BSC098N10NS5ATMA1 vs IPLU300N04S41R1XTMA1 तुलना
विस्तृत दोनों ओर की तुलना BSC098N10NS5ATMA1 द्वारा Infineon और IPLU300N04S41R1XTMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ सक्रियInfineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | BSC098N10NS5ATMA1 | IPLU300N04S41R1XTMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: Tj min/max] | — |
| पैकेज | PG-TDSON-8-7 (SuperSO8 5x6) | PG-HSOF-8-1 (8-PowerSFN, surface mount) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| RoHS स्थिति | Compliant | — |
| MSL स्तर | 1 | — |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPLU300N04S41R1XTMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 A |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 W |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | — | 1.15 mΩ |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | — | 151 nC |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | — | 12,090 pF |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| ऑपरेटिंग जंक्शन तापमान | — | 175 °C |
| Peak Reflow Temperature (AEC-Q) | — | 260 °C |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS Compliance | — | Yes (Green Product) |
| Lead-Free | — | Yes (100% lead-free) |
| Configuration | — | Single with built-in diode |
| Packing | — | Tape & Reel (TR) |