BSC020N03LSGATMA1 vs BSC011N03LSATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSC020N03LSGATMA1 द्वारा Infineon और BSC011N03LSATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | BSC020N03LSGATMA1 | BSC011N03LSATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | 100 A (TC) |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | 1.0 V to 2.2 V (typ 1.6 V) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | 1.1 mOhm (typ) |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| ऑपरेटिंग तापमान रेंज | -55 C to +150 C (junction) | -55C to +150C |
| पैकेज / केस | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| RoHS स्थिति | Compliant | Compliant |
| MSL स्तर | 1 (per JEDEC J-STD-020, per Infineon datasheet) | 1 |
| Product Series | — | OptiMOS 30V |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| पैकेज | — | PG-TDSON-8-1 (SuperSO8) |