NT5CC256M16DP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
N.º da peça: NT5CC256M16DP-DI ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3.400,00 |
| 1.000 | $6.5 | $6.500,00 |
NT5CC256M16DP-DI Visão geral
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in servers, laptops, and industrial systems.
Key features include a 4Gb density, 16-bit data bus, 800MHz clock frequency (1600 Mbps/pin), and a low operating voltage of 1.35V. The device supports programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It also includes auto-refresh and self-refresh modes for power saving.
Technically, the NT5CC256M16DP-DI uses a CMOS process and is designed to comply with all key DDR3(L) DRAM features. It has a differential clock input (CK and CK#) and all control and address inputs are synchronized to the clock. The device supports DLL (Delay-Locked Loop) for precise timing and includes a mode register for configuration. The VFBGA-96 package provides a compact footprint with excellent thermal and electrical performance.
Typical applications include main memory in embedded systems, networking equipment, industrial PCs, and automotive infotainment. Its low voltage and high speed make it ideal for power-sensitive designs. The industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
Alternativas drop-in para NT5CC256M16DP-DI — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT5CC256M16DP-DI (mesmo formato e footprint) — diferindo em Package, Data Rate, Supply Voltage, Burst Length, Memory Size.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT5CC256M16DP-DIH
✅ Drop-In✓ Em estoque
$20 / unidade
Ver ficha técnica →NT5CC256M16DP-FLNA
✅ Drop-In✓ Em estoque
$20 / unidade
Ver ficha técnica →NT5CC256M16CP-DI
✅ Drop-In✓ Em estoque
$2.9 / unidade
Ver ficha técnica →MT41K256M16HA-125
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →K4B4G1646D-BYK00
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$7.5 / unidade
Ver ficha técnica →H5TC4G63AFR-PBA
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$3.9773 / unidade
Ver ficha técnica →NT5CC256M16DP-DI Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4Gb |
| Organização da memória | 256M x 16 |
| Tensão de alimentação | 1.35V |
| Taxa de dados | 1600 Mbps/pin (800MHz) |
| Encapsulamento | VFBGA-96 |
| Faixa de temperatura de operação | -40°C to +95°C (industrial) |
| Latência CAS | 11, 12, 13 (programmable) |
| Burst Length | 8, 4 (with burst chop) |
| Number of Banks | 8 |
| Interface | Differential clock (CK, CK#) |
| Refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes (ODT) |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuração de pinos do NT5CC256M16DP-DI
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ2 — Data input/output 2 |
| Pino B3 | DQ3 — Data input/output 3 |
| Pino C1 | VDDQ — I/O power supply |
| Pino C2 | DQ4 — Data input/output 4 |
| Pino C3 | DQ5 — Data input/output 5 |
| Pino D1 | VSSQ — I/O ground |
| Pino D2 | DQ6 — Data input/output 6 |
| Pino D3 | DQ7 — Data input/output 7 |
| Pino E1 | CK — Clock input (positive) |
| Pino E2 | CK# — Clock input (negative) |
| Pino E3 | CKE — Clock enable |
| Pino F1 | CS# — Chip select |
| Pino F2 | RAS# — Row address strobe |
| Pino F3 | CAS# — Column address strobe |
| Pino G1 | WE# — Write enable |
| Pino G2 | A0 — Address input 0 |
| Pino G3 | A1 — Address input 1 |
Aplicações típicas
NT5CC256M16DP-DI é adequado para 6 aplicaçãos: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Data Storage Systems.
Embedded Computing
The NT5CC256M16DP-DI provides high-density, low-power memory for embedded processors and SoCs. Its 4Gb density and 16-bit interface are ideal for systems requiring moderate memory capacity with low power consumption. The 1.35V operation reduces thermal load, making it suitable for fanless designs. With a data rate of 1600 Mbps/pin, it supports fast data processing for industrial PCs and IoT gateways. The industrial temperature grade ensures reliable operation in harsh environments.
Recomendado
Networking Equipment
In networking switches and routers, the NT5CC256M16DP-DI offers high bandwidth and low latency for packet buffering and forwarding tables. Its 1600 Mbps/pin data rate supports high-throughput data paths, while the 1.35V supply minimizes power in 24/7 operation. The VFBGA-96 package saves board space, allowing dense line-card designs. The device's on-die termination improves signal integrity in high-speed traces, reducing the need for external components.
Recomendado
Industrial Automation
The NT5CC256M16DP-DI is well-suited for industrial controllers and PLCs that require reliable memory in extreme temperatures. Its industrial temperature range (-40°C to +95°C) ensures operation in factory floors and outdoor installations. The low 1.35V voltage reduces power dissipation, which is critical in sealed enclosures. With 4Gb density, it can store large control programs and data logs. The device's high-speed interface supports real-time data processing for motion control and robotics.
Recomendado
Automotive Infotainment
For automotive infotainment systems, the NT5CC256M16DP-DI provides the memory bandwidth needed for navigation, multimedia, and instrument clusters. Its automotive temperature grade ensures reliability in vehicle environments. The 1.35V operation reduces power consumption, extending battery life in electric vehicles. The compact VFBGA-96 package fits into space-constrained head units. The device's high data rate supports smooth video playback and responsive user interfaces.
Recomendado
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the NT5CC256M16DP-DI offers a cost-effective memory solution with low power consumption. Its 4Gb density is sufficient for streaming and app storage. The 1.35V supply is compatible with battery-powered devices, extending usage time. The device's high speed enables smooth 4K video playback. The VFBGA-96 package is ideal for slim designs.
Recomendado
Data Storage Systems
The NT5CC256M16DP-DI is used in SSDs and network-attached storage (NAS) as cache memory. Its high bandwidth and low latency improve data access speeds. The 1.35V operation reduces power in always-on storage devices. The industrial temperature grade ensures reliability in data centers. The device's 4Gb density provides ample cache for large storage arrays.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT5CC256M16DP-DI — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT5CC256M16DP-DIH | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|
| Package | VFBGA-96 | VFBGA-96 | VFBGA-96 | VFBGA-96 |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps/pin | 1600 Mbps/pin | 1600 Mbps/pin | 1600 Mbps/pin |
Principais diferenciais
- Low voltage operation (1.35V) reduces power consumption by ~15% compared to standard DDR3 (vs Standard DDR3 parts)
- Industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments (vs Commercial-grade alternatives)
- High data rate of 1600 Mbps/pin provides high bandwidth for demanding applications (vs Slower DDR3L parts (e.g., 1066 Mbps/pin))
Notas de projeto
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and address lines to reduce signal integrity issues. Follow the layout guidelines in the Nanya datasheet for the VFBGA-96 package.
The NT5CC256M16DP-DI operates at 1.35V, reducing power dissipation compared to 1.5V DDR3. However, in high-density systems, ensure adequate airflow or heatsinking. The industrial temperature grade allows operation up to +95°C, but keep junction temperature below the maximum rating.
Use on-die termination (ODT) settings to match the bus impedance and reduce reflections. Set the ODT value according to the system's memory controller configuration. Also, ensure the differential clock pair (CK/CK#) is routed with controlled impedance and matched lengths.
Informações de conformidade
RoHS compliant per Nanya datasheet. AEC-Q100 not applicable for DRAM.
