AFT26HW050SR3 vs AFT26HW050GSR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma AFT26HW050SR3 tarafından NXP Semiconductors ve AFT26HW050GSR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ AktifÖzellik Karşılaştırması
| Parametre | AFT26HW050SR3 | AFT26HW050GSR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Part Family | Airfast AFT26HW050S Series | — |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Transistor Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Frequency Range | 2496 MHz to 2690 MHz | — |
| Output Power (Average) | 9 W (Average) | — |
| Output Power (Peak) | 50 W (Peak) | — |
| Power Gain (Typical) | 14.2 dB | — |
| Drain Voltage (Operating) | 28 V | — |
| Quiescent Current (Test) | 100 mA | — |
| Paket / Kas | NI-780-4S4 (Ceramic Air-Cavity) | NI-780GS-4L4L (9-pin, ceramic) |
| Ağ Yapısı | Asymmetrical Doherty (Main + Peak) | — |
| Application Band | 2.6 GHz TDD-LTE / 5G NR | — |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free | Yes | — |
| Montaj Türü | Surface Mount (SMD RF Flange) | Chassis Mount (bolt-down, flange) |
| Series | Airfast RF Power | — |
| Part Number | — | AFT26HW050GSR3 |
| Family | — | Airfast RF Power |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Maximum Drain-Source Voltage | — | 65 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Configuration | — | Single transistor, internally input-matched |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| Technology | — | LDMOS (Laterally Diffused MOS), Airfast gen |
| REACH Status | — | Compliant |
| İşletim Sıcaklığı | — | -40 C to +150 C |