LSIATMA1 and BSC014N04LSATMA1 are drop-in pin-compatible replacements with 1.4 mΩ typical RDS(on) (about 25% lower conduction loss). They share the same PG-TDSON-8-1 footprint and identical gate-drive requirements, making them direct upgrades for thermal-limited designs.

Engineering reference data for BSC019N04NSGATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose BSC019N04NSGATMA1 when you need the lowest possible conduction loss in a 40 V-rated N-channel MOSFET on a PG-TDSON-8-1 footprint, especially for 12 V hot-swap, OR-ing, synchronous rectification, or e-fuse circuits where steady-state dissipation dominates the thermal budget. Choose BSC014N04LSIATMA1 or BSC014N04LSATMA1 when an additional 25% reduction in RDS(on) is worth the modest cost premium and you want to stay within the same OptiMOS family. Choose BSC0906NSATMA1 or BSC0902NSIATMA1 when the bus is 24 V industrial or you need wider transient headroom above 40 V. Choose BSC022N04LS6ATMA1 when cost is the primary constraint and 2.2 mΩ RDS(on) is acceptable.

Comparison with Alternatives

Parameter This Product BSC014N04LSIATMA1 BSC014N04LSATMA1 BSC0906NSATMA1 BSC022N04LS6ATMA1 BSC0902NSIATMA1
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package PG-TDSON-8-1 PG-TDSON-8-1 - same PG-TDSON-8-1 - same PG-TDSON-8-1 - same PG-TDSON-8-1 - same PG-TDSON-8-1 - same
Drain-Source Voltage (VDS) 40 V 40 V 40 V 60 V 40 V 60 V
RDS(on) typ at VGS=10V 1.9 mΩ 1.4 mΩ 1.4 mΩ ~9 mΩ 2.2 mΩ ~10 mΩ
Continuous Drain Current (TC=25C) 100 A 100 A 100 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Power Dissipation (TC=25C) 125 W 125 W 125 W 125 W 125 W 125 W
Operating Temperature Range -55C to +150C -55C to +150C -55C to +150C -55C to +150C -55C to +150C -55C to +150C
Unit Price (qty 1, USD) 0.91 1.05 1.05 0.95 0.78 0.85
RoHS Compliance Compliant Compliant Compliant Compliant Compliant Compliant

Key Differentiators

  • Lowest RDS(on) in 40V OptiMOS family (vs BSC022N04LS6ATMA1)
  • 40 V rating suits 12 V / 19 V applications with adequate transient margin (vs BSC0906NSATMA1)
  • Pin-compatible upgrade path within same family (vs BSC014N04LSIATMA1)

Design Notes

Estimated: at ID = 60 A continuous and RDS(on) = 2.5 mΩ max, the BSC019N04NSGATMA1 dissipates roughly 9 W (60² × 0.0025). With a 4-layer PCB and 1 sq-inch copper pour under the exposed pad, RθJA is approximately 50 °C/W, yielding a junction temperature rise of 70 °C above ambient. For full 100 A operation, mount the device to a heatsink or use at least 4 sq-inch of 2 oz copper on top and bottom layers.

The PG-TDSON-8-1 package's exposed pad is the primary drain connection AND the dominant thermal path. Use at least 8 thermal vias (0.3 mm drill, 1 oz copper plating) directly under the pad connecting top, inner, and bottom copper layers. Inadequate via count is the single most common cause of thermal failure in PG-TDSON designs, typically raising RθJA by 30-50% versus a properly via-stitched layout.

Do not drive the gate above the absolute maximum VGS of ±20 V - typical gate-source failure occurs at 25 V due to oxide rupture. Use a gate-source Zener (15-18 V) for protection if the gate driver can overshoot. Also, never operate in linear mode for sustained periods - the SOA curve drops to ~3 A at 40 V VDS, so PWM switching only. For inrush limiting, ramp VGS with an RC network to stay within SOA.

Keep the gate-drive loop (gate-driver output -> gate -> source -> gate-driver ground return) area under 1 sq-cm to minimize parasitic inductance and prevent oscillations. Place a 10 Ω gate resistor within 5 mm of the gate pin to damp ringing. The high-current source loop (drain -> load -> source -> input cap) should be a wide, short copper pour, ideally on the top layer to minimize stray inductance that would otherwise create VDS overshoot during turn-off.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, refer to Infineon automotive-grade OptiMOS siblings. Lead-free and halogen-free reflow-compatible per JEDEC J-STD-020.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies BSC019N04NSGATMA1 BSC014N04LSIATMA1 BSC014N04LSATMA1 BSC0906NSATMA1 BSC022N04LS6ATMA1 BSC0902NSIATMA1 OptiMOS trench MOSFET N-channel MOSFET PG-TDSON-8-1 TDSON-8 FL RDS(on) RoHS REACH JEDEC J-STD-020 AEC-Q100 OR-ing hot-swap synchronous rectification load switch DC-DC converter 12V bus 24V bus
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