CGD65B130SH2 vs CGD65B130S2 तुलना
विस्तृत दोनों ओर की तुलना CGD65B130SH2 द्वारा Cambridge GaN Devices और CGD65B130S2 द्वारा Cambridge GaN Devices. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Cambridge GaN Devices
CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN
CGD65B130SH2 ✓ सक्रियCambridge GaN Devices
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65B130S2 ✓ सक्रियविशेषता तुलना
| पैरामीटर | CGD65B130SH2 | CGD65B130S2 |
|---|---|---|
| ब्रांड | Cambridge GaN Devices | Cambridge GaN Devices |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Part Number | CGD65B130SH2 | — |
| ट्रांज़िस्टर प्रकार | N-Channel GaN HEMT (Enhancement Mode) | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| Continuous Drain Current (ID) at 25°C | 12 A | — |
| On-Resistance RDS(on) (typical, per product page) | 55 mΩ | — |
| On-Resistance RDS(on) (max at 900 mA / 12 V) | 182 mΩ | — |
| On-Resistance Range (datasheet) | 130 to 350 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2.2 V to 4.2 V | — |
| Total Gate Charge Qg | 1.9 nC | — |
| Technology | GaN-on-silicon (ICeGaN®) | — |
| Integrated Features | ICeGaN® gate, Current Sense, NL³ protection circuit | — |
| पैकेज | 8-DFN (5x6 mm), Surface Mount | 8-DFN 5x6 mm with exposed thermal pad |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Operating Mode | Enhancement-mode (normally-off) | — |
| Compliance / RoHS | Compliant (per DigiKey listing) | — |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Continuous Drain Current (ID) | — | 12 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero) |
| ऑपरेटिंग तापमान | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| MSL स्तर | — | MSL 1 (per JEDEC J-STD-020) |
| RoHS स्थिति | — | Compliant |
| Substrate Technology | — | GaN-on-silicon |