K4AAG165WA-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung
MPN: K4AAG165WA-BCTD ✓ פעילK4AAG165WA-BCTD סקירה
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, sitting within the memory hierarchy as DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4. Compared with DDR3, DDR4 lowers operating voltage from 1.5 V to 1.2 V, increases bank count to 16 (with bank groups), and raises per-pin data rates, delivering higher bandwidth at lower energy per bit. DDR4 is the dominant main-memory technology for computing systems, embedded controllers, and industrial platforms.
Key features of this device include the 16 Gbit density in a x16 organization, a 2666 Mbps data rate (PC4-21300 class performance), and the low 1.2 V core supply that reduces dynamic power versus earlier generations. Samsung DDR4 also employs bank-group architecture for improved effective bandwidth and delivers strong reliability metrics suitable for volume computing platforms.
Technically, the device uses a synchronous interface clocked by the memory controller, with internal banks arranged in bank groups so that accesses to different groups can be pipelined, raising effective throughput. The 96FBGA surface-mount package minimizes signal-path length, supporting the tight timing margins required at 2666 Mbps. Termination (ODT) and DLL-based timing control maintain signal integrity on the high-speed address/command and data buses.
Typical applications include desktop and notebook PC main memory (SODIMM/UDIMM modules), embedded and industrial computing boards, networking equipment line-card memory, smart TVs and set-top boxes, and consumer electronics requiring 2 GB-per-chip-class density in a x16-wide data bus.
Design consideration: at 2666 Mbps, PCB trace-length matching, reference-plane continuity, and per-byte ODT configuration are critical; always follow the memory controller vendor's layout guideline for fly-by or symmetric routing and verify AC timing at your target CL setting.
This page adds information gain beyond the datasheet: distributor pricing snapshots, drop-in same-footprint alternatives from Samsung's own speed/temp/organization matrix, and practical DDR4 layout and sourcing notes in one place.
חלופות תחליף ישיר עבור K4AAG165WA-BCTD — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם K4AAG165WA-BCTD (אותו גורם צורה וטביעת רגל) — שונים ב Package, Interface, Data Rate, RoHS Status, Memory Type.
K4AAG165WA-BCWE
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4AAG165WA-BCRC
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4AAG165WA-BCPB
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4AAG165WA-BCTDTCV
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4AAG165WA-BIWE
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4AAG165WC-BCWE
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
K4AAG085WA-BCTD
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4AAG165WA-BCTD דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR4 SDRAM |
| גודל זיכרון | 16 Gb |
| Memory Organization | 1G x 16 |
| קצב נתונים | 2666 Mbps |
| מתח אספקה | 1.2 V |
| ממשק | Synchronous, DDR4 |
| טמפרטורת פעולה | 0C to +85C |
| מארז | 96-FBGA |
| סוג הרכבה | Surface Mount |
| Memory Format | Volatile (DRAM) |
| Bank Architecture | DDR4 bank-group architecture |
| Technology Family | DDR4 SDRAM (Samsung K4AAG165WA series) |
| Application Class | Computing, embedded, consumer main memory |
| Package Family | FBGA -> fine-pitch BGA -> surface mount |
| Temperature Grade | Commercial (0C to +85C) |
מדריך תצורת פינים של K4AAG165WA-BCTD fbga -> fine-pitch bga -> surface mount
תצורת פינים עבור K4AAG165WA-BCTD (מארזת fbga -> fine-pitch bga -> surface mount). מעגל משולב דיגיטלי זה כולל GPIO, ממשקי תקשורת (UART, SPI, I2C) ופיני מתח. יש לעיין בגיליון הנתונים של היצרן לפונקציות פינים חלופיות ולאפשרויות תצורה. חיוני לתכנון מערכות משובצות ולפריסת PCB.
אין נתוני פריסת פינים מפורטים עבור K4AAG165WA-BCTD.
עיינו ב- גיליון נתונים עבור תצורת פינים מלאה.
יישומים טיפוסיים
K4AAG165WA-BCTD מתאים עבור 6 יישוםs: PC Main Memory (UDIMM/SODIMM Modules), Embedded and Industrial Computing Boards, Networking and Communication Equipment, Consumer Electronics and Smart TVs, Test and Measurement Instruments, Server and Workstation Memory Subsystems.
PC Main Memory (UDIMM/SODIMM Modules)
The K4AAG165WA-BCTD serves as a core DRAM component on desktop UDIMMs and notebook SODIMMs, where its 16 Gb density and 1G x 16 organization allow eight chips to form a 16 GB module on a 64-bit bus. Running at 2666 Mbps (PC4-21300 class), it delivers roughly 21.3 GB/s per-channel peak bandwidth at 1.2 V, meeting mainstream computing bandwidth needs. On modules, SPD EEPROM (such as TSE2004GB or 34T01) stores timing parameters so the host BIOS configures CL, ODT, and refresh rates automatically. Thermal design remains simple at DRAM power levels, but module-level layout must follow JEDEC DDR4 routing rules for length matching and stub control.
