BSC020N03LSGATMA1 vs BSC011N03LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC020N03LSGATMA1 disebabkan oleh Infineon dan BSC011N03LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC020N03LSGATMA1 BSC011N03LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] 100 A (TC)
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) 1.0 V to 2.2 V (typ 1.6 V)
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm 1.1 mOhm (typ)
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +150C
Kemasan / Case PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020, per Infineon datasheet) 1
Product Series — OptiMOS 30V
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TA=25C — 37 A
Gate-Source Voltage (VGS) max — +/-20 V
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (PD) at TC=25C — 96 W
Power Dissipation (PD) at TA=25C — 2.5 W
Kemasan — PG-TDSON-8-1 (SuperSO8)

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