CGD65A130SH2 vs CGD65A130S2 तुलना
विस्तृत दोनों ओर की तुलना CGD65A130SH2 द्वारा Cambridge GaN Devices और CGD65A130S2 द्वारा Cambridge GaN Devices. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Cambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ सक्रियCambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ सक्रियविशेषता तुलना
| पैरामीटर | CGD65A130SH2 | CGD65A130S2 |
|---|---|---|
| ब्रांड | Cambridge GaN Devices | Cambridge GaN Devices |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| ट्रांज़िस्टर प्रकार | GaN HEMT, N-Channel, Enhancement Mode | — |
| Technology | GaN-on-Si with ICeGaN® gate | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| On-Resistance (RDS(on)) | 55 mΩ (typical) | — |
| पैकेज | 16-DFN (8x8 mm) with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Gate Threshold | ICeGaN® 5 V compatible gate-threshold window | — |
| Current Sense Pin | Integrated CS output (digital/analog ratio) with NL³ circuit | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN intrinsic; datasheet figure) | 0 nC (GaN - negligible) |
| Switching Frequency Suitability | Up to several MHz (typical GaN-HEMT range) | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: full -40C to +150C TJ range] | — |
| MSL स्तर | MSL3 (typical for 16-DFN GaN packages) | [DATA_NEEDED: MSL rating] |
| RoHS स्थिति | Compliant | Compliant |
| हैलोजन फ्री | Yes | — |
| Manufacturer | — | Cambridge GaN Devices |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss value at VDS=400V] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| ऑपरेटिंग जंक्शन तापमान | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |