IGB50N60T vs IGB50N60TATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IGB50N60T tarafından Infineon ve IGB50N60TATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IGB50N60T | IGB50N60TATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | IGBTs | IGBTs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous DC Collector Current (IC, TC=100°C) | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | 150 A |
| Total Power Dissipation (Ptot, TC=25°C) | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | 5.0 V (typical), 4.5 V min / 6.5 V max | — |
| Gate-Emitter Voltage Maximum (VGES) | ±20 V | — |
| Collector-Emitter Saturation Voltage (VCE(sat), IC=50 A, VGE=15 V) | [DATA_NEEDED: VCE(sat) exact value] | — |
| Zero-Temperature-Coefficient Point (IC at VCE(sat) nominal) | [DATA_NEEDED: IC nominal] | — |
| Turn-on Switching Energy (Eon) | [DATA_NEEDED: Eon value] | — |
| Turn-off Switching Energy (Eoff) | [DATA_NEEDED: Eoff value] | — |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | 1.7 mJ (typical) | — |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | 10 µs (typical) | — |
| İşletim Jant Sıcaklığı Aralığı | -40 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Paket | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) | PG-TO263-3-2 (D2PAK / TO-263) |
| Montaj Türü | Surface Mount (D2Pak tab acts as drain/collector) | Surface Mount |
| Technology Family | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode | — |
| RoHS Durumu | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | Trenchstop IGBT3 |
| Technology | — | Trench + Field-Stop |
| Continuous Collector Current (IC) at TC=25°C | — | 100 A |
| Continuous Collector Current (IC) at TC=100°C | — | 50 A |
| Total Power Dissipation (Ptot) at TC=25°C | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 5.0 V (typ), 6.5 V (max) |
| Toplayıcı-Emisör Doldurma电压 (Vce(sat)) | — | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) |
| Short-Circuit Withstand Time (tsc) | — | 5 µs min at VCE=360V, TJ≤150°C |
| İşletim Jant Sıcaklığı | — | -40 °C to +150 °C |
| Co-packaged Diode | — | Anti-parallel EmCon3 diode |
| MSL Seviyesi | — | 1 |
| Configuration | — | Single |