NT5CC256M16DP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
N.º de pieza: NT5CC256M16DP-DI ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3.400,00 |
| 1.000 | $6.5 | $6.500,00 |
NT5CC256M16DP-DI Descripción general
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in servers, laptops, and industrial systems.
Key features include a 4Gb density, 16-bit data bus, 800MHz clock frequency (1600 Mbps/pin), and a low operating voltage of 1.35V. The device supports programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It also includes auto-refresh and self-refresh modes for power saving.
Technically, the NT5CC256M16DP-DI uses a CMOS process and is designed to comply with all key DDR3(L) DRAM features. It has a differential clock input (CK and CK#) and all control and address inputs are synchronized to the clock. The device supports DLL (Delay-Locked Loop) for precise timing and includes a mode register for configuration. The VFBGA-96 package provides a compact footprint with excellent thermal and electrical performance.
Typical applications include main memory in embedded systems, networking equipment, industrial PCs, and automotive infotainment. Its low voltage and high speed make it ideal for power-sensitive designs. The industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
Alternativas directas para NT5CC256M16DP-DI — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con NT5CC256M16DP-DI (mismo factor de forma y huella) — difiere en Package, Data Rate, Supply Voltage, Burst Length, Memory Size.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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Ver hoja de datos →NT5CC256M16DP-DI Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Density | 4Gb |
| Organización de memoria | 256M x 16 |
| Tensión de alimentación | 1.35V |
| Velocidad de datos | 1600 Mbps/pin (800MHz) |
| Encapsulado | VFBGA-96 |
| Rango de temperatura de funcionamiento | -40°C to +95°C (industrial) |
| Latencia CAS | 11, 12, 13 (programmable) |
| Burst Length | 8, 4 (with burst chop) |
| Number of Banks | 8 |
| Interfaz | Differential clock (CK, CK#) |
| Refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes (ODT) |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de NT5CC256M16DP-DI
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — I/O ground |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
| Pin E1 | CK — Clock input (positive) |
| Pin E2 | CK# — Clock input (negative) |
| Pin E3 | CKE — Clock enable |
| Pin F1 | CS# — Chip select |
| Pin F2 | RAS# — Row address strobe |
| Pin F3 | CAS# — Column address strobe |
| Pin G1 | WE# — Write enable |
| Pin G2 | A0 — Address input 0 |
| Pin G3 | A1 — Address input 1 |
Aplicaciones típicas
NT5CC256M16DP-DI es adecuado para 6 aplicacións: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Consumer Electronics, Data Storage Systems.
Embedded Computing
The NT5CC256M16DP-DI provides high-density, low-power memory for embedded processors and SoCs. Its 4Gb density and 16-bit interface are ideal for systems requiring moderate memory capacity with low power consumption. The 1.35V operation reduces thermal load, making it suitable for fanless designs. With a data rate of 1600 Mbps/pin, it supports fast data processing for industrial PCs and IoT gateways. The industrial temperature grade ensures reliable operation in harsh environments.
Recomendado
Networking Equipment
In networking switches and routers, the NT5CC256M16DP-DI offers high bandwidth and low latency for packet buffering and forwarding tables. Its 1600 Mbps/pin data rate supports high-throughput data paths, while the 1.35V supply minimizes power in 24/7 operation. The VFBGA-96 package saves board space, allowing dense line-card designs. The device's on-die termination improves signal integrity in high-speed traces, reducing the need for external components.
Recomendado
Industrial Automation
The NT5CC256M16DP-DI is well-suited for industrial controllers and PLCs that require reliable memory in extreme temperatures. Its industrial temperature range (-40°C to +95°C) ensures operation in factory floors and outdoor installations. The low 1.35V voltage reduces power dissipation, which is critical in sealed enclosures. With 4Gb density, it can store large control programs and data logs. The device's high-speed interface supports real-time data processing for motion control and robotics.
Recomendado
Automotive Infotainment
For automotive infotainment systems, the NT5CC256M16DP-DI provides the memory bandwidth needed for navigation, multimedia, and instrument clusters. Its automotive temperature grade ensures reliability in vehicle environments. The 1.35V operation reduces power consumption, extending battery life in electric vehicles. The compact VFBGA-96 package fits into space-constrained head units. The device's high data rate supports smooth video playback and responsive user interfaces.
Recomendado
Consumer Electronics
In consumer devices like smart TVs and set-top boxes, the NT5CC256M16DP-DI offers a cost-effective memory solution with low power consumption. Its 4Gb density is sufficient for streaming and app storage. The 1.35V supply is compatible with battery-powered devices, extending usage time. The device's high speed enables smooth 4K video playback. The VFBGA-96 package is ideal for slim designs.
Recomendado
Data Storage Systems
The NT5CC256M16DP-DI is used in SSDs and network-attached storage (NAS) as cache memory. Its high bandwidth and low latency improve data access speeds. The 1.35V operation reduces power in always-on storage devices. The industrial temperature grade ensures reliability in data centers. The device's 4Gb density provides ample cache for large storage arrays.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para NT5CC256M16DP-DI — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | NT5CC256M16DP-DIH | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|
| Package | VFBGA-96 | VFBGA-96 | VFBGA-96 | VFBGA-96 |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1600 Mbps/pin | 1600 Mbps/pin | 1600 Mbps/pin | 1600 Mbps/pin |
Diferenciadores clave
- Low voltage operation (1.35V) reduces power consumption by ~15% compared to standard DDR3 (frente a Standard DDR3 parts)
- Industrial temperature grade (-40°C to +95°C) ensures reliable operation in harsh environments (frente a Commercial-grade alternatives)
- High data rate of 1600 Mbps/pin provides high bandwidth for demanding applications (frente a Slower DDR3L parts (e.g., 1066 Mbps/pin))
Notas de diseño
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and address lines to reduce signal integrity issues. Follow the layout guidelines in the Nanya datasheet for the VFBGA-96 package.
The NT5CC256M16DP-DI operates at 1.35V, reducing power dissipation compared to 1.5V DDR3. However, in high-density systems, ensure adequate airflow or heatsinking. The industrial temperature grade allows operation up to +95°C, but keep junction temperature below the maximum rating.
Use on-die termination (ODT) settings to match the bus impedance and reduce reflections. Set the ODT value according to the system's memory controller configuration. Also, ensure the differential clock pair (CK/CK#) is routed with controlled impedance and matched lengths.
Información de cumplimiento
RoHS compliant per Nanya datasheet. AEC-Q100 not applicable for DRAM.
