IGB50N60T vs IGB50N60TATMA1 तुलना
विस्तृत दोनों ओर की तुलना IGB50N60T द्वारा Infineon और IGB50N60TATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IGB50N60T | IGB50N60TATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | IGBTs | IGBTs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous DC Collector Current (IC, TC=100°C) | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | 150 A |
| Total Power Dissipation (Ptot, TC=25°C) | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | 5.0 V (typical), 4.5 V min / 6.5 V max | — |
| Gate-Emitter Voltage Maximum (VGES) | ±20 V | — |
| Collector-Emitter Saturation Voltage (VCE(sat), IC=50 A, VGE=15 V) | [DATA_NEEDED: VCE(sat) exact value] | — |
| Zero-Temperature-Coefficient Point (IC at VCE(sat) nominal) | [DATA_NEEDED: IC nominal] | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon value] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff value] | — |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | 1.7 mJ (typical) | — |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | 10 µs (typical) | — |
| ऑपरेटिंग जंक्शन तापमान रेंज | -40 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| पैकेज | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) | PG-TO263-3-2 (D2PAK / TO-263) |
| माउंटिंग प्रकार | Surface Mount (D2Pak tab acts as drain/collector) | Surface Mount |
| Technology Family | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode | — |
| RoHS स्थिति | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Technology | — | Trench + Field-Stop |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| कलेक्टर-एमिटर सैचुरेशन वोल्टेज (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| ऑपरेटिंग जंक्शन तापमान | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| MSL स्तर | — | 1 |
| Configuration | — | Single |