K4AAG165WA-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung
N.º de pieza: K4AAG165WA-BCTD ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $75.74 | $75,74 |
| 10 | $71.95 | $719,50 |
| 100 | $68.17 | $6.817,00 |
| 500 | $64.38 | $32.190,00 |
| 1.000 | $60.59 | $60.590,00 |
K4AAG165WA-BCTD Descripción general
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, sitting within the memory hierarchy as DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4. Compared with DDR3, DDR4 lowers operating voltage from 1.5 V to 1.2 V, increases bank count to 16 (with bank groups), and raises per-pin data rates, delivering higher bandwidth at lower energy per bit. DDR4 is the dominant main-memory technology for computing systems, embedded controllers, and industrial platforms.
Key features of this device include the 16 Gbit density in a x16 organization, a 2666 Mbps data rate (PC4-21300 class performance), and the low 1.2 V core supply that reduces dynamic power versus earlier generations. Samsung DDR4 also employs bank-group architecture for improved effective bandwidth and delivers strong reliability metrics suitable for volume computing platforms.
Technically, the device uses a synchronous interface clocked by the memory controller, with internal banks arranged in bank groups so that accesses to different groups can be pipelined, raising effective throughput. The 96FBGA surface-mount package minimizes signal-path length, supporting the tight timing margins required at 2666 Mbps. Termination (ODT) and DLL-based timing control maintain signal integrity on the high-speed address/command and data buses.
Typical applications include desktop and notebook PC main memory (SODIMM/UDIMM modules), embedded and industrial computing boards, networking equipment line-card memory, smart TVs and set-top boxes, and consumer electronics requiring 2 GB-per-chip-class density in a x16-wide data bus.
Design consideration: at 2666 Mbps, PCB trace-length matching, reference-plane continuity, and per-byte ODT configuration are critical; always follow the memory controller vendor's layout guideline for fly-by or symmetric routing and verify AC timing at your target CL setting.
This page adds information gain beyond the datasheet: distributor pricing snapshots, drop-in same-footprint alternatives from Samsung's own speed/temp/organization matrix, and practical DDR4 layout and sourcing notes in one place.
Alternativas directas para K4AAG165WA-BCTD — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4AAG165WA-BCTD (mismo factor de forma y huella) — difiere en Package, Interface, Data Rate, RoHS Status, Memory Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4AAG165WA-BCWE
✅ Sustitución directa✓ En stock
$62.4 / unidad
Ver hoja de datos →K4AAG165WA-BCRC
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$64.9 / unidad
Ver hoja de datos →K4AAG165WA-BCPB
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$63.79 / unidad
Ver hoja de datos →K4AAG165WA-BCTDTCV
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4AAG165WA-BIWE
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4AAG165WC-BCWE
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
K4AAG085WA-BCTD
✅ Sustitución directa✓ En stock
$10.18 / unidad
Ver hoja de datos →K4AAG165WA-BCTD Valores máximos y características eléctricas
| Tipo de memoria | DDR4 SDRAM |
| Tamaño de memoria | 16 Gb |
| Memory Organization | 1G x 16 |
| Velocidad de datos | 2666 Mbps |
| Tensión de alimentación | 1.2 V |
| Interfaz | Synchronous, DDR4 |
| Temperatura de funcionamiento | 0C to +85C |
| Encapsulado | 96-FBGA |
| Tipo de montaje | Surface Mount |
| Memory Format | Volatile (DRAM) |
| Bank Architecture | DDR4 bank-group architecture |
| Technology Family | DDR4 SDRAM (Samsung K4AAG165WA series) |
| Application Class | Computing, embedded, consumer main memory |
| Package Family | FBGA -> fine-pitch BGA -> surface mount |
| Temperature Grade | Commercial (0C to +85C) |
Guía de configuración de pines de K4AAG165WA-BCTD fbga -> fine-pitch bga -> surface mount
Configuración de pines para K4AAG165WA-BCTD (encapsulado fbga -> fine-pitch bga -> surface mount). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K4AAG165WA-BCTD.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K4AAG165WA-BCTD es adecuado para 6 aplicacións: PC Main Memory (UDIMM/SODIMM Modules), Embedded and Industrial Computing Boards, Networking and Communication Equipment, Consumer Electronics and Smart TVs, Test and Measurement Instruments, Server and Workstation Memory Subsystems.
PC Main Memory (UDIMM/SODIMM Modules)
The K4AAG165WA-BCTD serves as a core DRAM component on desktop UDIMMs and notebook SODIMMs, where its 16 Gb density and 1G x 16 organization allow eight chips to form a 16 GB module on a 64-bit bus. Running at 2666 Mbps (PC4-21300 class), it delivers roughly 21.3 GB/s per-channel peak bandwidth at 1.2 V, meeting mainstream computing bandwidth needs. On modules, SPD EEPROM (such as TSE2004GB or 34T01) stores timing parameters so the host BIOS configures CL, ODT, and refresh rates automatically. Thermal design remains simple at DRAM power levels, but module-level layout must follow JEDEC DDR4 routing rules for length matching and stub control.
Recomendado
Embedded and Industrial Computing Boards
Embedded controllers, single-board computers, and industrial PCs use K4AAG165WA-BCTD as main memory alongside processors with DDR4 controllers. Its 1.2 V operation lowers system power versus DDR3, important for fanless enclosures. The x16 organization suits 32-bit or 64-bit memory buses common in embedded SoCs. Designers should confirm the 0C to +85C commercial range covers the enclosure's internal ambient; for extended-temperature industrial deployments the BCWE variant (-40C to +95C) in the identical 96FBGA footprint is the recommended substitution. Layout must respect controller fly-by routing guidance and per-byte ODT configuration for reliable operation at 2666 Mbps.
Recomendado
Networking and Communication Equipment
Switches, routers, and network appliances rely on K4AAG165WA-BCTD for packet buffering and control-plane memory. The 2666 Mbps data rate provides the bandwidth network processors need for deep packet queues, while 16 Gb density supports large flow tables and buffer descriptors. The 1.2 V core keeps power budgets within typical 1U equipment limits. In networking designs the memory often runs with ECC; note that x16 devices implement on-die ECC internally, while link ECC requires x8-width parts - verify your controller's ECC scheme when choosing between x16 BCTD and x8 equivalents. Ensure signal integrity with controlled-impedance routing across the memory bus.
Recomendado
Consumer Electronics and Smart TVs
Smart TVs, set-top boxes, and game consoles use K4AAG165WA-BCTD as main system memory where its 2 GB-per-chip capacity satisfies 4K UI rendering, app execution, and video buffering requirements. The x16 data width pairs naturally with cost-optimized 16-bit and 32-bit SoC memory buses found in consumer silicon. At 1.2 V and 2666 Mbps the part balances responsiveness against the energy budgets of always-on consumer devices. Commercial temperature rating (0C to +85C) is adequate for typical household environments. Consumer designs benefit from the 96FBGA package's small footprint, allowing memory placement close to the SoC for clean 2666 Mbps signaling.
Recomendado
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators use K4AAG165WA-BCTD for acquisition memory and waveform storage. Its 16 Gb density extends capture depth, a headline spec for scope buyers, while the 2666 Mbps interface keeps up with high-throughput acquisition ASICs writing sample streams. Benchtop instruments operate in controlled 0C to +85C environments, well within the commercial rating. Designers should implement the DDR4 controller's calibration routines (write leveling, read training) to maintain timing across temperature drift, and follow the Samsung DDR4 design guide for the fly-by address/command topology used in multi-chip memory subsystems of professional instruments.
Recomendado
Server and Workstation Memory Subsystems
Entry-level servers and workstations populate RDIMM and LRDIMM modules with K4AAG165WA-class DDR4 chips for main system memory. The device's bank-group architecture pipelining raises effective bandwidth at 2666 Mbps, and its 1.2 V operation contributes to data-center energy efficiency targets. Multi-rank module designs use register/CDM clock drivers and thermal sensors alongside the DRAM. For server deployments with wide temperature swings or high ambient, the BCWE extended-temperature variant in the same 96FBGA footprint is preferable. Module-level designs must implement per-rank ODT profiles and follow JEDEC DDR4 module routing to sustain error rates demanded by server workloads.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4AAG165WA-BCTD — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4AAG165WA-BCWE | K4AAG165WA-BCRC | K4AAG165WA-BIWE | K4AAG165WC-BCWE | K4AAG085WA-BCTD |
|---|---|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same | 96-FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 8 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Diferenciadores clave
- Extended-temperature sibling available in identical footprint (frente a K4AAG165WA-BCWE)
- Higher speed bin margin (frente a K4AAG165WA-BIWE)
- Double the density per chip (frente a K4AAG085WA-BCTD)
Notas de diseño
At 2666 Mbps, DDR4 signal integrity governs reliability. Route the data bus with controlled impedance per your controller spec, match trace lengths within controller tolerances (typically ±25 mil class rules for data, looser for address/command in fly-by topology), and keep complete, unbroken reference planes under all memory signals. Configure ODT (on-die termination) per Samsung's DDR4 design guide and your controller's ODT table; incorrect ODT is the most common cause of marginal eye diagrams and intermittent errors at full speed.
The K4AAG165WA-BCTD operates from a 1.2 V VDD with separate VPP (typically 2.5 V) for word-line bootstrapping. Provide a clean 1.2 V rail with adequate transient current capacity - DRAM active currents arrive in bursts synchronized to read/write bursts. Use bulk capacitance near each chip plus high-frequency ceramic decoupling on every VDD ball, and follow the controller vendor's recommended decoupling network for DDR4 power distribution.
Do not confuse this part with LPDDR4: several marketplace articles mislabel K4AAG165WA-BCTD as LPDDR4 at 4266 Mbps, but the Samsung datasheet identifies it as standard DDR4 at 2666 Mbps in 96FBGA. Also note the 0C to +85C commercial temperature limit - substituting BCWE (-40C to +95C) requires no layout change and is the correct move for extended-temperature designs. Finally, verify controller speed-grade support before swapping to higher bins such as BIWE (3200 Mbps).
Información de cumplimiento
Compliance data for this exact MPN was not present in the verified web data. Request material declaration certificates from Samsung or your distributor.
