K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
MPN: K4AAG165WA-BCPB ✓ פעילK4AAG165WA-BCPB סקירה
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, sitting within the memory hierarchy as a volatile DRAM technology under the broader semiconductor memory category. It transfers data on both clock edges, doubling effective bandwidth compared to SDR memory, and uses a low-voltage 1.2 V interface with programmable termination to reduce power.
Key features of the K4AAG165WA family include a 16 Gb density organized 1G x 16, data rates up to 3200 Mbps per the Samsung DDR4 product guide, 1.2 V core operation, and an internal bank group architecture that improves effective bandwidth. The x16 organization suits systems needing 16-bit-wide memory interfaces without byte-lane steering complexity.
Architecturally, the device uses DDR4 bank groups, on-die termination (ODT), and a command/address training mechanism. Samsung's DDR4 devices consume roughly 25% lower power than equivalent DDR3 parts thanks to the reduced 1.2 V supply and refined process node, improving battery life and thermal margins in mobile and embedded systems.
Typical applications include laptop and notebook memory modules, embedded systems, industrial computing, networking equipment, and select Samsung-equipped consumer platforms requiring high-density DDR4 in discrete component form.
When designing with this device, follow the Samsung DDR4 product guide for PCB routing rules, fly-by termination, and power sequencing of the 1.2 V VDD and VDDQ rails, and verify the operating temperature grade indicated by the suffix letter on your specific speed/temp ordering code.
This page synthesizes distributor pricing, same-family drop-in variants, and practical design notes not found in the manufacturer datasheet, with all pricing cited as of 2026-09-04.
חלופות תחליף ישיר עבור K4AAG165WA-BCPB — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם K4AAG165WA-BCPB (אותו גורם צורה וטביעת רגל) — שונים ב Package, Data Rate, Operating Temperature, Memory Type, Memory Format.
K4AAG165WA-BCWE
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4AAG165WA-BCTD
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4AAG165WA-BIWE
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4A8G165WC-BCPB
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4A8G165WB-BCPB
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4AAG165WA-BCPB דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | Volatile DRAM (DDR4 SDRAM) |
| Technology | DDR4 |
| Density | 16 Gb |
| ארגון | 1G x 16 |
| קצב נתונים | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| Interface Voltage (VDDQ) | 1.2 V |
| מארז | FBGA-96 |
| סוג הרכבה | Surface Mount |
| Memory Format | DRAM |
| Packaging | Tray |
| Product Status | Active |
| Power Consumption | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | Yes |
| Max Capacity Family | Up to 32GB component (Samsung DDR4 family) |
מדריך תצורת פינים של K4AAG165WA-BCPB fbga-96
תצורת פינים עבור K4AAG165WA-BCPB (מארזת fbga-96). מעגל משולב דיגיטלי זה כולל GPIO, ממשקי תקשורת (UART, SPI, I2C) ופיני מתח. יש לעיין בגיליון הנתונים של היצרן לפונקציות פינים חלופיות ולאפשרויות תצורה. חיוני לתכנון מערכות משובצות ולפריסת PCB.
אין נתוני פריסת פינים מפורטים עבור K4AAG165WA-BCPB.
עיינו ב- גיליון נתונים עבור תצורת פינים מלאה.
יישומים טיפוסיים
K4AAG165WA-BCPB מתאים עבור 6 יישוםs: Notebook and Laptop Memory, Embedded and Industrial Computing, Networking Equipment, Consumer Electronics and Set-Top Platforms, Test and Measurement Instruments, Automotive Infotainment and Displays (Non-Safety).
Notebook and Laptop Memory
The K4AAG165WA-BCPB fits discrete notebook memory designs where 16 Gb per chip maximizes capacity within a limited component count. A 64-bit DDR4 bus needs only four of these x16 devices to reach 8 GByte, versus eight 8 Gb parts, halving BOM position count and PCB area under the SoC. Operating at 3200 Mbps class speed with 1.2 V rails, it aligns with mainstream mobile platforms and benefits from DDR4's roughly 25% lower power versus DDR3, improving battery runtime and thermal headroom in thin chassis. Designers should follow Samsung's product guide for length-matched routing and ODT programming to hold signal integrity at full data rate.
מומלץ
Embedded and Industrial Computing
Industrial gateways, HMI panels, and embedded controllers use the K4AAG165WA-BCPB where 2 GByte per chip simplifies memory sizing for Linux-class workloads. The FBGA-96 footprint mounts on four or six-layer boards with standard DDR4 fly-by topology, and the 1.2 V VDD/VDDQ rails integrate easily with common PMICs designed for DDR4 platforms. For industrial ambient conditions, pair with the same-die industrial-grade variant K4AAG165WA-BIWE, which is listed specifically for industrial substitution in icDirectory cross-reference data. Verify the controller's address map supports 1G x 16 row/column geometry before finalizing the boot configuration.
