K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
MPN: K4B4G1646D-BCK00 ✓ פעילK4B4G1646D-BCK00 סקירה
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high data rates. DDR3L is backward compatible with DDR3 and is widely used in mobile, embedded, and server systems where power efficiency is critical.
Key features include a 4Gb density, x16 organization, and a data rate of 1600 Mbps/pin. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). It operates over a commercial temperature range of 0°C to 95°C (Tcase). The 96-ball FBGA package with 0.8mm pitch enables compact PCB layouts, and the lead-free and halogen-free construction meets environmental standards.
Technically, the K4B4G1646D uses Samsung's D-die process technology, which offers improved performance and power efficiency. It features eight internal banks, auto refresh and self refresh modes, and a programmable refresh rate. The device supports DLL (Delay-Locked Loop) for precise timing and includes a temperature sensor for thermal management. The low voltage operation (1.35V) reduces power dissipation, making it suitable for thermally constrained designs.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment (routers, switches), and industrial PCs. Its high density and x16 organization make it ideal for applications requiring large memory capacity with a narrow bus width, such as SoC-based designs. The low power consumption is particularly beneficial for battery-powered devices and energy-efficient servers.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet for signal integrity. The 96-ball FBGA requires careful routing of the high-speed data lines to maintain signal quality. Also, verify the memory controller supports DDR3L voltage levels (1.35V) to avoid damage.
חלופות תחליף ישיר עבור K4B4G1646D-BCK00 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם K4B4G1646D-BCK00 (אותו גורם צורה וטביעת רגל) — שונים ב Package, CAS Latency, Data Rate, Supply Voltage, Burst Length.
K4B4G1646D-BCK0
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4B4G1646E-BYK0
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4B4G1646D-BMK0
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4B4G1646D-BPH90
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←MT41K256M16HA-125:E
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←AS4C256M16D3L-12BCN
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4B4G1646D-BCK00 דירוגים מרביים ומאפיינים חשמליים
| Density | 4 Gb |
| ארגון | 256M x 16 |
| סוג זיכרון | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) |
| קצב נתונים | 1600 Mbps/pin |
| מתח אספקה | 1.35V (1.283V to 1.45V) |
| I/O Voltage | 1.35V |
| מארז | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| טמפרטורת פעולה | 0°C to 95°C (Tcase) |
| Number of Banks | 8 |
| השהיית CAS | 11 (at 1600 Mbps) |
| Burst Length | 8, 4 (with burst chop) |
| RoHS | Compliant |
| Lead-Free | Yes |
| נטול הלוגנים | Yes |
תצורת פינים של K4B4G1646D-BCK00
| פין A1 | VDD — Power supply (1.35V) |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | DQ1 — Data input/output 1 |
| פין A4 | VSS — Ground |
| פין A5 | DQ2 — Data input/output 2 |
| פין A6 | DQ3 — Data input/output 3 |
| פין A7 | VDD — Power supply (1.35V) |
| פין A8 | DQ4 — Data input/output 4 |
| פין A9 | DQ5 — Data input/output 5 |
| פין A10 | VSS — Ground |
| פין A11 | DQ6 — Data input/output 6 |
| פין A12 | DQ7 — Data input/output 7 |
| פין B1 | VDD — Power supply (1.35V) |
| פין B2 | DQ8 — Data input/output 8 |
| פין B3 | DQ9 — Data input/output 9 |
| פין B4 | VSS — Ground |
| פין B5 | DQ10 — Data input/output 10 |
| פין B6 | DQ11 — Data input/output 11 |
| פין B7 | VDD — Power supply (1.35V) |
| פין B8 | DQ12 — Data input/output 12 |
| פין B9 | DQ13 — Data input/output 13 |
| פין B10 | VSS — Ground |
| פין B11 | DQ14 — Data input/output 14 |
| פין B12 | DQ15 — Data input/output 15 |
יישומים טיפוסיים
K4B4G1646D-BCK00 מתאים עבור 6 יישוםs: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Medical Devices.
Embedded Computing
The K4B4G1646D-BCK00 provides 4Gb DDR3L memory for embedded systems such as single-board computers and industrial PCs. Its low voltage (1.35V) reduces power consumption, and the x16 organization simplifies routing on space-constrained boards. The 96-ball FBGA package with 0.8mm pitch allows compact layouts, while the DDR3L-1600 speed ensures adequate bandwidth for general-purpose processing. Designers can pair it with SoCs like NXP i.MX6 or TI Sitara, which have integrated DDR3L controllers. The commercial temperature range (0°C to 95°C) suits typical indoor environments. For reliable operation, follow the datasheet's layout guidelines for impedance matching and decoupling.
מומלץ
Networking Equipment
In networking equipment like routers and switches, the K4B4G1646D-BCK00 offers high-density memory for packet buffering and routing tables. Its 4Gb capacity and 1600 Mbps data rate provide sufficient bandwidth for line-rate processing. The low power consumption of DDR3L is critical for densely packed line cards where thermal management is challenging. The x16 interface reduces the number of memory devices needed, simplifying board design. The device's on-die termination and programmable impedance help maintain signal integrity on high-speed traces. For 10GbE switches, multiple devices can be used to achieve the required memory bandwidth. The commercial temperature range is adequate for most networking environments.
מומלץ
Industrial Automation
The K4B4G1646D-BCK00 is suitable for industrial automation controllers that require reliable memory for real-time data logging and control algorithms. Its DDR3L low voltage operation reduces heat generation, which is beneficial in sealed enclosures. The 4Gb density allows storing large amounts of process data. The device's wide operating temperature range (0°C to 95°C) covers most industrial environments, but for extreme conditions, consider the industrial-grade variant K4B4G1646D-BPH90. The x16 organization is compatible with many industrial SoCs and FPGAs. For vibration resistance, the FBGA package with solder balls provides robust mechanical attachment. Designers should ensure proper power sequencing and decoupling as per the datasheet.
מומלץ
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCK00 provides cost-effective memory for multimedia processing. Its 4Gb capacity supports HD video streaming and multitasking. The DDR3L low voltage is ideal for power-sensitive devices that need to meet energy efficiency standards. The x16 organization is commonly used in SoC designs from MediaTek, Realtek, and Amlogic. The 96-ball FBGA package is compact, enabling slim device designs. The device's high-speed operation (1600 Mbps) ensures smooth performance for UI rendering and video playback. For consumer applications, the commercial temperature range is sufficient. The RoHS compliance meets environmental regulations for consumer markets.
מומלץ
Automotive Infotainment
The K4B4G1646D-BCK00 can be used in automotive infotainment systems for navigation, audio, and display applications. Its low power consumption is beneficial for vehicle electrical systems. The 4Gb density provides ample memory for map data and multimedia. However, the standard commercial temperature range (0°C to 95°C) may not meet automotive requirements, which often demand -40°C to 105°C. For automotive, use the industrial-grade variant K4B4G1646D-BPH90 or the AEC-Q100 qualified K4B4G1646D-BCH90. The x16 organization is compatible with automotive SoCs like Qualcomm Snapdragon and NXP i.MX8. The FBGA package offers good thermal performance. Designers must ensure the memory controller supports DDR3L voltage levels.
מומלץ
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BCK00 provides reliable memory for data acquisition and processing. Its low power consumption is critical for battery-operated portable devices. The 4Gb density allows storing high-resolution images and waveforms. The device's commercial temperature range (0°C to 95°C) is suitable for controlled clinical environments. The x16 organization is compatible with medical-grade SoCs and FPGAs. The RoHS compliance is essential for medical equipment sold in regulated markets. For safety-critical applications, consider using the industrial-grade variant for wider temperature tolerance. Proper ESD protection and power supply filtering are recommended in the design.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור K4B4G1646D-BCK00 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | K4B4G1646D-BCK0 | K4B4G1646E-BYK0 | MT41K256M16HA-125:E |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Speed Grade | DDR3L-1600 | DDR3L-1600 | DDR3L-1866 | DDR3L-1600 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
מבדילים עיקריים
- Low voltage operation (1.35V) reduces power consumption by 20% compared to standard DDR3 (לעומתK4B4G1646D-BCK0 (same voltage))
- D-die process technology offers improved performance and power efficiency (לעומתK4B4G1646E-BYK0 (E-die))
- Wide availability and mature supply chain (לעומתMT41K256M16HA-125:E (Micron))
הערות תכנון
For high-speed DDR3L signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils for data byte lanes. Use ground planes beneath the FBGA package to minimize noise. Follow the layout guidelines in the Samsung datasheet for the 96-ball FBGA package.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close to the balls as possible. Use a 10uF bulk capacitor on the power plane. Ensure the power supply can handle the peak current during refresh and burst operations. The DDR3L operates at 1.35V, so verify the voltage regulator output is within 1.283V to 1.45V.
The K4B4G1646D-BCK00 has a maximum power dissipation of approximately 1.5W during operation. The 96-ball FBGA package has a thermal resistance of about 20°C/W (theta_JA). Ensure adequate airflow or a thermal pad to keep the case temperature below 95°C. For high-density designs, consider using thermal vias under the package.
מידע על תאימות
RoHS compliant and lead-free/halogen-free per datasheet. AEC-Q100 not applicable for standard grade; automotive grade variants available.
