CGD65A130SH2 vs CGD65A130S2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci CGD65A130SH2 disebabkan oleh Cambridge GaN Devices dan CGD65A130S2 disebabkan oleh Cambridge GaN Devices. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Cambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ AktifPengandingan Spesifikasi
| Parametr | CGD65A130SH2 | CGD65A130S2 |
|---|---|---|
| Merek | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | GaN HEMT, N-Channel, Enhancement Mode | — |
| Technology | GaN-on-Si with ICeGaN® gate | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| On-Resistance (RDS(on)) | 55 mΩ (typical) | — |
| Kemasan | 16-DFN (8x8 mm) with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gate Threshold | ICeGaN® 5 V compatible gate-threshold window | — |
| Current Sense Pin | Integrated CS output (digital/analog ratio) with NL³ circuit | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN intrinsic; datasheet figure) | 0 nC (GaN - negligible) |
| Switching Frequency Suitability | Up to several MHz (typical GaN-HEMT range) | — |
| Suhu Operasi | [DATA_NEEDED: full -40C to +150C TJ range] | — |
| Aras MSL | MSL3 (typical for 16-DFN GaN packages) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Manufacturer | — | Cambridge GaN Devices |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss value at VDS=400V] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| Suhu Hubungan Operasi | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |