IRF1010ZSTRLPBF vs IRF1010ESTRLPBF तुलना
विस्तृत दोनों ओर की तुलना IRF1010ZSTRLPBF द्वारा Infineon और IRF1010ESTRLPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRF1010ZSTRLPBF | IRF1010ESTRLPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 55 V | — |
| Continuous Drain Current (Id) | 75 A at Tc | — |
| Continuous Drain Current (Id, distributor listing) | 94 A | — |
| Drain-Source On-Resistance (RDS(on)) | 7.5 mOhm | — |
| RDS(on) (alternate condition) | 14.0 mOhm | — |
| Total Gate Charge (Qg) | 63 nC | 86.6 nC |
| Power Dissipation (Pd) | 140 W at Tc | — |
| Junction Operating Temperature | 175 C (max) | — |
| पैकेज | D2PAK (TO-263), Surface Mount | D2PAK (TO-263) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Technology | HEXFET Advanced Process Technology | HEXFET planar |
| Avalanche Rating | Improved repetitive avalanche rating | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: gate-source voltage] | — |
| RoHS स्थिति | RoHS3 Compliant (PBF lead-free suffix) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ Tc | — | 84 A |
| Power Dissipation (Pd) @ Tc | — | 200 W |
| On-Resistance (RDS on) @ VGS=10V | — | 12 mOhm |
| Drive Voltage | — | 10 V (standard level) |
| Qualification | — | JEDEC standard qualified |
| Structure | — | Planar cell (wide SOA) |
| Avalanche Testing | — | 100% avalanche energy tested |
| Sourcing | — | Multi-vendor, broad distribution availability |
| Pb-Free / RoHS | — | PBF (Pb-free) suffix |