CGD65A130SH2 vs CGD65A130S2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma CGD65A130SH2 tarafından Cambridge GaN Devices ve CGD65A130S2 tarafından Cambridge GaN DevicesAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Cambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ AktifÖzellik Karşılaştırması
| Parametre | CGD65A130SH2 | CGD65A130S2 |
|---|---|---|
| Marka | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | GaN HEMT, N-Channel, Enhancement Mode | — |
| Technology | GaN-on-Si with ICeGaN® gate | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| On-Resistance (RDS(on)) | 55 mΩ (typical) | — |
| Paket | 16-DFN (8x8 mm) with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| Montaj Türü | Surface Mount | Surface Mount |
| Gate Threshold | ICeGaN® 5 V compatible gate-threshold window | — |
| Current Sense Pin | Integrated CS output (digital/analog ratio) with NL³ circuit | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN intrinsic; datasheet figure) | 0 nC (GaN - negligible) |
| Switching Frequency Suitability | Up to several MHz (typical GaN-HEMT range) | — |
| İşletim Sıcaklığı | [DATA_NEEDED: full -40C to +150C TJ range] | — |
| MSL Seviyesi | MSL3 (typical for 16-DFN GaN packages) | [DATA_NEEDED: MSL rating] |
| RoHS Durumu | Compliant | Compliant |
| Klorürsüz | Yes | — |
| Manufacturer | — | Cambridge GaN Devices |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss value at VDS=400V] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| İşletim Jant Sıcaklığı | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |