CGD65A130SH2 vs CGD65A130S2 比較
詳細並排比較 CGD65A130SH2 由 Cambridge GaN Devices 與 CGD65A130S2 由 Cambridge GaN Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Cambridge GaN Devices
CGD65A130SH2 - 650V GaN HEMT 12A 55mΩ ICeGaN | Cambridge GaN Devices
CGD65A130SH2 ✓ 啟用中規格比較
| 參數 | CGD65A130SH2 | CGD65A130S2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | GaN HEMT, N-Channel, Enhancement Mode | — |
| Technology | GaN-on-Si with ICeGaN® gate | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID) | 12 A | [DATA_NEEDED: continuous ID at 25°C and 100°C] |
| On-Resistance (RDS(on)) | 55 mΩ (typical) | — |
| 封裝 | 16-DFN (8x8 mm) with exposed thermal pad | DFN-16 (8 × 8 mm) with exposed pad |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Threshold | ICeGaN® 5 V compatible gate-threshold window | — |
| Current Sense Pin | Integrated CS output (digital/analog ratio) with NL³ circuit | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN intrinsic; datasheet figure) | 0 nC (GaN - negligible) |
| Switching Frequency Suitability | Up to several MHz (typical GaN-HEMT range) | — |
| 工作溫度 | [DATA_NEEDED: full -40C to +150C TJ range] | — |
| MSL 等級 | MSL3 (typical for 16-DFN GaN packages) | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | — |
| Manufacturer | — | Cambridge GaN Devices |
| Drain-Source Voltage (VDS, max) | — | 650 V |
| On-State Resistance (RDS(on)) | — | 130 mΩ (typ) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Gate Charge (Qg, total) | — | [DATA_NEEDED: Qg typical value] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss value at VDS=400V] |
| Gate-Source Voltage Rating | — | ±20 V (ICeGaN robust gate; see datasheet) |
| 工作接面溫度 | — | -40°C to +150°C |
| Integrated Features | — | Current sense, Miller clamp (NL³), ICeGaN gate |