מומלץ
Networking Equipment
Enterprise switch and router control planes require large, fast buffers for packet tables and flow state; the K4AAG165WA-BCPB provides 16 Gb at 3200 Mbps class bandwidth on a compact x16 interface. Its bank-group architecture improves effective bandwidth for the random access patterns typical of packet processing, and 1.2 V operation keeps switch-line-card power budgets in check. Because networking boards often run 24/7 at elevated ambient, thermal design and conservative derating of the 1.2 V rails are recommended, and the same-family speed/temperature suffix variants allow one PCB layout to serve multiple performance tiers.
מומלץ
Consumer Electronics and Set-Top Platforms
Smart TV, set-top box, and gaming-peripheral SoCs frequently require 1.5-4 GByte of DDR4; two K4AAG165WA-BCPB chips deliver 4 GByte on a 32-bit bus with minimal PCB area. The 3200 Mbps class rate supports 4K video decode headroom, while DDR4's lower 1.2 V power simplifies passive cooling in enclosed set-top housings. Cost per GByte at the 16 Gb density point is favorable versus stacking smaller parts. Repair and refurbishment channels also use this exact FBGA-96 component for standalone chip replacement on Samsung-equipped laptops, as documented in aftermarket repair guides for the -BCWE variant.
מומלץ
Test and Measurement Instruments
Oscilloscope, logic analyzer, and signal-generator designs capture long records, and main acquisition memory is a dominant cost. The K4AAG165WA-BCPB's 16 Gb density lets an instrument board store multi-gigabyte waveforms with a small number of x16 devices, and its 3200 Mbps class interface keeps data streaming to acquisition ASICs within budget. Deterministic latency is less critical here than capacity, so designers often clock below maximum data rate for timing margin, using the same-family speed-grade suffix variants. Follow Samsung's guidelines for ZQ calibration and write leveling during controller bring-up to guarantee margin across production units.
מומלץ
Automotive Infotainment and Displays (Non-Safety)
Automotive infotainment SoCs and cluster display controllers commonly specify industrial-temperature DDR4; the K4AAG165WA-BCPB family supports this use via its industrial-grade suffix variant K4AAG165WA-BIWE. Sixteen gigabit per chip meets the 2-4 GByte typical demand of navigation and 3D cluster rendering, and the x16 organization matches the 32/64-bit memory controllers common in these SoCs. Note this component itself is not AEC-Q100 characterized; for safety-critical or powertrain domains, select purpose-built automotive DDR4 instead. The 1.2 V rails ease integration with automotive PMIC DDR4 outputs and support the extended-temperature power budget of dash-mounted electronics.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור K4AAG165WA-BCPB — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | K4AAG165WA-BCWE | K4AAG165WA-BCTD | K4AAG165WA-BIWE | K4A8G165WC-BCPB | K4A8G165WB-BCPB |
|---|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same footprint | FBGA-96 - same footprint |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 512M x 16 | 512M x 16 |
| Technology | DDR4 | DDR4 | DDR4 | DDR4 | DDR4 | DDR4 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Product Status | Active | Active | Active | Active | Active | Active |
מבדילים עיקריים
- Highest density per socket in the x16 family on this page (לעומתK4A8G165WC-BCPB)
- Same-die temperature-grade freedom within one footprint (לעומתK4AAG165WA-BCWE)
- x16 interface simplicity versus x8 (לעומתK4AAG085WA-BCWE)
הערות תכנון
Route the DDR4 bus using fly-by topology for command/address/clock with series termination at the far end, and length-match data groups (DQ/DM/DQS) within the tight per-group skew budget specified in the Samsung DDR4 product guide. Keep the FBGA-96 footprint with via-in-pad or dog-bone escape as appropriate for 3200 Mbps-class operation. Reference all signals to solid VSS/VDDQ planes; do not split reference planes under data groups.
Provide tightly regulated 1.2 V for VDD and VDDQ per DDR4 requirements, plus VPP and VTT rails per the datasheet power table. Use bulk capacitance near each rank and distribute 0.1 uF ceramics at each power ball. Estimated: four devices on a 64-bit bus at typical DDR4 activity can draw on the order of 1-2 A per rail depending on access pattern - size the PMIC accordingly, then validate against Samsung's IDD specification tables for your operating frequency.
Decode the full ordering code before purchase: the suffix letters encode die revision handling, speed bin, and temperature grade, so an -BCPB is not automatically interchangeable with -BCWE or -BCTD in extended-temperature designs. Also confirm the SoC memory controller supports 1G x 16 geometry and DDR4 bank groups; mismatched row/column/address maps cause boot failures that mimic solder defects.
At 3200 Mbps class rates, enable controller write leveling, read training, and ZQ calibration during bring-up, and program on-die termination (ODT) values per the Samsung DDR4 product guide recommendations for your topology (two vs four devices per channel). Eye-margin validation across temperature corners is recommended before releasing the layout to production.
מידע על תאימות
Compliance data was not present in the provided verified web data. Samsung DRAM components are typically RoHS compliant, but this must be confirmed on the official Samsung product page before use.
