BSC098N10NS5ATMA1 vs IPLU300N04S41R1XTMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC098N10NS5ATMA1 disebabkan oleh Infineon dan IPLU300N04S41R1XTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ AktifInfineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC098N10NS5ATMA1 | IPLU300N04S41R1XTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj min/max] | — |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6) | PG-HSOF-8-1 (8-PowerSFN, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Aras MSL | 1 | — |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPLU300N04S41R1XTMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 A |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 W |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | — | 1.15 mΩ |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | — | 151 nC |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | — | 12,090 pF |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| Suhu Hubungan Operasi | — | 175 °C |
| Peak Reflow Temperature (AEC-Q) | — | 260 °C |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS Compliance | — | Yes (Green Product) |
| Lead-Free | — | Yes (100% lead-free) |
| Configuration | — | Single with built-in diode |
| Packing | — | Tape & Reel (TR) |