NT5CC256M16DP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
MPN: NT5CC256M16DP-DI ✓ פעילNT5CC256M16DP-DI סקירה
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in servers, laptops, and industrial systems.
Key features include a 4Gb density, 16-bit data bus, 800MHz clock frequency (1600 Mbps/pin), and a low operating voltage of 1.35V. The device supports programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It also includes auto-refresh and self-refresh modes for power saving.
Technically, the NT5CC256M16DP-DI uses a CMOS process and is designed to comply with all key DDR3(L) DRAM features. It has a differential clock input (CK and CK#) and all control and address inputs are synchronized to the clock. The device supports DLL (Delay-Locked Loop) for precise timing and includes a mode register for configuration. The VFBGA-96 package provides a compact footprint with excellent thermal and electrical performance.
Typical applications include main memory in embedded systems, networking equipment, industrial PCs, and automotive infotainment. Its low voltage and high speed make it ideal for power-sensitive designs. The industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
חלופות תחליף ישיר עבור NT5CC256M16DP-DI — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם NT5CC256M16DP-DI (אותו גורם צורה וטביעת רגל) — שונים ב Package, Data Rate, Supply Voltage, Burst Length, Memory Size.
NT5CC256M16DP-DIH
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←NT5CC256M16DP-FLNA
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←NT5CC256M16CP-DI
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←MT41K256M16HA-125
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4B4G1646D-BYK00
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←H5TC4G63AFR-PBA
✅ Drop-In ⚠️ מפרטים לא מאומתיםצור קשר לקבלת מחיר
הצג גיליון נתונים ←NT5CC256M16DP-DI דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR3L SDRAM |
| Density | 4Gb |
| ארגון | 256M x 16 |
| מתח אספקה | 1.35V |
| קצב נתונים | 1600 Mbps/pin (800MHz) |
| מארז | VFBGA-96 |
| טווח טמפרטורת פעולה | -40°C to +95°C (industrial) |
| השהיית CAS | 11, 12, 13 (programmable) |
| Burst Length | 8, 4 (with burst chop) |
| Number of Banks | 8 |
| ממשק | Differential clock (CK, CK#) |
| Refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes (ODT) |
| RoHS | Compliant |
| Lead-Free | Yes |
תצורת פינים של NT5CC256M16DP-DI
| פין A1 | VDD — Power supply (1.35V) |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | DQ1 — Data input/output 1 |
| פין B1 | VSS — Ground |
| פין B2 | DQ2 — Data input/output 2 |
| פין B3 | DQ3 — Data input/output 3 |
| פין C1 | VDDQ — I/O power supply |
| פין C2 | DQ4 — Data input/output 4 |
| פין C3 | DQ5 — Data input/output 5 |
| פין D1 | VSSQ — I/O ground |
| פין D2 | DQ6 — Data input/output 6 |
| פין D3 | DQ7 — Data input/output 7 |
| פין E1 | CK — Clock input (positive) |
| פין E2 | CK# — Clock input (negative) |
| פין E3 | CKE — Clock enable |
| פין F1 | CS# — Chip select |
| פין F2 | RAS# — Row address strobe |
| פין F3 | CAS# — Column address strobe |
| פין G1 | WE# — Write enable |
| פין G2 | A0 — Address input 0 |
| פין G3 | A1 — Address input 1 |
יישומים טיפוסיים
NT5CC256M16DP-DI מתאים עבור 6 יישוםs: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Data Storage Systems.
Embedded Computing
The NT5CC256M16DP-DI provides high-density, low-power memory for embedded processors and SoCs. Its 4Gb density and 16-bit interface are ideal for systems requiring moderate memory capacity with low power consumption. The 1.35V operation reduces thermal load, making it suitable for fanless designs. With a data rate of 1600 Mbps/pin, it supports fast data processing for industrial PCs and IoT gateways. The industrial temperature grade ensures reliable operation in harsh environments.
מומלץ
Networking Equipment
In networking switches and routers, the NT5CC256M16DP-DI offers high bandwidth and low latency for packet buffering and forwarding tables. Its 1600 Mbps/pin data rate supports high-throughput data paths, while the 1.35V supply minimizes power in 24/7 operation. The VFBGA-96 package saves board space, allowing dense line-card designs. The device's on-die termination improves signal integrity in high-speed traces, reducing the need for external components.
מומלץ
Industrial Automation
The NT5CC256M16DP-DI is well-suited for industrial controllers and PLCs that require reliable memory in extreme temperatures. Its industrial temperature range (-40°C to +95°C) ensures operation in factory floors and outdoor installations. The low 1.35V voltage reduces power dissipation, which is critical in sealed enclosures. With 4Gb density, it can store large control programs and data logs. The device's high-speed interface supports real-time data processing for motion control and robotics.
מומלץ
Automotive Infotainment
For automotive infotainment systems, the NT5CC256M16DP-DI provides the memory bandwidth needed for navigation, multimedia, and instrument clusters. Its automotive temperature grade ensures reliability in vehicle environments. The 1.35V operation reduces power consumption, extending battery life in electric vehicles. The compact VFBGA-96 package fits into space-constrained head units. The device's high data rate supports smooth video playback and responsive user interfaces.
מומלץ
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the NT5CC256M16DP-DI offers a cost-effective memory solution with low power consumption. Its 4Gb density is sufficient for streaming and app storage. The 1.35V supply is compatible with battery-powered devices, extending usage time. The device's high speed enables smooth 4K video playback. The VFBGA-96 package is ideal for slim designs.
מומלץ
Data Storage Systems
The NT5CC256M16DP-DI is used in SSDs and network-attached storage (NAS) as cache memory. Its high bandwidth and low latency improve data access speeds. The 1.35V operation reduces power in always-on storage devices. The industrial temperature grade ensures reliability in data centers. The device's 4Gb density provides ample cache for large storage arrays.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור NT5CC256M16DP-DI — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | NT5CC256M16DP-DIH | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|
| Package | VFBGA-96 | VFBGA-96 | VFBGA-96 | VFBGA-96 |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps/pin | 1600 Mbps/pin | 1600 Mbps/pin | 1600 Mbps/pin |
מבדילים עיקריים
- Low voltage operation (1.35V) reduces power consumption by ~15% compared to standard DDR3 (לעומתStandard DDR3 parts)
- Industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments (לעומתCommercial-grade alternatives)
- High data rate of 1600 Mbps/pin provides high bandwidth for demanding applications (לעומתSlower DDR3L parts (e.g., 1066 Mbps/pin))
הערות תכנון
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and address lines to reduce signal integrity issues. Follow the layout guidelines in the Nanya datasheet for the VFBGA-96 package.
The NT5CC256M16DP-DI operates at 1.35V, reducing power dissipation compared to 1.5V DDR3. However, in high-density systems, ensure adequate airflow or heatsinking. The industrial temperature grade allows operation up to +95°C, but keep junction temperature below the maximum rating.
Use on-die termination (ODT) settings to match the bus impedance and reduce reflections. Set the ODT value according to the system's memory controller configuration. Also, ensure the differential clock pair (CK/CK#) is routed with controlled impedance and matched lengths.
מידע על תאימות
RoHS compliant per Nanya datasheet. AEC-Q100 not applicable for DRAM.
