IGB50N60T vs IGB50N60TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IGB50N60T sa pamamagitan ng Infineon at IGB50N60TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IGB50N60T | IGB50N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | IGBTs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous DC Collector Current (IC, TC=100°C) | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | 150 A |
| Total Power Dissipation (Ptot, TC=25°C) | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | 5.0 V (typical), 4.5 V min / 6.5 V max | — |
| Gate-Emitter Voltage Maximum (VGES) | ±20 V | — |
| Collector-Emitter Saturation Voltage (VCE(sat), IC=50 A, VGE=15 V) | [DATA_NEEDED: VCE(sat) exact value] | — |
| Zero-Temperature-Coefficient Point (IC at VCE(sat) nominal) | [DATA_NEEDED: IC nominal] | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon value] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff value] | — |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | 1.7 mJ (typical) | — |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | 10 µs (typical) | — |
| Hanay ng Temperature ng Junction na Operasyon | -40 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Packhaging | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) | PG-TO263-3-2 (D2PAK / TO-263) |
| Uri ng Pagpapasok | Surface Mount (D2Pak tab acts as drain/collector) | Surface Mount |
| Technology Family | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Technology | — | Trench + Field-Stop |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| Temperature ng Junction na Operasyon | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| Level ng MSL | — | 1 |
| Configuration | — | Single |