AFT26HW050SR3 vs AFT26HW050GSR3 तुलना
विस्तृत दोनों ओर की तुलना AFT26HW050SR3 द्वारा NXP Semiconductors और AFT26HW050GSR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ सक्रियविशेषता तुलना
| पैरामीटर | AFT26HW050SR3 | AFT26HW050GSR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Part Family | Airfast AFT26HW050S Series | — |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Transistor Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Frequency Range | 2496 MHz to 2690 MHz | — |
| Output Power (Average) | 9 W (Average) | — |
| Output Power (Peak) | 50 W (Peak) | — |
| Power Gain (Typical) | 14.2 dB | — |
| Drain Voltage (Operating) | 28 V | — |
| Quiescent Current (Test) | 100 mA | — |
| पैकेज / केस | NI-780-4S4 (Ceramic Air-Cavity) | NI-780GS-4L4L (9-pin, ceramic) |
| टोपोलॉजी | Asymmetrical Doherty (Main + Peak) | — |
| Application Band | 2.6 GHz TDD-LTE / 5G NR | — |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free | Yes | — |
| माउंटिंग प्रकार | Surface Mount (SMD RF Flange) | Chassis Mount (bolt-down, flange) |
| Series | Airfast RF Power | — |
| Part Number | — | AFT26HW050GSR3 |
| Family | — | Airfast RF Power |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Maximum Drain-Source Voltage | — | 65 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Configuration | — | Single transistor, internally input-matched |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| Technology | — | LDMOS (Laterally Diffused MOS), Airfast gen |
| REACH Status | — | Compliant |
| ऑपरेटिंग तापमान | — | -40 C to +150 C |