מומלץ
Embedded and Industrial Computing Boards
Embedded controllers, single-board computers, and industrial PCs use K4AAG165WA-BCTD as main memory alongside processors with DDR4 controllers. Its 1.2 V operation lowers system power versus DDR3, important for fanless enclosures. The x16 organization suits 32-bit or 64-bit memory buses common in embedded SoCs. Designers should confirm the 0C to +85C commercial range covers the enclosure's internal ambient; for extended-temperature industrial deployments the BCWE variant (-40C to +95C) in the identical 96FBGA footprint is the recommended substitution. Layout must respect controller fly-by routing guidance and per-byte ODT configuration for reliable operation at 2666 Mbps.
מומלץ
Networking and Communication Equipment
Switches, routers, and network appliances rely on K4AAG165WA-BCTD for packet buffering and control-plane memory. The 2666 Mbps data rate provides the bandwidth network processors need for deep packet queues, while 16 Gb density supports large flow tables and buffer descriptors. The 1.2 V core keeps power budgets within typical 1U equipment limits. In networking designs the memory often runs with ECC; note that x16 devices implement on-die ECC internally, while link ECC requires x8-width parts - verify your controller's ECC scheme when choosing between x16 BCTD and x8 equivalents. Ensure signal integrity with controlled-impedance routing across the memory bus.
מומלץ
Consumer Electronics and Smart TVs
Smart TVs, set-top boxes, and game consoles use K4AAG165WA-BCTD as main system memory where its 2 GB-per-chip capacity satisfies 4K UI rendering, app execution, and video buffering requirements. The x16 data width pairs naturally with cost-optimized 16-bit and 32-bit SoC memory buses found in consumer silicon. At 1.2 V and 2666 Mbps the part balances responsiveness against the energy budgets of always-on consumer devices. Commercial temperature rating (0C to +85C) is adequate for typical household environments. Consumer designs benefit from the 96FBGA package's small footprint, allowing memory placement close to the SoC for clean 2666 Mbps signaling.
מומלץ
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators use K4AAG165WA-BCTD for acquisition memory and waveform storage. Its 16 Gb density extends capture depth, a headline spec for scope buyers, while the 2666 Mbps interface keeps up with high-throughput acquisition ASICs writing sample streams. Benchtop instruments operate in controlled 0C to +85C environments, well within the commercial rating. Designers should implement the DDR4 controller's calibration routines (write leveling, read training) to maintain timing across temperature drift, and follow the Samsung DDR4 design guide for the fly-by address/command topology used in multi-chip memory subsystems of professional instruments.
מומלץ
Server and Workstation Memory Subsystems
Entry-level servers and workstations populate RDIMM and LRDIMM modules with K4AAG165WA-class DDR4 chips for main system memory. The device's bank-group architecture pipelining raises effective bandwidth at 2666 Mbps, and its 1.2 V operation contributes to data-center energy efficiency targets. Multi-rank module designs use register/CDM clock drivers and thermal sensors alongside the DRAM. For server deployments with wide temperature swings or high ambient, the BCWE extended-temperature variant in the same 96FBGA footprint is preferable. Module-level designs must implement per-rank ODT profiles and follow JEDEC DDR4 module routing to sustain error rates demanded by server workloads.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור K4AAG165WA-BCTD — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | K4AAG165WA-BCWE | K4AAG165WA-BCRC | K4AAG165WA-BIWE | K4AAG165WC-BCWE | K4AAG085WA-BCTD |
|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 8 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
מבדילים עיקריים
- Extended-temperature sibling available in identical footprint (לעומתK4AAG165WA-BCWE)
- Higher speed bin margin (לעומתK4AAG165WA-BIWE)
- Double the density per chip (לעומתK4AAG085WA-BCTD)
הערות תכנון
At 2666 Mbps, DDR4 signal integrity governs reliability. Route the data bus with controlled impedance per your controller spec, match trace lengths within controller tolerances (typically ±25 mil class rules for data, looser for address/command in fly-by topology), and keep complete, unbroken reference planes under all memory signals. Configure ODT (on-die termination) per Samsung's DDR4 design guide and your controller's ODT table; incorrect ODT is the most common cause of marginal eye diagrams and intermittent errors at full speed.
The K4AAG165WA-BCTD operates from a 1.2 V VDD with separate VPP (typically 2.5 V) for word-line bootstrapping. Provide a clean 1.2 V rail with adequate transient current capacity - DRAM active currents arrive in bursts synchronized to read/write bursts. Use bulk capacitance near each chip plus high-frequency ceramic decoupling on every VDD ball, and follow the controller vendor's recommended decoupling network for DDR4 power distribution.
Do not confuse this part with LPDDR4: several marketplace articles mislabel K4AAG165WA-BCTD as LPDDR4 at 4266 Mbps, but the Samsung datasheet identifies it as standard DDR4 at 2666 Mbps in 96FBGA. Also note the 0C to +85C commercial temperature limit - substituting BCWE (-40C to +95C) requires no layout change and is the correct move for extended-temperature designs. Finally, verify controller speed-grade support before swapping to higher bins such as BIWE (3200 Mbps).
מידע על תאימות
Compliance data for this exact MPN was not present in the verified web data. Request material declaration certificates from Samsung or your distributor.
