BSC020N03LSGATMA1 vs BSC011N03LSATMA1 Perbandingan

Perbandingan bersamaan detil BSC020N03LSGATMA1 dari Infineon dan BSC011N03LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC020N03LSGATMA1 BSC011N03LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] 100 A (TC)
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) 1.0 V to 2.2 V (typ 1.6 V)
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm 1.1 mOhm (typ)
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C
Paket / Case PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020, per Infineon datasheet) 1
Product Series — OptiMOS 30V
Polarity — N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TA=25C — 37 A
Gate-Source Voltage (VGS) max — +/-20 V
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (PD) at TC=25C — 96 W
Power Dissipation (PD) at TA=25C — 2.5 W
Paket — PG-TDSON-8-1 (SuperSO8)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon