CGD65B130SH2 vs CGD65B130S2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci CGD65B130SH2 disebabkan oleh Cambridge GaN Devices dan CGD65B130S2 disebabkan oleh Cambridge GaN Devices. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | CGD65B130SH2 | CGD65B130S2 |
|---|---|---|
| Merek | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Part Number | CGD65B130SH2 | — |
| Jenis Transistor | N-Channel GaN HEMT (Enhancement Mode) | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| Continuous Drain Current (ID) at 25°C | 12 A | — |
| On-Resistance RDS(on) (typical, per product page) | 55 mΩ | — |
| On-Resistance RDS(on) (max at 900 mA / 12 V) | 182 mΩ | — |
| On-Resistance Range (datasheet) | 130 to 350 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2.2 V to 4.2 V | — |
| Total Gate Charge Qg | 1.9 nC | — |
| Technology | GaN-on-silicon (ICeGaN®) | — |
| Integrated Features | ICeGaN® gate, Current Sense, NL³ protection circuit | — |
| Kemasan | 8-DFN (5x6 mm), Surface Mount | 8-DFN 5x6 mm with exposed thermal pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Operating Mode | Enhancement-mode (normally-off) | — |
| Compliance / RoHS | Compliant (per DigiKey listing) | — |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Continuous Drain Current (ID) | — | 12 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero) |
| Suhu Operasi | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| Aras MSL | — | MSL 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Substrate Technology | — | GaN-on-silicon |