AFT26HW050SR3 vs AFT26HW050GSR3 Perbandingan
Perbandingan bersamaan detil AFT26HW050SR3 dari NXP Semiconductors dan AFT26HW050GSR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
AFT26HW050GSR3 - 9W RF Power LDMOS 2.5-2.7GHz Doherty | NXP
AFT26HW050GSR3 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | AFT26HW050SR3 | AFT26HW050GSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors | NXP Semiconductors |
| Part Family | Airfast AFT26HW050S Series | — |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) | RF Power MOSFET (LDMOS), N-Channel, Enhancement Mode |
| Transistor Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Frequency Range | 2496 MHz to 2690 MHz | — |
| Output Power (Average) | 9 W (Average) | — |
| Output Power (Peak) | 50 W (Peak) | — |
| Power Gain (Typical) | 14.2 dB | — |
| Drain Voltage (Operating) | 28 V | — |
| Quiescent Current (Test) | 100 mA | — |
| Paket / Case | NI-780-4S4 (Ceramic Air-Cavity) | NI-780GS-4L4L (9-pin, ceramic) |
| Topologi | Asymmetrical Doherty (Main + Peak) | — |
| Application Band | 2.6 GHz TDD-LTE / 5G NR | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tipe Mounting | Surface Mount (SMD RF Flange) | Chassis Mount (bolt-down, flange) |
| Series | Airfast RF Power | — |
| Part Number | — | AFT26HW050GSR3 |
| Family | — | Airfast RF Power |
| Operating Frequency | — | 2496 MHz to 2690 MHz |
| Typical Drain-Source Voltage (Vds) | — | 28 V |
| Maximum Drain-Source Voltage | — | 65 V |
| Output Power (P1dB / Avg) | — | 9 W average (Doherty) |
| Power Gain (Gp) | — | 14.2 dB at 2.69 GHz |
| Test Condition Gain | — | 14.2 dB @ 2.69 GHz |
| Test Condition Frequency | — | 2.496 GHz to 2.69 GHz |
| Quiescent Current (Iq) | — | 100 mA |
| Configuration | — | Single transistor, internally input-matched |
| Architecture | — | Asymmetric Doherty (paired carrier/peaking) |
| Technology | — | LDMOS (Laterally Diffused MOS), Airfast gen |
| REACH Status | — | Compliant |
| Suhu Kerja | — | -40 C to +150 C |